Spansion Llc.

Merck Patent Gmbh

Konarka Technologies, Inc.

Xiaobo Shi

Richard Paul Kingsborough

Russell A Gaudiana

David P Waller

Zhengguo Zhu

Juri Krieger

Christoph Brabec

Igor Sokolik

Swaroop Kaza

David Gaun

Christoph Waldauf

William G Leonard

Howard Berke

Photovoltaic cells with thiazole-containing polymers, as well as related components, systems, and methods, are disclosed.

Photovoltaic cell with thiazole-containing polymer

Photovoltaic cells with silole-containing polymers, as well as related systems, methods and components are disclosed.

Photovoltaic cell with silole-containing polymer

This disclosure relates to a polymer that includes a first comonomer repeat unit containing a benzothiadiazole moiety, a thiophene oxide moiety, a cyclopentadithiophene oxide moiety, a thiadiazoloquinoxaline moiety, a benzoisothiazole moiety, a benzothiazole moiety, a thienothiophene moiety, a thienothiophene oxide moiety, a dithienothiophene moiety, a dithienothiophene oxide moiety, or a tetrahydroisoindole moiety. The polymer can be used as a photoactive material in a photovoltaic cell. This disclosure also relates to such photovoltaic cells, as well as modules containing such photovoltaic cells.

Polymers with low band gaps and high charge mobility

The present memory device includes first and second electrodes, an active layer and a passive layer, the active and passive layers being between the first and second electrodes, with either or both of the active layer and passive layer being made up a plurality of self-assembled sublayers.

Memory devices with active and passive layers having multiple self-assembled sublayers

The present memory device includes first and second electrodes, a passive layer between the first and second electrodes; and an active layer between the first and second electrodes, the active layer being of dendrimeric material which provides passages through the active layer.

Memory device with active layer of dendrimeric material

The present memory device includes first and second electrodes, an active layer; and a passive layer, the active and passive layers being between the first and second electrodes, with at least one of the active layer and passive layer being a doped a sol-gel.

Memory devices with active and passive doped sol-gel layers

The present memory structure includes first and second electrodes, a passive layer, and an active layer containing nitrogen, the passive and active layers being between the first and second electrodes. Metal ions in the active layer bind to the nitrogen thereof, enhancing retention of the metal ions in the active layer for improved, stable data retention.

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Centennial, CO, United States of America

Xiaobo Shi