Chinese Academy of Sciences

Shanghai United Imaging Healthcare Co., Ltd.

City University of Hong Kong

Xiaofeng Zhou

Yuelin Wang

Lufeng Che

Bin Xiong

Zuankai Wang

Ruojie Tao

Jiaqian Li

The present disclosure provides devices, methods, and systems for controlling a connection, via a communication apparatus, between a first apparatus and a second apparatus. For instance, the methods may include generating a connection signal in response to determining that a second apparatus has established a new connection with the communication apparatus; generating a control signal based on the connection signal; and changing, based on the control signal, a connection state between the first apparatus and the communication apparatus to cause a new connection relationship between the first apparatus and the second apparatus to be established for a communication between the first apparatus and the second apparatus.

Devices, systems, and methods for controlling communication between apparatuses

There is disclosed a unidirectional liquid transport system. The system, or a liquid diode, has an array of elongate units. Each unit is defined by a surrounding fencing, and includes a region generally resembling a U-shaped micro-scale island with a proximal end on one side having an opening and a distal end on the opposite side thereof. A channel is defined between a lateral side of the island and an adjacent fencing thereof, and the channel is divergent from the proximal end towards the distal location on the opposite side thereof. The island includes a reentrant member configured to, upon contact with droplets of a liquid to be transported, initially arrest flow of the liquid and produce a pinning acting to allow building up of excess surface energy, and subsequently cause coalescence of the liquid thus converting the surface energy to kinetic energy for movement of the liquid; and surfaces of the units are fabricated on silicon wafer.

Unidirectional liquid transport systems and methods of manufacture thereof

The present invention provides a capacitive acceleration sensor with a bending elastic beam and a preparation method. The sensor at least includes a first electrode structural layer, a middle structural layer and a second electrode structural layer; wherein the first electrode structural layer and the second electrode structural layer are provided with an electrode lead via-hole, respectively; the middle structural layer includes: a frame formed on a SOI silicon substrate with a double device layers, a seismic mass whose double sides are symmetrical and a bending elastic beam with one end connected to the frame and the other end connected to the seismic mass, wherein anti-overloading bumps and damping grooves are symmetrically provided on two sides of the seismic mass, and the bending elastic beams at different planes are staggered distributed and are not overlapped with each other in space. Since the bending times, the total length and the total width of the bending elastic beam can be prepared as needed, capacitive acceleration sensors with different sensitivities can be manufactured according to the present invention, and the manufacturing has high flexibility.

Capacitive acceleration sensor with a bending elastic beam and preparation method thereof

The present invention provides a variable area capacitive lateral acceleration sensor and a preparation method. The acceleration sensor at least includes: three-layer stack structure bonded by a first substrate, a second substrate and a third substrate which are electrically isolated with each other, wherein, the second substrate includes a movable seismic mass, a frame surrounded the movable seismic mass, a elastic beam connected to the movable seismic mass and the frame, a plurality of bar structure electrodes positioned on two surfaces of the movable seismic mass, an anti-overloading structure arranged on the movable seismic mass, etc.; the plurality of first bar structure electrodes on the first substrate and a plurality of second bar structure electrodes on one surface of the second substrate form capacitor structure, the plurality of third bar structure electrodes on the third substrate and a plurality of second bar structure electrodes on one surface of the second substrate form capacitor structure, and those two capacitor form differential sensitive capacitor structure. The present invention has the advantage of high sensitivity and good linearity, and different kinds of beam shapes may be designed as needed, to prepare capacitive acceleration sensors with different sensitivity, and the preparation has high flexibility.

Variable area capacitive lateral acceleration sensor and preparation method thereof

A capacitive acceleration sensor with an 'H'-shaped beam and a preparation method. The sensor at least includes: a first electrode structural layer, a middle structural layer and a second electrode structural layer; the first electrode structural layer and the second electrode structural layer are provided with electrode lead via holes, respectively; the middle structural layer includes: a frame formed at SOI silicon substrate having a double device layer, a seismic mass whose double sides are symmetrical, and an 'H'-shaped elastic beam whose double sides are symmetrical, with one end connected to the frame and the other end connected to the seismic mass, there are anti-overloading bumps and damping grooves symmetrically provided on the two sides of the seismic mass, and the &#x201c;H&#x201d;-shaped elastic beam and a bulk silicon layer of the oxygen containing silicon substrate satisfy the requirements therebetween:&#x221a;{square root over (2)}()&#x3c;&#x221a;{square root over (2)}

Growing community of inventors

Shanghai, China

Xiaofeng Zhou