Huawei Technologies Co., Limited

Shenzhen Tcl New Technology Co., Ltd.

Chinese Academy of Sciences

Commscope Telecommunications (shanghai) Co. Ltd.

Other

Hewlett-packard Development Company, L.p.

Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.

Beitefulai Technology Co., Ltd

Shanghai Jiaotong University

Shenzhen Tcl Digital Technology Ltd.

Hangzhou Dptech Technologies Co., Ltd.

Huaneng Shanghai Shidongkou Second Power Plant

Suzhou Yangtze Delta Academy of Bio-x Science Ltd.

Xiaodong Zhang

Wangjun Wu

Xiwen Zhang

Yulin Li

Fengqing Yan

Baoshun Zhang

LiMing Wang

Michael V Leman

Dean J Richtsmeier

Johan Christer Johansson

Tao Pu

Renli Xie

HuiLi Fu

Yong Guan

Baixiang Han

Feng Liu

Jun Hu

Zhen Zhu

Xing Wei

Jun Shen

Yang Gu

Liren Zhou

Fu Chen

Jueping Wang

Peng Lan

Jianchun Wang

Honggang Xu

Yong Cai

Qingmao Hu

Fujun Yang

Chunhai Fan

Fang Chen

Guohao Yu

Zhiqiang Ma

Qiang Zhu

Jyh Rong Lin

Tonglong Zhang

Xiangyang Liu

Yuqing Sang

Heng Li

Wenxin Tang

Guangrui You

Chih Chiang Ma

Fangzheng Wei

Johansson Johan

Haikuo Li

Jiehuan Huang

Junhong Lv

Liyilei Su

Zhizhou Zhang

Xianjun Fu

Sangcheol Song

Feifei Chen

Shaohe Cai

Xuefeng Lu

Desheng Zhao

Siqin Chen

Tianyi Sun

Chunyan Huang

Simin Wang

Tiantian Wang

Yaming Fan

Wenkui Lin

Zeyin Wei

Chunbai Fan

Guangjian Zhou

A chip package on package structure includes a primary chip stack unit having pins insulated and spaced from each other on a first surface; a first bonding layer disposed on the first surface, where the first bonding layer includes bonding components insulated and spaced from each other, each bonding component includes a bonding part, and any two bonding parts are insulated and have a same cross-sectional area, and the bonding components are separately bonded to the pins; and secondary chip stack units, disposed on a surface of a side that is of the first bonding layer and that is away from the primary chip stack unit, where the secondary chip stack unit has micro bumps insulated and spaced from each other, and each of the micro bumps is bonded to one of the bonding components.

Chip package on package structure, packaging method thereof, and electronic device

The present invention relates to a low-profile splice protection system for protecting multi-fibre fusion splice sites. The splice protection system comprises coating material to package the splice site and may comprise a protective housing.

System and method for protecting optical fibre splice

A chip package structure includes a first chip, a second chip, and a carrier board. The first chip is disposed between the second chip and the carrier board. An active layer of the first chip is opposite to an active layer of the second chip. A first interconnection structure is disposed between the first chip and the second chip and is configured to couple the active layer of the first chip to the active layer of the second chip. A first conductor pillar is disposed in the first chip. One end of the first conductor pillar is coupled to the active layer of the first chip, and the other end of the first conductor passes through the first chip to be coupled to a circuit in the carrier board.

Chip package structure and chip packaging method

Game table

Disclosed is a saturation enhancement method, the method comprising: performing color space conversion on an input image to obtain color data of color conversion; performing saturation expansion on the color data of the color conversion to obtain expanded color data; and performing Gamma preprocessing on the expanded color data to obtain processed color data. Also disclosed are a saturation enhancement device and a computer readable storage medium.

Saturation enhancement method and device, and computer readable storage medium

A anti-peeping method of a display screen includes a display process and a hiding process: removing a cover; recognizing, by an optical sensor, a brightness change from dark to bright, and transmitting a signal to a display screen; displaying, by the display screen, a virtual card; returning the cover; recognizing, by the optical sensor, a brightness from bright to dark, and transmitting a signal to the display screen; and canceling, by the display screen, the display of the virtual card. The anti-peeping method eliminates the risk of being peeped at. The electronic game table includes a table body, a public screen, player screens, and a signal processing module. A user clicks on the public screen to trig a dealing instruction, and the signal processing module is configured to receive the dealing instruction, randomly send card data to a plurality of player screens, and display patterns on the display screens.

Display screen and anti-peeping method thereof, and electronic game table

The present disclosure provides a gamut mapping method and a system. The method includes: obtaining a brightness value of each sampling point corresponding to image data of a transmission end on a basis of a three-dimensional mapping table; performing equal-brightness cutting on a three-dimensional gamut model of the transmission end and a three-dimensional gamut model of a display end separately on a basis of the brightness value of each sampling point to form a corresponding equal-brightness two-dimensional surface; and performing color mapping on a basis of the formed equal-brightness two-dimensional surface and outputting mapping data. Hence, during gamut mapping, brightness and tone are kept unchanged, precise matching of three-dimensional gamut mapping from a transmission gamut to a display gamut is realized, avoiding problems of image distortion or a display error or the like due to mapping mismatch between the transmission gamut and the display gamut.

