Dow Corning Corporation

Dow Silicones Corporation

Jiangsu Nata Opto-electronic Materials Co. Ltd.

Samsung Electronics Co., Ltd.

Ddp Specialty Electronic Materials US 9, LLC

Other

Rohm & Haas Electronic Materials LLC

Nata Semiconductor Materials Co., Ltd.

Dow Corning Corportion

Xiaobing Zhou

Brian David Rekken

Barry M Ketola

Byung Keun Hwang

Michael David Telgenhoff

Noel Mower Chang

Andrew Millward

Don Lee Kleyer

Michael Wolfgang Backer

John M Gohndrone

Travis Sunderland

Xianghuai Wang

Jesse A Maddock

Vasgen Aram Shamamian

Wei Zhu Chen

Peter Cheshire Hupfield

Binh Thanh Nguyen

Eric S Moyer

Igor Chorvath

John Patrick Cannady

Younjoung Cho

Sheng Wang

Jung Sik Choi

Youn Joung Cho

Won Woong Chung

JunHyun Cho

Mark A Wanous

Jeanette Young

Sun Hye Hwang

Kyunghye Jung

Jeanette K Young

Barry Ketola

Michael Backer

Michael D Telgenhoff

Xianghuai William Wang

John Michael Gohndrone

John Gohndrone

A method of making a trihalodisilane, the method comprising: combining a reductive effective amount of an alkylaluminum hydride, a halodisilane comprising at least 4 halogen atoms, and a solvent at a temperature <80° C. and reducing the halodisilane to form a reaction product mixture comprising a trihalodisilane and an alkylaluminum halide.

Synthesis of 1,1,1-trichlorodisilane

A 1,1,1-tris(organoamino)disilane compound and a method of preparing the 1,1,1-tris(organoamino)disilane compound are disclosed. The method comprises aminating a 1,1,1-trihalodisilane with an aminating agent comprising an organoamine compound to give a reaction product comprising the 1,1,1-tris(organoamino)disilane compound, thereby preparing the 1,1,1-tris(organoamino)disilane compound. A film-forming composition is also disclosed. The film-forming composition comprises the 1,1,1-tris(organoamino)disilane compound. A film formed with the film-forming composition, and a method of forming the film, are also disclosed. The method of forming the film comprises subjecting the film-forming composition comprising the 1,1,1-tris(organoamino)disilane compound to a deposition condition in the presence of a substrate, thereby forming the film on the substrate.

1,1,1-tris(organoamino)disilane compounds and method of preparing same

A method of forming a film on a substrate is disclosed. The method comprises: heating a thiodisilane according to formula (I) (RRRCS)(RN)(Si&#x2014;Si)XH(I) in a chemical vapor deposition (CVD) or atomic layer deposition (ALD) process under thermal or plasma conditions to give a silicon-containing film disposed on the substrate, wherein: subscript s, n, x, h and R, R, R, R, and X are as described herein.

Thio(di)silanes

A method of producing a halosiloxane, the method comprising: combining water, a halosilane, and a first solvent, where the first solvent has a water solubility of &#x3e;1.5 grams in 100 ml of solvent, to form a reaction mixture having a temperature above the melting point temperature of the solvent, partially hydrolyzing and condensing the halosilane to form a reaction product mixture comprising the halosiloxane, the solvent, a hydrogen halide and unreacted halosilane, and, optionally, adding a second solvent with a boiling point&#x2265;the boiling point of the halosiloxane to the reaction mixture or the reaction product mixture.

Method of making a halosiloxane

Thio(di)silanes comprising a thiosilane of formula (A): (RRRCS)(Si)XH(A) wherein subscript s is from 2 to 4 or a thiodisilane of formula (I): (RRRCS)(RN)(Si&#x2014;Si)XH(I) wherein subscript s is from 1 to 6, and wherein R, R, R, R, X and subscripts n, x and h are defined herein. Also compositions comprising same, methods of making and using same, intermediates useful in synthesis of same, films and materials prepared therefrom.

A method of preparing pentachlorodisilane is disclosed. The method comprises partially reducing hexachlorodisilane with a metal hydride compound to give a reaction product comprising pentachlorodisilane. The method further comprises purifying the reaction product to give a purified reaction product comprising the pentachlorodisilane. The purified reaction product comprising pentachlorodisilane formed in accordance with the method is also disclosed.

