1. Qualcomm Incorporated (92 from 40,378 patents)

2. Other (1 from 831,952 patents)

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2. 11500960 - Memory cell for dot product operation in compute-in-memory chip

3. 11494629 - Charge-sharing compute-in-memory system

4. 10964380 - Integrated device comprising memory bitcells comprising shared preload line and shared activation line

5. 10777259 - Static random-access memory (SRAM) for in-memory computing

6. 10103319 - Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices

7. 10043967 - Self-compensation of stray field of perpendicular magnetic elements

8. 10008537 - Complementary magnetic tunnel junction (MTJ) bit cell with shared bit line

9. 9935258 - Thermally tolerant perpendicular magnetic anisotropy coupled elements for spin-transfer torque switching device

10. 9929211 - Reducing spin pumping induced damping of a free layer of a memory device

11. 9842638 - Dynamically controlling voltage for access operations to magneto-resistive random access memory (MRAM) bit cells to account for process variations

12. 9721634 - Decoupling of source line layout from access transistor contact placement in a magnetic tunnel junction (MTJ) memory bit cell to facilitate reduced contact resistance

13. 9634237 - Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices

14. 9620706 - Magnetic etch stop layer for spin-transfer torque magnetoresistive random access memory magnetic tunnel junction device

15. 9590010 - Perpendicular magnetic tunnel junction (pMTJ) devices employing a thin pinned layer stack and providing a transitioning start to a body-centered cubic (BCC) crystalline / amorphous structure below an upper anti-parallel (AP) layer