Seagate Technology Incorporated

Donaldson Comapny, Inc.

Seagate Technologies, Inc.

Xiaobin Wang

Yiran Chen

Dimitar Velikov Dimitrov

Wenzhong Zhu

Haiwen Xi

Hai Li

Hongyue Liu

Yuankai Zheng

Yong Lu

Harry Hongyue Liu

Dexin Wang

Alan Xuguang Wang

Zheng Gao

Wei Tian

Henry F Huang

Kaizhong Gao

Xiaohua Lou

Lei Wang

Shaoping Li

Insik Jin

Xuguang Alan Wang

Andreas Karl Roelofs

Yuan Yan

Ran Wang

Brian Lee

Paul E Anderson

Pat J Ryan

Eileen Yan

Song Sheng Xue

Kirill A Rivkin

Raul Horacio Andruet

Jun Zheng

Markus Siegert

Michael J Cronin

Wei Tan

Chad M Goltzman

Matthew J Anderson

Peter P Vitko

Wengzhong Zhu

Charles E Kotasek

Yuanki Zheng

Embodiments herein relate to monitoring systems that can learn patterns of filtration system operation and then use the learned patterns to monitor ongoing filtration system operation/performance. In a first aspect, a monitoring system for an air filtration system is included having a control circuit, and a pressure sensor, wherein the pressure sensor is in electronic communication with the control circuit. The monitoring system can be configured to store data reflecting signals of the pressure sensor, evaluate the stored data representing a first time period to derive a valve operating pattern, and compare data from the pressure sensor obtained after the first time period against the derived valve operating pattern to identify an abnormal valve event.

Air filtration monitoring system with learning features

Embodiments herein relate to systems and methods for detecting aeration properties in fluids using a vibration sensor. In an embodiment, a system for fluid aeration monitoring is included having a vibration sensor configured to be mounted along a fluid flow path, and a control circuit in signal communication with the vibration sensor. The control circuit can be configured to evaluate a signal received from the vibration sensor and calculate one or more aeration parameters based on signals from the vibration sensor. Other embodiments are also included herein.

Fluid aeration detection systems and methods

Various embodiments of the present invention are generally directed to an apparatus and associated method for updating data in a non-volatile memory array. In accordance with some embodiments, a memory block is formed with a plurality of types of memory cell sectors arranged in data pages of a first type and log pages of a second type that can be updated in-place. A first updated sector is written to a first log page while maintaining an outdated sector in an original data page, and overwritten with a second updated sector.

Data updating in non-volatile memory

A perpendicular magnetic recording medium adapted for high recording density and high data recording rate comprises a non-magnetic substrate having at least one surface with a layer stack formed thereon, the layer stack including a perpendicular recording layer containing a plurality of columnar-shaped magnetic grains extending perpendicularly to the substrate surface for a length, with a first end distal the surface and a second end proximal the surface, wherein each of the magnetic grains has: (1) a gradient of perpendicular magnetic coercivity Hextending along its length between the first end and second ends; and (2) predetermined local exchange coupling strengths along the length.

Perpendicular magnetic recording media with magnetic anisotropy gradient and local exchange coupling

Devices and methods for generating a random number that utilizes a magnetic tunnel junction are disclosed. An AC current source can be in electrical connection to a magnetic tunnel junction to provide an AC current to the magnetic tunnel junction. A read circuit can be used to determine a bit based on a state of the magnetic tunnel junction. A rate of production of the bits can be adjusted, such as by adjusting a frequency or amplitude of the AC current. A probability of obtaining a '0' or '1' bit can be managed, such as by an addition of DC biasing to the AC current.

Random bit generator that applies alternating current (AC) to magnetic tunnel junction to generate a random bit

Magnetic tunnel junctions having a specular insulative spacer are disclosed. The magnetic tunnel junction includes a free magnetic layer, a reference magnetic layer, an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the reference magnetic layer, and an electrically insulating and electronically reflective layer positioned to reflect at least a portion of electrons back into the free magnetic layer.

