3M Innovative Properties Company

Xiaoguang Sun

Michael Albert Haase

Thomas James Miller

Terry Lee Smith

Catherine A Leatherdale

Junqing Xie

Zai-Ming Qiu

Moses Mekala David

Robert L Brott

Zhaohui Yang

David G Freier

Manoj Nirmal

Tommie W Kelley

Justin P Meyer

Guoping Mao

Todd A Ballen

Bert T Chien

David J Rowe

Haeen Sykora

Hyacinth L Lechuga

Nicholas C Erickson

Samuel J Carpenter

Amy S Barnes

Michael W Bench

Hui Luo

Jilliann M Nelson

A nanostructured article having a first layer with a nanostructured surface is described. The nanostructured surface includes a plurality of pillars extending from a base surface of the first layer. The pillars have an average height greater than an average lateral dimension of the pillars. An average center-to-center spacing between pillars is no more than 2000 nm. The average lateral dimension is no less than 50 nm. Each pillar in the plurality of pillars has at least a lower portion and an upper portion where the lower portion is between the upper portion and the base surface, and the upper and lower portions have differing compositions. The nanostructured article includes a second layer disposed over the plurality of pillars and extending continuously to the base surface.

Nanostructured article

Light emitting systems are described. Particularly, light emitting systems and light converting components utilized within these systems are described. The light emitting system and components are formed such that dark-line defects do not interfere with the light emitting system efficiency.

Light converting and emitting device with suppressed dark-line defects

Re-emitting semiconductor constructions (RSCs) for use with LEDs, and related devices, systems, and methods are disclosed. A method of fabrication includes providing a semiconductor substrate, forming on a first side of the substrate a semiconductor layer stack, attaching a carrier window to the stack, and removing the substrate after the attaching step. The stack includes an active region adapted to convert light at a first wavelength &#x3bb;to visible light at a second wavelength &#x3bb;, the active region including at least a first potential well. The attaching step is carried out such that the stack is disposed between the substrate and the carrier window, which is transparent to the second wavelength &#x3bb;. The carrier window may also have a lateral dimension greater than that of the stack. The removal step is carried out so as to provide an RSC carrier device that includes the carrier window and the stack.

Re-emitting semiconductor carrier devices for use with LEDs and methods of manufacture

We have observed anomalous behavior of II-VI semiconductor devices grown on certain semiconductor substrates, and have determined that the anomalous behavior is likely the result of indium atoms from the substrate migrating into the II-V layers during growth. The indium can thus become an unintended dopant in one or more of the II-VI layers grown on the substrate, particularly layers that are close to the growth substrate, and can detrimentally impact device performance. We describe a variety of semiconductor constructions and techniques effective to deplete the migrating indium within a short distance in the growth layers, or to substantially prevent indium from migrating out of the substrate, or to otherwise substantially isolate functional II-VI layers from the migrating indium, so as to maintain good device performance.

Semiconductor devices grown on indium-containing substrates utilizing indium depletion mechanisms

Light emitting systems are disclosed. More particularly light emitting systems that utilize wavelength converting semiconductor layer stacks, and preferred amounts of potential well types in such stacks to achieve more optimal performance are disclosed.

Multicolored light converting LED with minimal absorption

Disclosed re-emitting semiconductor constructions (RSCs) may provide full-color RGB or white-light emitting devices that are free of cadmium. Some embodiments may include a potential well that comprises a III-V semiconductor and that converts light of a first photon energy to light of a smaller photon energy, and a window that comprises a II-VI semiconductor having a band gap energy greater than the first photon energy. Some embodiments may include a potential well that converts light having a first photon energy to light having a smaller photon energy and that comprises a II-VI semiconductor that is substantially Cd-free. Some embodiments may include a potential well that comprises a first III-V semiconductor and that converts light having a first photon energy to light having a smaller photon energy, and a window that comprises a second III-V semiconductor and that has a band gap energy greater than the first photon energy.

Cadmium-free re-emitting semiconductor construction

Light sources are disclosed. A disclosed light source includes a III-V based pump light source () that includes nitrogen and emits light at a first wavelength. The light source further includes a vertical cavity surface emitting laser (VCSEL) that converts at least a portion of the first wavelength light () emitted by the pump light source () to at least a partially coherent light at a second wavelength (). The VCSEL includes first and second mirrors () that form an optical cavity for light at the second wavelength. The first mirror () is substantially reflective at the second wavelength and includes a first multilayer stack. The second mirror () is substantially transmissive at the first wavelength and partially reflective and partially transmissive and the second wavelength. The second mirror includes a second multilayer stack. The VCSEL further includes a semiconductor multilayer stack () that is disposed between the first and second mirrors and converts at least a portion of the first wavelength light to the second wavelength light. The semiconductor multilayer stack () includes a quantum well that includes a Cd(Mg)ZnSe alloy.

II-VI MQW VSEL on a heat sink optically pumped by a GaN LD

An arrangement of light sources is attached to a semiconductor wavelength converter. Each light source emits light at a respective peak wavelength, and the arrangement of light sources is characterized by a first range of peak wavelengths. The semiconductor wavelength converter is characterized by a second range of peak wavelengths when pumped by the arrangement of light sources. The second range of peak wavelengths is narrower than the first range of peak wavelengths. The semiconductor wavelength converter is characterized by an absorption edge having a wavelength longer than the longest peak wavelength of the light sources. The wavelength converter may also be used for reducing the wavelength variation in the output from an extended light source.

Down-converted light source with uniform wavelength emission

A novel etching agent for etching II-VI semiconductors is provided. The etching agent includes an aqueous solution of potassium permanganate and phosphoric acid. This etching solution can etch II-VI semiconductors at a rapid rate but tend to be much less reactive with III-V semiconductors. The provided agent can be used in a method for etching II-VI semiconductors.

Wet etching agent for II-VI semiconductors and method

A semiconductor device is provided comprising a first potential well located within a pn junction and a second potential well not located within a pn junction. The potential wells may be quantum wells. The semiconductor device is typically an LED, and may be a white or near-white light LED. The semiconductor device may additionally comprise a third potential well not located within a pn junction. The semiconductor device may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the second or third quantum wells. In addition, graphic display devices and illumination devices comprising the semiconductor device according to the present invention are provided.

Polychromatic LED's and related semiconductor devices

An adapted LED is provided comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). The adapted LED may be a white or near-white light LED. The re-emitting semiconductor construction may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the potential well(s). In addition, graphic display devices and illumination devices comprising the adapted LED according to the present invention are provided.

Growing community of inventors

Woodbury, MN, United States of America

Xiaoguang Sun