Power Integrations, Inc.

Xiaobin Xin

Michael Shur

Milan Pophristic

Paul Stephen Drzaic

Lei Zhang

Dmitry S Sizov

Nathaniel T Lawrence

Ranojoy Bose

Lina He

Fang Ou

Yuewei Zhang

Optical components such as components that emit light and components that detect light may be provided. Optical components that emit light may include displays having arrays of display pixels with respective light-emitting devices such as crystalline semiconductor light-emitting diodes. Optical components that detect light may include image sensors or other components with arrays of photodetectors. The light-emitting devices and photodetectors in the optical components may be overlapped by metalenses such as multielement metalenses. A multielement metalens may have a first metalens element formed from a first layer of nanostructures arranged and an overlapping second metalens element formed from a second layer of nanostructures. Light sources may be provided on a semiconductor and metalens nanostructures may be formed on an opposing surface of the semiconductor.

Electronic device with stacked metasurface lenses

A circuit includes input drain, source and gate nodes. The circuit also includes a group III nitride enhancement-mode HFET having a source, drain and gate and a voltage shifter having a first terminal connected to the gate of the enhancement mode HFET at a common junction. The circuit also includes a load resistive element connected to the common junction. The drain of the enhancement-mode HFET serves as the input drain node, the source of the enhancement-mode HFET serves as the input source node and a second terminal of the voltage shifter serves as the input gate node.

Enhancement-mode HFET circuit arrangement having high power and a high threshold voltage

Enhancement-mode HFET circuit arrangement having high power and high threshold voltage

Growing community of inventors

Herndon, VA, United States of America

Xiaobin Xin