Hebei University

Xiaobing Yan

Ziliang Fang

Haidong He

Deliang Ren

Kaiyang Wang

Saibo Yin

Zhen Zhao

A preparation method of a silicon-based molecular beam heteroepitaxy material, a memristor, and use thereof are provided. A structure of the heteroepitaxy material is obtained by allowing a SrTiOlayer, a LaSrMnOlayer, and a (BaTiO)—(CeO)layer to successively grow on a P-type Si substrate. The silicon-based epitaxy structure is obtained by allowing a first layer of SrTiO, a second layer of LaSrMnO, and a third layer of (BaTiO)—(CeO)(in which an atomic ratio of BaTiOto CeOis 0.5:0.5) to successively grow at a specific temperature and a specific oxygen pressure. The preparation method of a silicon-based molecular beam heteroepitaxy material adopts pulsed laser deposition (PLD), which is relatively simple and easy to control, and can achieve the memristor function and neuro-imitation characteristics. A thickness of the first buffer layer of SrTiOcan reach 40 nm.

Preparation method of silicon-based molecular beam heteroepitaxy material, memristor, and use thereof

A circuit system for weight modulation and image recognition of a memristor array includes a personal computer (PC), a field-programmable gate array (FPGA) chip, a digital-to-analog conversion unit, a switch unit, a memristor array unit, an integration and signal amplification circuit, and an analog-to-digital converter. The circuit system selects a to-be-realized function such as array reading and writing, weight modulation or image recognition, converts a command or an RGB value of an image collected by the PC into a corresponding grayscale value, and sends the grayscale value to the FPGA chip. The FPGA chip controls and selects a to-be-modulated memristor array unit through the digital-to-analog conversion unit and the switch unit. An application program of the PC controls the FPGA chip in real time to realize array reading and writing, weight modulation, and image recognition, and then the FPGA chip displays a result on the PC in real time.

Circuit system for weight modulation and image recognition of memristor array

A neuro-bionic device based on a two-dimensional TiCmaterial is provided. The device includes a Pt/Ti/SiO/Si substrate, a neuro-bionic layer formed on a Pt film layer of the Pt/Ti/SiO/Si substrate, and an Al electrode layer formed on the neuro-bionic layer. The neuro-bionic layer is made of a two-dimensional TiCmaterial. The neuro-bionic device of the present invention is prepared by an evaporating coating method and a drop-coating method. The preparation process is relatively simple. The prepared device can successfully simulate the characteristics of synapse. More importantly, the resistance of the device can be modulated continuously under a scanning of a pulse sequence with pulse width and interval of 10 ns, which is beneficial to the application of the device in the ultrafast synapse simulation.

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Baoding, China

Xiaobing Yan