Nanjing University

Yan, Feng

Xiaofeng Bu

Yi Shi

Rong Zhang

Feng Yan

Yue Xu

Cheng Yang

Limin Zhang

Cheng Mao

Haowen Ma

Yuqian Li

Xiangshun Kong

Zhijian Huang

Zhangnan Li

Haoguang Xia

Xu Cao

Chen Shen

Fuwei Wu

Lin Pu

A photosensitive detector includes an array of detection units, each detection unit having a light-sensing transistor (), a charge storage transistor () and a reading transistor (), or comprising a light-sensing transistor, a charge transfer transistor (), a charge storage transistor and a reading transistor. The light-sensing transistor is configured to realize the light-sensing function of the photosensitive detector; the charge storage transistor is configured to store photogenerated charges; the reading transistor is configured to read a signal; and, the charge transfer transistor is configured to control the transfer of the photogenerated charges. The photosensitive detector can realize global shutter and fast reading, and is compatible with the existing floating gate CMOS process, and the failure of any pixel will not affect the normal operation of the whole imaging array.

Photosensitive detector, imaging sensor chip formed using the photosentive detector, and detection method

A two-by-two array consists of four pixels. Each pixel comprises one light-sensing transistor and one reading transistor. Both the light sensing transistor and the reading transistor are formed above a same P-type semiconductor substrate, and have a composite dielectric gate structure. The substrates of the four reading transistors are connected to form a regular octagonal ring structure located in the center of the array. On four sides of the regular octagonal ring structure, four heavily-doped N+ regions are formed on the substrates not covered with the composite dielectric gate, of which every two regions are opposite to each other and form right angles, wherein two opposite heavily-doped N+ regions are connected to form a shared N+ source, and the other two are connected to form a shared N+ drain.

2&#xd7;2 array arrangement based on composite dielectric gate photosensitive detector and operating method thereof

A photosensitive detection unit has a composite dielectric gate MOS-C portion and a composite dielectric gate MOSFET portion. The two portions are formed above a same P-type semiconductor substrate, and share a charge coupled layer. A plurality of the photosensitive detection units are arranged on a same P-type semiconductor substrate in form of an array to obtain a detector. Adjacent unit pixels in the detector are isolated by deep trench isolation regions and P-type injection regions below the isolation regions. During the detection, the P-type semiconductor substrate in the composite dielectric gate MOS-C portion senses light and then couples photoelectrons to the charge coupled layer, and photoelectronic signals are read by the composite dielectric gate MOSFET portion.

Dual-device photosensitive detection unit based on composite dielectric gate, detector and method thereof

Provided is a novel active noise control biosensor including a detection plate, a signal detection module and a control module. The signal detection module includes a signal superimposable transistor and a readout circuit. The signal superimposable transistor has a secondary input terminal and a primary input terminal. The detection plate inputs a detected primary signal to the primary input terminal, and the control module processes an output signal from the signal detection module by a signal processing system and generates and inputs a secondary signal to the secondary input terminal. The primary signal and the secondary signal received by the signal superimposable transistor are superimposed to realize active noise control, and the superimposed signal is read out by the readout circuit and output as an input signal to the control module. The biosensor can achieve the detection of potential or charges and have active noise control characteristics.

Active noise control biosensor

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Jiangsu, China

Xiaofeng Bu