Magnetic tunnel junction with electronically reflective insulative spacer

A perpendicular magnetic recording medium adapted for high recording density and high data recording rate comprises a non-magnetic substrate having at least one surface with a layer stack formed thereon, the layer stack including a perpendicular recording layer containing a plurality of columnar-shaped magnetic grains extending perpendicularly to the substrate surface for a length, with a first end distal the surface and a second end proximal the surface, wherein each of the magnetic grains has: (1) a gradient of perpendicular magnetic anisotropy field Hextending along its length between the first end and second ends; and (2) predetermined local exchange coupling strengths along the length.

A magnetic recording head includes a magnetic writer comprising a main write pole and a return write pole. The magnetic recording head includes a write heater assembly comprising at least one first heater subassembly and at least one second heater subassembly. At least part of the magnetic write head is disposed between the first heater subassembly and the second heater subassembly. When the first heater subassembly, the second heater subassembly, and the magnetic writer are energized, a variation in the thermal protrusion of the head media interface of the magnetic recording head may be less than about 20 nm along the down track and/or cross track directions.

Heater assembly and method of heating

A method of switching the magnetization orientation of a ferromagnetic free layer of an out-of-plane magnetic tunnel junction cell, the method including: passing an AC switching current through the out-of-plane magnetic tunnel junction cell, wherein the AC switching current switches the magnetization orientation of the ferromagnetic free layer.

Method of switching out-of-plane magnetic tunnel junction cells

An apparatus and method for storing data in a semiconductor memory. In accordance with some embodiments, the semiconductor memory has a continuous storage layer of soft ferromagnetic material having opposing top and bottom surfaces with overall length and width dimensions and an overall thickness dimension between the opposing top and bottom surfaces. A plurality of spaced apart, discrete reference layers are adjacent a selected one of the opposing top or bottom surfaces of the continuous storage layer with each having a fixed magnetic orientation. A plurality of spaced apart, discrete barrier layers are disposed in contacting relation between the discrete reference layers and the continuous storage layer.

Magnetic memory element with multi-domain storage layer

A magnetic tunnel junction device includes a reference magnetic layer and a magnetic free layer including first and second magnetic elements that are magnetically exchange coupled. The magnetic exchange coupling between the first and second magnetic elements is configured to achieve a switching current distribution less than about 200% and a long term thermal stability criterion of greater than about 60 kT.

Magnetic tunnel junction with free layer having exchange coupled magnetic elements

Method and apparatus for using thermal preconditioning to write data to a non-volatile memory cell. In accordance with some embodiments, a semiconductor memory has an array of non-volatile memory cells, and a control circuit which stores a first write command from a host to write data to said array. A write circuit flows a write current through an unconditioned first selected cell having a first block address associated with the first write command to write the first selected cell to a selected data state, and concurrently passes a thermal preconditioning current through a second selected cell having a second block address associated with the first block address. The write circuit further passes a thermal preconditioning current through a third selected cell having a third block address associated with the second block address in response to receipt by the control circuit of a second write command from the host associated with the second block address.

Predictive thermal preconditioning and timing control for non-volatile memory cells

The present disclosure relates to methods of selectively placing a reference column or reference row in a memory array. The method includes measuring a resistance state resistance value for a plurality of variable resistive memory cells within a memory array and mapping a location of each measured variable resistive memory cell to form a map of the resistance state resistance values for a plurality of variable resistive memory cells within a memory array. Then a column or row is selected to be a reference column or reference row based on the map of the resistance state resistance value for a plurality of variable resistive memory cells within a memory array, to minimize read operation errors, and forming a variable resistive memory cell memory array.

Spatial correlation of reference cells in resistive memory array

A magnetic memory device includes a first electrode separated from a second electrode by a magnetic tunnel junction. The first electrode provides a write current path along a length of the first electrode. The magnetic tunnel junction includes a free magnetic layer having a magnetization orientation that is switchable between a high resistance state magnetization orientation and a low resistance state magnetization orientation. The free magnetic layer is spaced from the first electrode a distance of less than 10 nanometers. A current passing along the write current path generates a magnetic field. The magnetic field switches the free magnetic layer magnetization orientation between a high resistance state magnetization orientation and a low resistance state magnetization orientation.

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Chanhassen, MN, United States of America

Xiaobin Wang