Inphi Corporation

Agency for Science, Technology and Research

Marvell Asia Pte., Ltd.

Fujikura Limited

Xiaoguang Tu

Masaki Kato

Radhakrishnan L Nagarajan

Guo-Qiang Patrick Lo

Mingbin Yu

Tsung-Yang Liow

Jie Lin

Xianshu Luo

Kensuke Ogawa

Kazuhiro Goi

Patrick Guo-Qiang Lo

Junfeng Song

Guo Qiang Patrick Lo

Yu Li

Qing Fang

Wanjun Wang

Jun-Feng Song

A silicon photonics modulator includes a substrate, a PN junction disposed on the substrate, the PN junction formed by a first L-shaped region doped with a p-type doping abutting a second L-shaped region doped with an n-type doping, a first plurality of regions each having different p-type doping concentrations greater than the first L-shaped region, and a second plurality of regions each having different n-type doping concentrations greater than the second L-shaped region. The silicon photonics modulator includes a first electrical contact on one of the first plurality of regions, a second electrical contact on one of the second plurality of regions, and multiple grating pillars doped with the n-type doping or the p-type doping, each of the multiple grating pillars spaced apart from the PN junction and spaced apart from one another.

Optics ring modulator including grating pillar

A silicon optical modulator includes a silicon-on-insulator substrate and a first waveguide and a second waveguide arranged parallel to each other in the silicon-on-insulator substrate. The first waveguide includes a first PN junction. The second waveguide includes a second PN junction. At least one of the first PN junction and the second PN junction is disposed at an interface between a P type doped region and a N type doped region. The interface has an irregular shape that is not perpendicular to a plane in which the silicon-on-insulator substrate lies.

Silicon optical modulator, method for making the same

A silicon optical modulator is fabricated to have a multi-slab structure between the contacts and the waveguide, imparting desirable performance attributes. A first slab comprises dopant of a first level. A second slab adjacent to (e.g., on top of) the first slab, comprises a doped region proximate to a contact, and an intrinsic region proximate to the waveguide. The parallel resistance properties and low overlap between the highly doped silicon and optical mode pigtail afforded by the multi-slab configuration, allow the modulator to operate with reduced optical losses and at a high speed. Embodiments may be implemented in a Mach-Zehnder interferometer or in micro-ring resonator modulator configuration.

Dual-slab-layer low-loss silicon optical modulator

A silicon photonics integration circuit includes a silicon substrate member; a RX sub-circuit formed in the silicon substrate member including multiple RX-input ports each having a mode size converter configured to receive an incoming light signal into one of multiple waveguides and multiple RX photo detectors coupled respectively to the multiple waveguides; and a TX sub-circuit formed in the silicon substrate member including one or more TX-input ports each having a mode size converter coupled to a first TX photo detector into one input waveguide, one or more 1&#xd7;2 directional couplers each coupled between the input waveguide and two mod-input waveguides, multiple modulators coupled between respective multiple mod-input waveguides and multiple mod-output waveguides each being coupled to a second TX photo detector into one of multiple output waveguides, and multiple TX-output ports each having a mode size converter coupled to respective one of the multiple output waveguides.

Silicon photonics integration circuit

A silicon optical modulator includes two silicon waveguide branches coupled between a 2&#xd7;2 splitter at a common input end and a 2&#xd7;2 splitter at a common output end. The modulator further includes at least one of the two silicon waveguide branches comprising a ridge-shape having a central portion of a height sandwiched in a width direction by a first side portion and a second side portion throughout a length of the waveguide. The central portion in each cross-section plane thereof includes a p-region and a n-region separated by a continuous borderline to form an irregular shaped PN junction. The borderline is configured to have at least one section-line with a sloped angle relative to the width direction and have a total border-length substantially longer than the height. The p-region is in contact with the first side portion and the n-region is in contact with the second side portion.

An optical dispersion compensator integrated with a silicon photonics system including a first phase-shifter coupled to a second phase-shifter in parallel on the silicon substrate characterized in an athermal condition. The dispersion compensator further includes a third phase-shifter on the silicon substrate to the first phase-shifter and the second phase-shifter through two 2&#xd7;2 splitters to form an optical loop. A second entry port of a first 2&#xd7;2 splitter is for coupling with an input fiber and a second exit port of a second 2&#xd7;2 splitter is for coupling with an output fiber. The optical loop is characterized by a total phase delay tunable via each of the first phase-shifter, the second phase-shifter, and the third phase-shifter such that a normal dispersion (&#x3e;0) at a certain wavelength in the input fiber is substantially compensated and independent of temperature.

Optical dispersion compensator on silicon

An optical waveguide device includes a substrate; a lower cladding disposed on the substrate; a rib waveguide including a slab disposed on the lower cladding and a single rib disposed on the slab contiguous to the slab; and an upper cladding disposed on the rib waveguide. The rib waveguide includes a first doped region having a first electric conductivity exhibiting a P-type electric conductivity across the rib and the slab and a second doped region being contiguous to the first doped region and having a second electric conductivity exhibiting an N-type electric conductivity across the rib and the slab.

Optical waveguide device and method of manufacturing the same

An optical sensing system may include a light separation element configured to separate an input light into a plurality of sliced lights and a first resonator configured to receive one sliced light of the plurality of sliced lights. An effective refractive index of the first resonator may be changeable in response to a change in a refractive index of a cladding of the first resonator, a second resonator coupled to the first resonator and a detector configured to measure an intensity of the sliced light, the intensity of the sliced light based on a difference between a resonant wavelength of the first resonator and a resonant wavelength of the second resonator. The difference between a resonant wavelength of the first resonator and a resonant wavelength of the second resonator may be based on the effective refractive index of the first resonator.

Optical sensing system and method of determining a change in a refractive index in an optical sensing system

An optical circuit for sensing a biological entity in a fluid and a method of configuring an optical circuit for sensing a biological entity in a fluid are provided. The optical circuit includes a sensing arrangement including a reference arm having a reference waveguide and a sensing arm having a waveguide; wherein lengths of the reference waveguide and the waveguide are configured in accordance with a temperature dependency reduction criterion.

Optical circuit for sensing a biological entity in a fluid and method of configuring the same

According to embodiments of the present invention, a method for forming an optical modulator is provided. The method includes providing a substrate, implanting dopants of a first conductivity type into the substrate to form a first doped region, implanting dopants of a second conductivity type into the substrate to form a second doped region, wherein a portion of the second doped region is formed over and overlaps with a portion of the first doped region to form a junction between the respective portions of the first doped region and the second doped region, and wherein a remaining portion of the second doped region is located outside of the junction, and forming a ridge waveguide, wherein the ridge waveguide overlaps with at least a part of the junction.

Method for forming an optical modulator

According to embodiments of the present invention, an optical modulator is provided. The optical modulator includes a depletion region comprising a junction between from a first conductivity type portion and a second conductivity type portion, a first intrinsic region, and a second intrinsic region, and wherein the depletion region is disposed between the first intrinsic region and the second intrinsic region.

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Singapore, Singapore

Xiaoguang Tu