Applied Materials, Inc.

Xiao Tan

Siew Kit Hoi

Yaoying Zhong

Jay Min Soh

Li Ying Choo

Haomin Xu

Palaniappan Chidambaram

Jaysen Chiam

A method for depositing a film layer on a substrate incorporates ion flux control to alter sputtering atom trajectories. A method may include flowing argon gas around a periphery of the substrate with a surface of the substrate having a plurality of structures with sidewalls and an edge region containing edge structures near the periphery of the substrate, forming a plasma to ionize the argon gas to form Ar+ ion flux to induce sputtering of aluminum to generate aluminum atoms for deposition on the substrate, generating an AC bias on the substrate to increase the Ar+ ion flux density at the edge region of the substrate to alter aluminum atom trajectories striking the edge region, and heating the substrate to increase mobility of the aluminum atoms deposited on the edge structures.

Methods for depositing film layers

Methods and apparatus for processing a substrate in a process chamber include: positioning a substrate on a substrate support in a process volume so that the substrate is opposite a sputter target comprising indium tin oxide; flowing a plasma-forming gas into the process volume; and sputtering the indium tin oxide onto the substrate while applying AC bias to the substrate.

Methods and apparatus for depositing amorphous indium tin oxide film

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Singapore, Singapore

Xiao Tan