Shanghai Hua Hong Nec Electronics Company, Limited

Shanghai Huali Integrated Circuit Corporation

Shanghai Huahong Grace Semiconductor Manufacturing Corporation

Xiaobo Guo

Wei Zhang

Cong Zhang

Yuyang Bian

Lulu Lai

The application discloses a method for forming a fin structure in a fin field effect transistor process, which includes: performing photolithography and etching for a first time to form a first core layer pattern and a second core layer pattern, and depositing an etching mask layer; etching back the etching mask layer to form sidewalls of the first core layer pattern and sidewalls of the second core layer pattern; performing photolithography for a second time; etching the substrate for a first time to form fins and a planar active area consisting of a substrate material; removing sidewalls of a first photoresist pattern, a second photoresist pattern and the second core layer pattern, and reserving the second core layer pattern; performing photolithography for a third time; etching the substrate for a second time to form reference layer overlay mark and a fin cut area consisting of the substrate material.

Method for forming fin structure in fin field effect transistor process and fin structure

The present application provides a dynamic illumination method based on a scan exposure machine, providing a mask used for exposure and a GDS file corresponding to the mask; dividing pattern information on the mask into n areas with the same width along the direction of movement of the mask during the exposure; performing SMO computation on the pattern information in the n areas, so as to generate n SMO files corresponding to the n areas respectively; performing combinatorial optimization on the n SMO files to obtain a DSMO file; generating a driver of a light source reflector array according to the DSMO file, the illumination; and controlling a reflector array of an exposure machine by calling the driver of the light source reflector array. The DSMO method is performed in each exposure slit area, so as to improve the illumination optimization for a pattern.

Dynamic illumination method based on scan exposure machine

A method of forming a patterned film on both a bottom and a top-surface of a deep trench is disclosed. The method includes the steps of: 1) providing a substrate having a deep trench formed therein; 2) growing a film over a bottom and a top-surface of the deep trench; 3) coating a photoresist in the deep trench and over the substrate and baking the photoresist to fully fill the deep trench; 4) exposing the photoresist to form a latent image that partially covers the deep trench in the photoresist; 5) silylating the photoresist with a silylation agent to transform the latent image into a silylation pattern; 6) etching the photoresist to remove a portion of the photoresist not covered by the silylation pattern; and 7) etching the film to form a patterned film on both the bottom and the top-surface of the deep trench.

Method of forming patterned film on a bottom and a top-surface of a deep trench

A method of back-side patterning of a silicon wafer is disclosed, which includes: depositing a protective layer on a front side of a silicon wafer; forming one or more deep trenches through the protective layer and extending into the silicon wafer by a depth greater than a target thickness of the silicon wafer; flipping over the silicon wafer and bonding the front side of the silicon wafer with a carrier wafer; polishing a back side of the silicon wafer; performing alignment by using the one or more deep trench alignment marks and performing back-side patterning process on the back side of the silicon wafer; and de-bonding the silicon wafer with the carrier wafer.

Method of back-side patterning

A method of double-sided patterning including positioning a first silicon wafer with its back side facing upwards and forming one or more deep trenches serving as alignment marks on the back side of the first silicon wafer; performing alignment with respect to the alignment marks and forming a back-side pattern on the first silicon wafer; depositing a polishing stop layer on the back side of the first silicon wafer; flipping over the first silicon wafer and bonding its back side with the front side of a second silicon wafer; polishing the front side of the first silicon wafer to expose the alignment marks from the front side; performing alignment with respect to the alignment marks and forming a front-side pattern on the first silicon wafer; removing the second silicon wafer and the polishing stop layer to obtain a double-sided patterned structure on the first silicon wafer.

Method of double-sided patterning

A method of manufacturing non-photosensitive polyimide passivation layer is disclosed. The method includes: spin-coating a non-photosensitive polyimide layer over a wafer and baking it; depositing a silicon dioxide thin film thereon; spin-coating a photoresist layer over the silicon dioxide thin film and baking it; exposing and developing the photoresist layer to form a photoresist pattern; etching the silicon dioxide thin film by using the photoresist pattern as a mask; removing the patterned photoresist layer; dry etching the non-photosensitive polyimide layer by using the patterned silicon dioxide thin film as a mask; removing the patterned silicon dioxide thin film; and curing to form a imidized polyimide passivation layer. The method addresses issues of the traditional non-photosensitive polyimide process, including aluminum corrosion by developer, tapered profile of non-photosensitive polyimide layer and generation of photoresist residues.

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Shanghai, China

Xiaobo Guo