Method of preparing pentachlorodisilane purified reaction product comprising same

Disclosed is a Silicon Precursor Compound for deposition, the Silicon Precursor Compound comprising trichlorodisilane; a composition for film forming, the composition comprising the Silicon Precursor Compound and at least one of an inert gas, molecular hydrogen, a carbon precursor, nitrogen precursor, and oxygen precursor; a method of forming a silicon-containing film on a substrate using the Silicon Precursor Compound, and the silicon-containing film formed thereby.

Trichlorodisilane

A method of making neopentasilane, the method comprising: contacting perchloroneopentasilane with a reductive effective amount of an alkali metal aluminum hydride in an alkylaluminum compound of formula RAlCl, where R is alkyl having from at least 5 carbon atoms, x is an integer from 1 to 3, and the alkylaluminum compound has a boiling point of at least 250&#xb0; C., at conditions sufficient to reduce the perchloroneopentasilane, to form a reaction product mixture comprising neopentasilane, and separating the neopentasilane from the product mixture to form a neopentasilane isolate.

Method of making aluminum-free neopentasilane

A composition, comprising: trisilylamine and less than 5 ppmw of halogen. A method of making a silylamine comprising combining ammonia and a compound comprising aminosilane functionality, where the compound comprising aminosilane functionality is according to formula (I) RN(R)a(SiH)(I), where Ris an organic polymer, a C-hydrocarbyl group or &#x2014;SiR, where Ris Chydrocarbyl, Ris a C-hydrocarbyl group, H, or &#x2014;SiR, where Ris as defined above, subscript a is 0 or 1, provided that Rand Rmay be the same or different except if Ris phenyl, Ris not phenyl, under sufficient conditions to cause a reaction to form a silylamine and a byproduct.

High purity trisilylamine, methods of making, and use

A method of producing a halosiloxane, the method comprising: i) combining water, a halosilane, and a first solvent to form a reaction mixture, ii) partially hydrolyzing and condensing the halosilane to form a reaction product mixture comprising the halosiloxane, the solvent, unreacted halosilane, and hydrogen halide, iii) adding a second solvent, where the second solvent has a boiling point the boiling point of the halosiloxane, to the reaction mixture in i) or to the reaction product mixture in ii), and iv) recovering the halosiloxane from the reaction product mixture.

A compound that is 2,2,4,4-tetrasilylpentasilane, chemical compositions comprising same, methods of making and purifying 2,2,4,4-tetrasilylpentasilane, the purified 2,2,4,4-tetrasilylpentasilane prepared thereby, and methods of forming silicon-containing materials using 2,2,4,4-tetrasilylpentasilane as a precursor.

2,2,4,4-tetrasilylpentasilane and its compositions, methods and uses

A method for making tris(disilanyl)amine. The method comprises steps of: (a) contacting a disilanyl(alkyl)amine with ammonia to make bis(disilanyl)amine; and (b) allowing bis(disilanyl)amine to produce tris(disilanyl)amine and ammonia.

Tris(disilanyl)amine

A method of making an organoaminosilane compound, comprising i) combining A) a compound comprising a primary or secondary amine, B) monosilane (SiH), and C) a catalyst, where the catalyst comprises magnesium or boron, where A), B) and C) are combined under sufficient conditions to form the organoaminosilane compound and hydrogen. A method of making a silylamine, the method comprising: i) forming an organoaminosilane compound by i) combining A) a compound comprising a primary or secondary amine, B) monosilane (SiH), and C) a catalyst, where the catalyst comprises magnesium or boron, and ii) combining ammonia and the organoaminosilane compound produced in i) under sufficient conditions to form a silylamine product and a byproduct, where the byproduct is a primary or secondary amine.

Method for making an organoaminosilane; a method for making a silylamine from the organoaminosilane

The present invention provides processes for preparing silanylamines, such as disilanylamines and polysilanylamines, and compositions comprising the silanylamines. In one embodiment, the present invention provides processes for preparing a silanylamine compound, the processes comprising reacting a starting compound of general formula RRN&#x2014;(SiH) with an amine compound of general formula RRNH to produce the silanylamine compound of general formula RR&#x2014;N(SiH).

Synthesis of disilanylamines through transamination

Disclosed is a Silicon Precursor Compound for deposition, the Silicon Precursor Compound comprising pentachlorodisilane; a composition for film forming, the composition comprising the Silicon Precursor Compound and at least one of an inert gas, molecular hydrogen, a carbon precursor, nitrogen precursor, and oxygen precursor; a method of forming a silicon-containing film on a substrate using the Silicon Precursor Compound, and the silicon-containing film formed thereby.

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Midland, MI, United States of America

Xiaobing Zhou