Ningbo Semiconductor International Corporation

Shanghai Jadic Optoelectronics Technology Co., Ltd

Shanghai Huali Microelectronics Corporation

Xiaochuan Wang

Lei Zhang

Haoyu Chen

Zhi Tian

Qiwei Wang

Tao Hu

The present invention provides a semiconductor structure for a split gate flash memory cell and a method of manufacturing the same. The split gate flash memory cell provided by the present invention at least includes a select gate and a floating gate formed on the substrate, one side of the select gate is formed with an isolation wall, and the floating gate is on the other side of the isolation wall. An ion implantation region is formed in an upper portion of the substrate below the isolation wall, wherein the ion implantation type of the ion implantation region is different from the ion implantation type of the substrate. The manufactured split gate flash memory cell can reduce the influence of the channel inversion region on the channel current, thereby improving the characteristics of the channel current of the flash cell and optimizing the device performance.

Semiconductor structure of split gate flash memory cell

Film bulk acoustic resonator (FBAR) is provided. An exemplary FBAR includes a substrate; a first insulating material layer on the substrate, the first insulating material layer containing a first cavity; a second insulating material layer on the first insulating material layer, the second insulating material layer containing a second cavity and a third cavity spaced apart from the second cavity, the second cavity and the third cavity both in communication with the first cavity; a resonator sheet covering the second cavity and partially extending over the second insulating material layer; a third insulating material layer over the second insulating material layer and the resonator sheet, the third insulating material layer containing a fourth cavity, the fourth cavity in communication with the third cavity, and the fourth cavity partially overlapping the second cavity; and a capping layer on the third insulating material layer.

Film bulk acoustic resonator

Methods for forming a film bulk acoustic resonator (FBAR) are provided. In the method, formation of several mutually overlapped and hence connected sacrificial material layers above and under a resonator sheet facilitates the removal of the sacrificial material layers. Cavities left after the removal overlap at a polygonal area with non-parallel sides. This reduces the likelihood of boundary reflections of transverse parasitic waves causing standing wave resonance in the FBAR, thereby enhancing its performance in parasitic wave crosstalk. Further, according to the disclosure, the FBAR is enabled to be integrated with CMOS circuitry and hence exhibits higher reliability.

Method for forming film bulk acoustic resonator

The present invention provides a semiconductor structure for a split gate flash memory cell and a method of manufacturing the same. The split gate flash memory cell provided by the present invention at least includes a select gate and a floating gate formed on the substrate, one side of the select gate is formed with an isolation wall, and the floating gate is on the other side of the isolation wall. An ion implantation region is formed in an upper portion of the substrate below the isolation wall, wherein the ion implantation type of the ion implantation region is different from the ion implantation type of the substrate. The invention also provides a manufacturing method for manufacturing the above-mentioned split gate flash memory cell, and the manufacturing method provided by the invention can be compatible with the existing manufacturing process of the split gate flash memory cell without increasing the process cost and the process complexity. The manufactured split gate flash memory cell can reduce the influence of the channel inversion region on the channel current, thereby improving the characteristics of the channel current of the flash cell and optimizing the device performance.

Semiconductor structure of split gate flash memory cell and method for manufacturing the same

A film bulk acoustic wave resonator includes a first substrate; a first insulating material layer, formed on the first substrate; a first cavity, formed in the first insulating material layer with an opening facing away from the first substrate; and an acoustic-wave resonant plate, including a first electrode, a piezoelectric oscillation plate, and a second electrode stacked on the first insulating material layer. The piezoelectric oscillation plate is disposed between the first electrode and the first electrode. The first electrode includes a first electrode cavity above the first cavity. The second electrode includes a second cavity above the first cavity. At least a portion of a boundary of the piezoelectric oscillation plate is formed by a boundary of the first electrode cavity and a boundary of the second electrode cavity. The boundary of the piezoelectric oscillation plate has an irregular polygonal shape without having two parallel edges.

Film bulk acoustic wave resonators and fabrication methods thereof

A film bulk acoustic resonator (FBAR) and a method of fabricating the FBAR are disclosed. In the method, formation of several mutually overlapped and hence connected sacrificial material layers above and under a resonator sheet facilitates the removal of the sacrificial material layers. Cavities left after the removal overlap at a polygonal area with non-parallel sides. This reduces the likelihood of boundary reflections of transverse parasitic waves causing standing wave resonance in the FBAR, thereby enhancing its performance in parasitic wave crosstalk. Further, according to the invention, the FBAR is enabled to be integrated with CMOS circuitry and hence exhibits higher reliability.

Film bulk acoustic resonator and method of fabrication same

A radio frequency integrated circuit (RFIC) device and a method for fabricating same are disclosed. The RFIC device includes: a first semiconductor layer having a first surface, a second surface and a thickness of smaller than 3 &#x3bc;m; a first dielectric layer on the first surface of the first semiconductor layer; a semiconductor component within the first semiconductor layer and the first dielectric layer; a second dielectric layer on the second surface of the first semiconductor layer, the second dielectric layer having a thickness of smaller than 1 &#x3bc;m; and a sheet-like heat sink that is formed on the surface of the second dielectric layer opposite to the first semiconductor layer for dissipating heat from the semiconductor component. Efficient dissipation of heat from an RF transistor to a certain extent can be achieved by the RFIC device.

Method of fabricating RFIC device

A display driver panel device and a method therefor are disclosed. The device includes: an image sensor array consisting of pixel sensor elements arranged in M rows and N columns; and a display driver array consisting of display driver elements arranged in M rows and N columns. Each of the display driver elements corresponds to a respective one of the pixel sensor elements. As such, first display input signals generated by the pixel sensor elements from a received external imaging radiation can be sent to the respective corresponding display driver elements. As a result, the display driver elements respond at the same time, resulting in an increased response speed of the display driver panel device.

Display driver panel device and method for driving same

A radio frequency integrated circuit (RFIC) device and methods for fabricating same are disclosed. The RFIC device includes: a first semiconductor layer having a first surface, a second surface parallel to the first surface and a thickness of smaller than 3 &#x3bc;m; a first dielectric layer on the first surface of the first semiconductor layer; a semiconductor component within the first semiconductor layer and the first dielectric layer; a second dielectric layer on the second surface of the first semiconductor layer, the second dielectric layer having a thickness of smaller than 1 &#x3bc;m; and a sheet-like heat sink formed on a surface of the first dielectric layer opposite to the first semiconductor layer for dissipating heat from the semiconductor component. Efficient dissipation of heat from an RF transistor to a certain extent can be achieved by the RFIC device.

Growing community of inventors

Shanghai, China

Xiaochuan Wang