Opto Power Corporation

Xiaoguang He

An InGaAsP/AlGaAs/GaAs heterostructure laser diode includes an InGaAsP quantum well and at least a cladding region of AlGaAs while essentially avoiding the deleterious effects attributed to the presence of Al in heterostructure laser diodes. Embodiments with Al present in the cladding region and with Al present in both the waveguide and the cladding regions are described.

InGaAsP/AlGaAs/GaAs hetero structure diode laser containing indium

The cavity of a laser diode is made longer than that which would be dictated by consideration of maximizing the efficiency of the diode. The lateral divergence of the emitted light beam is decreased as the cavity length increases. The lower lateral divergence enables the emitted light beam being focused to produce a greater depth of field for coupling into an optical fiber. In another case, when the fiber size is fixed, lower lateral divergence enables the emitted light beam to being fed into a lower numerical aperture fiber, or enables the beam divergence after fiber to be lower.

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Tucson, AZ, United States of America

Xiaoguang He