Gamut mapping method and system

A method for capturing images on a super-large-scale power equipment (SLSPE) based on a camera free viewing angle is provided, including: determining a first range of the SLSPE and a second range of the camera free viewing angle of each of installed cameras; determining a total number, positions, angles, focal lengths, apertures of the cameras, so as to make, by a synchronous calibration, the combined capturing region fully cover the SLSPE according to the first range and the second range; capturing synchronously images and video and adding timestamps to the captured images and video; performing classified packaging to the captured images and video according to the timestamps, so as to group a plurality of specific images and video captured at the same time into a package; and performing seamlessly splicing on the specific images and video of the package to obtain a seamlessly spliced overall view of the SLSPE.

Method and system for capturing images on super-large-scale power equipment based on free viewing angle

The disclosure provides a gallium oxide film based on sapphire substrate as well as a growth method and an application thereof. The gallium oxide film based on sapphire substrate is prepared by a method below, including: forming more than one α-(AlGa)Ostrain buffering layers on the sapphire substrate by means of pulsed epitaxial growth, wherein 0.99≥x≥0.01; and forming gallium oxide epitaxial layers on the α-(AlGa)Ostrain buffering layers. The growth method provided can not only avoid the technical difficulty of contradictory epitaxial temperatures of α-GaOand α-AlO, but also effectively reduce the defect density of α-GaOepitaxial film, thus further improving the crystal quality of the α-GaOepitaxial film materials.

Gallium oxide film based on sapphire substrate as well as growth method and application thereof

A film bulk acoustic resonator and a fabricating method thereof is provided. The fabricating method includes: fabricating a lower electrode on a first surface of an SOI substrate; forming piezoelectric layers on the first surface of the SOI substrate and the lower electrode; forming top electrodes on the piezoelectric layers; processing an air cavity on a second surface of the SOI substrate, wherein the second surface and the first surface are oppositely arranged. The fabricating method simplifies a preparation process of FBAR, a quality of a AlN film crystal grown though the fabrication method is high, an improvement of a device performance is facilitated, and meanwhile a thickness of a top silicon is controlled through a position of a silicon injected oxygen isolation to regulate a frequency of the film bulk acoustic resonator.

Fabricating method of film bulk acoustic resonator

A group III nitride transistor structure capable of reducing a leakage current and a fabricating method thereof are provided. The group III nitride transistor structure includes: a first heterojunction and a second heterojunction which are laminated, wherein the first heterojunction is electrically isolated from the second heterojunction via a high resistance material and/or insertion layer; a first electrode, a second electrode and a first gate which are matched with the first heterojunction, wherein a third semiconductor is arranged between the first gate and the first heterojunction, and the first gate is also electrically connected with the first electrode; a source, a drain and a second gate which are matched with the second heterojunction, wherein the source and the drain are also respectively electrically connected with the first gate and the second electrode, and a sixth semiconductor is arranged between the second gate and the second heterojunction.

Group III nitride transistor structure capable of reducing leakage current and fabricating method thereof

A scene-based image processing method includes: performing decoding after acquiring video data to obtain multiple image frames, and identifying key frame images by performing key frame detection (S); analyzing similarity between the content of two adjacent key frame images, and determining whether the difference in the content of the two adjacent key frame images is within a preset threshold (S); and when the difference in the content of the two adjacent key frame images is within the preset threshold, determining that the two adjacent key frame images are a same scene, uniformly performing image feature statistics compilation, overlaying feature information, and performing image enhancement on a same scene by using a similar enhancement processing curve (S).

Scene-based image processing method, apparatus, smart terminal and storage medium

This application describes a virtual machine deployment method and an operation and maintenance management (OMM) virtual machine. The method includes: obtaining, by an OMM virtual machine, a quantity and a specification of service virtual machines created in virtual network function application software to which the OMM virtual machine belongs; and determining, by the OMM virtual machine based on load that needs to be carried by the application software and the quantity and the specification of the service virtual machines, a module to be configured for each service virtual machine. The described implementations avoid or reduce waste of virtual machine resources.

Virtual machine deployment method and OMM virtual machine

The present invention provides a pixel driving circuit and a display panel. The pixel driving circuit includes a light emitting module and a compensation driving module which are electrically connected. The compensation driving module includes a doubled-gate driving thin film transistor, and is configured to charge a bottom gate of the doubled-gate driving thin film transistor and adjust a threshold voltage to an initial value in an initial stage. The compensation driving module receives a reference voltage to discharge the bottom gate of the doubled-gate driving thin film transistor in a threshold voltage compensation, realizing a compensation of the threshold voltage.

Pixel driving circuit and display panel

Growing community of inventors

Shanghai, China

Xiaodong Zhang