Boe Technology Group Co., Ltd.

Beijing Boe Display Technology Co., Ltd.

Xiaogai Chun

Lianjie Qu

Yonglian Qi

Hebin Zhao

Bingqiang Gui

Xue Feng Gao

Shuai Liu

Jing Niu

Guangdong Shi

The present application discloses an array substrate, a display apparatus and a method of fabricating an array substrate. The array substrate has a plurality of first bottom-gate type thin film transistors each of which including a metal oxide active layer and a plurality of second bottom-gate type thin film transistors each of which including a silicon active layer.

Array substrate, display apparatus, and method of fabricating array substrate

An array substrate, a method for manufacturing the same, a display panel, and a display device are provided. In the method for manufacturing an array substrate provided by an embodiment of the present disclosure, the annealing process for the first active layer in the pixel area is performed by a high temperature required in the dehydrogenation process for the second active layer in the peripheral area.

Array substrate, method for manufacturing the same, display panel, and display device

A dual-gate TFT array substrate and manufacturing method thereof and a display device are provided. The manufacturing method includes: forming a common electrode and a top-gate electrode through one patterning process. The manufacturing method reduces the times of patterning process and simplifies the process flow.

Dual-gate TFT array substrate and manufacturing method thereof, and display device

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Beijing, China

Xiaogai Chun