Samsung Electronics Co., Ltd.

Xiaofeng Wang

Subramanya Mayya

In-Seok Yeo

ZongLiang Huo

Dong-Woo Kim

Hong-Sik Yoon

Sun-Woo Lee

Seong-Ho Moon

A method of forming a microelectronic device includes forming a groove structure having opposing sidewalls and a surface therebetween on a substrate to define a nano line arrangement region. The nano line arrangement region has a predetermined width and a predetermined length greater than the width. At least one nano line is formed in the nano line arrangement region extending substantially along the length thereof and coupled to the surface of the groove structure to define a nano line structure. Related devices are also discussed.

Nano line structures in microelectronic devices

In a memory device having a carbon nanotube and a method of manufacturing the same, the memory device includes a lower electrode, an upper electrode having a first void exposing a sidewall of a diode therein, an insulating interlayer pattern having a second void exposing a portion of the lower electrode between the lower electrode and the upper electrode, and a carbon nanotube wiring capable of being electrically connected with the diode of the upper electrode by a voltage applied to the lower electrode. The memory device may reduce generation of a leakage current in a cross-bar memory.

Memory devices having a carbon nanotube

Methods of forming nano line structures in microelectronic devices

Growing community of inventors

Gyeonggi-do, South Korea

Xiaofeng Wang