Chinese Academy of Sciences

Xiaobin He

Chao Zhao

Junfeng Li

Yang Wu

Fuqiang Xu

Tao Yang

Jinbiao Liu

Dapeng Chen

Jiang Yan

Junjie Li

Chunlong Li

Qinghua Yang

Lingkuan Meng

Jinjuan Xiang

Kunzhang Lin

Guanglu Chen

Hushan Cui

A method for producing a recombinant adeno-associated virus (rAAV) and a recombinant baculovirus virus, the method including: (1) infecting an insect host packaging cell line with a corresponding recombinant baculovirus integrated with an rAAV genome ITR-GOI (gene of interest flanked by AAV inverted terminal repeats) and an AAV Cap gene or AAV Rep gene; (2) culturing the host packaging cell line infected with the recombinant baculovirus, so as to produce the recombinant adeno-associated virus; and (3) separating and purifying the recombinant adeno-associated virus obtained in (2).

Method of preparing recombinant adeno-associated virus and recombinant baculovirus

A method for producing recombinant adeno-associated virus, the method including: (1) transforming a gene of interest (GOI) into a recombinant baculovirus, where the recombinant baculovirus has a genome integrated with AAV Rep gene, Cap gene, and rAAV genome ITR-GOI that are needed in the production of the rAAV; and where the ITR-GOI is linked to expression cassette of the Cap gene and the Rep gene by a 5' terminal nucleic acid segment or a 3&#x2032; terminal nucleic acid segment; (2) infecting host insect larvae with the recombinant baculovirus prepared in (1), such that the rAAV is produced in vivo in the host insect larvae; and (3) lysing the host insect larvae obtained in (2), and extracting and purifying the rAAV.

Method for preparing recombinant adeno-associated virus

A recombinant baculovirus, including: an adeno-associated virus Rep gene, an adeno-associated virus Cap gene, and an recombinant adeno-associated virus genome ITR-GOI (gene of interest) flanked by rAAV inverted terminal repeats (ITR). The ITR-GOI includes a 5' terminal nucleic acid fragment and a 3&#x2032; terminal nucleic acid fragment. The ITR-GOI is linked to an expression cassette of the Cap gene and an expression cassette of the Rep gene through the 5&#x2032; terminal nucleic acid fragment and the 3&#x2032; terminal nucleic acid fragment, respectively.

Recombinant baculovirus and method for using the same for preparing recombinant adeno-associated virus vector

A method for monolithic integration of a hyperspectral image sensor is provided, which includes: forming a bottom reflecting layer on a surface of the photosensitive region of a CMOS image sensor wafer; forming a transparent cavity layer composed of N step structures on the bottom reflecting layer through area selective atomic layer deposition processes, where N=2, m&#x2265;1 and m is a positive integer; and forming a top reflecting layer on the transparent cavity layer. With the method, non-uniformity accumulation due to etching processes in conventional technology is minimized, and the cavity layer can be made of materials which cannot be etched. Mosaic cavity layers having such repeated structures with different heights can be formed by extending one-dimensional ASALD, such as extending in another dimension and forming repeated regions, which can be applied to snapshot hyperspectral image sensors, for example, pixels, and greatly improving performance thereof.

Method of monolithic integration of hyperspectral image sensor

The invention discloses a novel dry etching method, which comprises the following steps: forming a to-be-etched layer on a semiconductor substrate; forming a masking material on the to-be-etched layer; carrying out dry etching on the masking material and the to-be-etched layer; simultaneously carrying out lateral etching (parallel to the surface of the substrate) of a masking layer and longitudinal etching (vertical to the surface of the substrate) of the to-be-etched layer; and obtaining the inclination angle (the included angle between a slope surface and the surface of the substrate) of the corresponding etched slope surface by accurately controlling the speed ratio. The method can flexibly adjust the inclination angle of the etched slope surface within a large range (0-90 degrees), and especially has advantages in the field of the application with a small inclination angle (smaller than 20 degrees) of the etched slope surface in comparison with a conventional etching method.

Etching method

A method for manufacturing a dummy gate structure. The method may include: forming a dummy gate oxide layer and a dummy gate material layer on a semiconductor substrate sequentially; forming an ONO structure on the dummy gate material layer; forming a top amorphous silicon layer on the ONO structure; forming a patterned photoresist layer on the top amorphous silicon layer; etching the top amorphous silicon layer with the patterned photoresist layer as a mask, the etching being stopped on the ONO structure; etching the ONO structure with the patterned photoresist layer and a remaining portion of the top amorphous silicon layer as a mask, the etching being stopped on the dummy gate material layer; removing the patterned photoresist layer; and etching the dummy gate material layer, the etching being stopped at the dummy gate oxide layer to form a dummy gate structure.

Method for making HKMG dummy gate structure with amorphous/ONO masking structure and procedure

The present invention provides a chemical-mechanical planarization method. The chemical-mechanical planarization method includes: providing a substrate including a gate and source/drain regions on the sides of the gate, the gate and the source/drain regions being overlay by an insulating layer, and the insulating layer including a protruding part above the gate and a recessed part above a surface of the substrate between gates; selectively doping the insulating layer such that only the protruding part is doped; and performing CMP on the substrate after doping, to remove the protruding part and planarize the surface of the substrate. By selectively doping the insulating layer, the method makes only the protruding part of the insulating layer doped, enhancing the corrosive attacks on the material of the protruding part by the slurry in the CMP, and increasing the removal rate of the material of the protruding part by the CMP.

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Beijing, China

Xiaobin He