Xilinx, Inc.

Xiao-Yu Li

Cinti Xiaohua Chen

Glenn O'Rourke

Qi Xiang

Mohsen Hossein Mardi

Joe W Zhao

Myongseob Kim

Zhi-min Ling

Yuezhen Fan

Thao H T Vo

Stephen M Trimberger

Matthew H Klein

Andy H Gan

Eric Thorne

David Mark

Feng Wang

Felino E Pagaduan

Ran Zhou

Shiying Xiong

Examples described herein provide for determining a recipe for identifying from which buckets integrated circuit chips are taken to form units of a multi-chip apparatus. In an example, a method uses a processor-based system and uses a Markov Decision Process. Buckets are defined based on respective characteristics of manufactured chips. Each of the manufactured chips is binned into a respective one of the buckets based on the characteristic of the respective manufactured chip. A recipe for identifying from which of the buckets to take one or more of the manufactured chips to incorporate into respective ones of the units of the multi-chip apparatus is generated.

Markov decision process based recipe generation for multi-chip apparatus

An integrated circuit (IC) chip package assembly apparatus and techniques for assembling IC chip packages are described. For example, a techniques for fabricating an IC package include (A) determining a first package assembly yield (PAY) across a first die pool comprising a first plurality of dies having a performance criteria within a first predefined range; (B) determining a second PAY across a second die pool comprising a second plurality of dies having a performance criteria within a second predefined range of performance criteria that is different than the first predefined range of performance criteria, the second plurality of dies comprising a portion of the first plurality of dies; and (C) generating a final assembly sequence in response to analyzing the first and second PAYs, the final assembly sequence comprising rules for combining dies in accordance with obtaining a higher of the first PAY and the second PAY.

High yield package assembly technique

A method of enabling the use of a programmable device having impaired circuitry includes determining one or more locations of the impaired circuitry of the programmable device; generating a defect map for the programmable device based on the determined locations of the impaired circuitry; generating a plurality of configuration bitstreams to implement a circuit in the programmable device; selecting one of the plurality of configuration bitstreams that does not use the impaired circuitry indicated by the defect map; and programming the programmable device with the selected configuration bitstream.

Increased usable programmable device dice

An apparatus for a stacked silicon interconnect technology (SSIT) product comprises an interposer die, a plurality of integrated circuit dies, a plurality of active components forming an active connection between the integrated circuit dies and the interposer die, and a plurality of dummy components at the interposer die, the dummy components not forming an active connection between the integrated circuit dies and the interposer die. At least a subset of the dummy components forms a pattern, and the pattern comprises an identifier for the interposer die.

Method and apparatus for tracking interposer dies in a silicon stacked interconnect technology (SSIT) product

An apparatus relating generally to an interposer is disclosed. In such an apparatus, the interposer has a plurality of conductors and a plurality of charge attracting structures. The plurality of charge attracting structures are to protect at least one integrated circuit die to be coupled to the interposer to provide a stacked die. The plurality of conductors include a plurality of through-substrate vias.

Charge damage protection on an interposer for a stacked die assembly

A semiconductor package includes an interposer and a plurality of integrated circuit (IC) dice disposed on and intercoupled via the interposer. A first IC die has a clock speed rating that is greater than a clock speed rating of another of the IC dice. A plurality of programmable voltage tuners are coupled to the plurality of IC dice, respectively. A first voltage tuner is coupled to the first IC die, and the first voltage tuner is programmed to reduce a voltage level of voltage input to the first voltage tuner and output the reduced voltage to the first IC die.

Semiconductor package having IC dice and voltage tuners

A method for tracking an interposer die of a stacked silicon interconnect technology (SSIT) product includes forming a plurality of dummy components on the interposer die, and modifying one or more of the plurality of dummy components on the interposer die to form a unique identifier for the interposer die. An apparatus for a stacked silicon interconnect technology (SSIT) product includes an interposer die, and a plurality of dummy components at the interposer die. One or more of the plurality of dummy components is modifiable to form a unique identifier for the interposer die.

An embodiment of an integrated circuit is disclosed. For this embodiment, the integrated circuit includes circuit blocks. At least one transistor of a circuit block of the circuit blocks includes a portion of a semiconductor substrate having a diffusion layer. The circuit block has a relatively high diffusion pattern density as compared with others of the circuit blocks. The diffusion layer has an exposed surface active area constrained responsive to a design rule. The design rule is to limit to a maximum amount the surface active area in order to improve at least one parameter of the at least one transistor selected from a group consisting of an increase in switching speed and a decrease in leakage current of the at least one transistor of the circuit block having the relatively high diffusion pattern density.

Increasing circuit speed and reducing circuit leakage by utilizing a local surface temperature effect

Described are methods and circuits for identifying defective device layers and localizing defects. Production PLD tests extract statistically significant data relating failed interconnect resources to the associated conductive metal layer. Failure data thus collected is then analyzed periodically to identify layer-specific problems. Test circuits in accordance with some embodiments employ interconnect resources heavily weighted in favor of specific conductive layers to provide improved layer-specific failure data. Some such test circuits are designed to identify open defects, while others are designed to identify short defects.

Method and circuits for localizing defective interconnect resources in programmable logic devices

Methods for monitoring and improving the fabrication process of integrated circuits using configurable devices are described. In one aspect, the method includes instantiating a test pattern on one or more configurable devices fabricated using the fabrication process, identifying an underperforming region of the configurable devices, and determining if the underperforming region is layout sensitive. At least one of the fabrication process and the layout of the configurable device can then be adjusted based on the determination. In some embodiments, the configurable device may be a programmable logic device, such as a field programmable logic array.

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Palo Alto, CA, United States of America

Xiao-Yu Li