Zhejiang University

Najing Technology Corporation Limited

Xiaogang Peng

Yang Li

Yizheng Jin

Chaodan Pu

Wei Fang

Xingliang Dai

Xing Lin

Provided are a QLED and a method for manufacturing a quantum dot. The QLED comprises a quantum dot, the quantum dot comprises a quantum dot body and ligands arranged on an outer surface of the quantum dot body, wherein the ligands comprises at least one electrochemical inert ligand; a reduction potential of the at least one electrochemical inert ligand is greater than a potential of a bottom of conduction band of the quantum dot body; an oxidation potential of the at least one electrochemical inert ligand is less than a potential of top of a valence band the quantum dot body; and the electrochemical inert ligand accounts for at least 80% of all the ligands on the outer surface of the quantum dot body.

QLED and method for manufacturing quantum dot

This present disclosure provides group III-V quantum dots, method for preparing the same. The preparation method comprises: S1, mixing precursor(s) of group III element, a solvent, a surface activation agent, and seeds of group III-V quantum dots to obtain a mixed system; S2, heating the mixed system to a first temperature; and S3, adding precursor(s) of group V element to the mixed system of the first temperature to obtain group III-V quantum dots, wherein, the seed surface of the group III-V quantum dots has a carboxylate ligand, the surface activation agent is acetylacetone or a derivative of acetylacetone or a compound RCOOH with a carboxyl group, and the first temperature is between 120&#xb0; C. and 200&#xb0; C.

Group III-V quantum dots, method for preparing the same

The present application provides a single photon source device, a preparation method thereof, and applications of the same. The single photon source device includes a first electrode layer, a first carrier transport layer, a quantum dot light-emitting layer, a second carrier transport layer and a second electrode layer which are stacked in sequence, and the quantum dot light-emitting layer comprises an insulating material and quantum dots dispersed in the insulating material, neighbor distance of at least a part of the quantum dots is greater than or equal to the central wavelength of the luminescent spectrum of quantum dots.

Single photon source device, a preparation method thereof and applications of the same

Embodiments disclosed herein relate to group III-V QDs and manufacturing methods thereof. More specifically, the embodiments disclosed herein relate to group III-V QDs that have at least one shell of a group II-VI compound surrounding the group III-V QD core. Thus, the QDs disclosed herein are core/shell QDs and in some embodiments may be a core/shell/shell QD. For example, the group III-V QD core material may be surrounded by a shell of a group II-VI compound, which itself may be surrounded by a shell of a group II-VI compound.

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Zhejiang, China

Xiaogang Peng