Boe Technology Group Co., Ltd.

Cambricon Technologies Corporation Limited

International Business Machines Corporation

Microsoft Technology Licensing, LLC

Beijing Boe Vision-electronic Technology Co., Ltd.

Xiaomi Inc.

Beihang University

K-tronics (suzhou) Technology Co., Ltd.

Cambricon (xi'an) Semiconductor Co., Ltd.

Schlumberger Technology Corporation

Beijing Boe Display Technology Co., Ltd.

Beijing Baidu Netcom Science and Technology Co., Ltd.

Beijing Goldwind Science & Creation Windpower Equipment Co., Ltd.

Sinocelltech Ltd.

Beijing Institute of Fashion Technology

Xiao Lin Zhang

Xin Gu

Shaoli Liu

Tianshi Chen

Yunji Chen

Kang Guo

Xitong Ma

Lijie Zhang

Fan Yang

Guo Qiang Li

Guangcai Yuan

Zhen Liu

Cheng Fang Wang

Si Bin Fan

Lihua Geng

Pengxia Liang

Junaid Ahmed

Shuhuan Yu

Mengya Song

Jun Gao

Walter Sun

Duohui Li

Wen Bing Li

Chao Li

Peng Cheng

Ce Ning

Yan Ren

Tianyue Zhao

Enhui Guan

Peter Bailey

Xiaochen Ma

Yan Feng

Nikhil Dandekar

Daofu Liu

Sasi Parthasarathy

Yanhui Lu

Xin Chen

Xue Dong

Zhanfeng Cao

Feng Qu

Yan Wang

Zifeng Wang

Tao Li

Rui Wang

Fei Wang

Enxing Hou

Michael John Williams

Lei Cao

Xinshe Yin

Hua Yin Huang

Ran Duan

Jing Chang Huang

Haixu Li

Zhengliang Li

Wei Xu

Zhen Li

Jian He

Hong Yu Chen

Pengfei Zhang

Zhiguo Zhang

Jin Wang

Yanfu Li

Xue Yong Zhang

Ke Wang

Jiahui Han

Changlin Leng

Jie Qiu

Xingsheng Lin

Nannan Hu

She Lin

Xuan Liang

Xinxin Mu

Yun Ma

Xianzhen Li

Wenbin Wang

Jiayu He

Jin Zhao

Ting Liu

Youxiang Xia

Shijin Zhang

Junwei Yan

Dong Han

Ran Wang

Xiaodong Shi

Hailan Jin

Mingxing Wang

Jianmin He

Lidong Zhao

Lu Tong

Shulei Li

Wei Tan

Zhimao Wang

Liangzhi Xie

Pengpeng Feng

Xiaomin Li

Haiwang Li

Tiantong Xu

Yue Huang

Yushun Jie

A light-emitting diode substrate, a manufacturing method thereof, and a display device are disclosed. The manufacturing method of the light-emitting diode substrate includes: forming an epitaxial layer group of M light-emitting diode chips on a substrate; transferring N epitaxial layer groups on N substrates onto a transition carrier substrate, the N epitaxial layer groups on the N substrates being densely arranged on the transition carrier substrate; and transferring at least part of N*M light-emitting diode chips corresponding to the N epitaxial layer groups on the transition carrier substrate onto a driving substrate, an area of the transition carrier substrate is greater than or equal to a sum of areas of the N substrates, M is a positive integer greater than or equal to 2, and N is a positive integer greater than or equal to 2.

Light-emitting diode substrate and manufacturing method thereof, display device

Wire grid polarizer and manufacturing method thereof are provided, the wire grid polarizer includes: substrate; first wire grid formed on substrate, including first wire grid reflection strips arranged parallel to each other and at equal intervals; second wire grid formed at a side of first wire grid away from substrate, including second wire grid reflection strips arranged in parallel to each other and at equal intervals; second wire grid reflection strips are in one-to-one correspondence with first wire grid reflection strips; orthographic projections of second wire grid reflection strip onto substrate falls within orthographic projections of corresponding first wire grid reflection strip onto substrate; wire width of second wire grid reflection strip is less than that of first wire grid reflection strip; and wire spacing of second wire grid reflection strip is greater than that of the first wire grid reflection strip.

Wire grid polarizer and fabrication method therefor

A microfluidic channel backplane includes a base, and a plurality of microfluidic channels, a sample-adding channel and an enrichment channel that are disposed above the base. Each microfluidic channel of the plurality of microfluidic channels includes a first end and a second end. The sample-adding channel is communicated with first ends of the plurality of microfluidic channels. The enrichment channel includes a first enrichment sub-channel and a second enrichment sub-channel. The first enrichment sub-channel is communicated with second ends of the plurality of microfluidic channels, and one end of the second enrichment sub-channel is communicated with the first enrichment sub-channel.

Microfluidic channel backplane and method of manufacturing the same, and microfluidic detection chip

Disclosed are a display panel, a manufacturing method thereof, and a displaying device. The display panel comprises a pixel layer, a support layer, a lens unit and a cover plate which are stacked in sequence. The support layer is located on a luminescent layer of the pixel layer. The lens unit comprises a lens layer, wherein the lens layer comprises a lens area and a non-lens area, and the lens area comprises multiple lenses arranged in an array. The display panel further comprises a polarization unit disposed on a light path between the pixel layer and the lens layer and configured to filter out light emitted from the pixel layer to the non-lens area.

Display panel, manufacturing method thereof, and displaying device

Methods and apparatuses for enhancing accessibility of a target application which is for processing topology diagrams are provided. An indication of selecting a target element in a topology diagram may be received. Connection status of the target element may be determined based on topology information of the topology diagram. Connection information of the target element corresponding to the connection status of the target element may be generated. Description information of the target element may be provided to an accessibility assistant application, the description information of the target element at least comprising the connection information of the target element.

Enhancing accessibility of topology diagram-related applications

A method for manufacturing a nano pattern, includes: forming a pattern transfer layer on a base substrate having N imprint regions, and performing patterning processes on the pattern transfer layer to form an imprint pattern layer. A portion of the imprint pattern layer located in each imprint region is an imprint pattern, N imprint patterns are formed sequentially. Forming an i-th imprint pattern in an i-th imprint region includes: performing a patterning process on a portion of the pattern transfer layer located in the i-th imprint region to form the i-th imprint pattern; forming an i-th protective film on a side of the pattern transfer layer away from the base substrate; and removing at least a portion of the i-th protective film located in an (i+1)-th imprint region to obtain an i-th protective layer and expose a portion of the pattern transfer layer located in the (i+1)-th imprint region.

Nano pattern manufacturing method, nanoimprint substrate, and display substrate

The present invention belongs to the field of tumor immunotherapy, and relates to a humanized monoclonal antibody that binds to VEGF. The present invention discloses nucleic acid sequences (including heavy/light chain variable regions) encoding said antibodies, and vectors, pharmaceutical compositions and kits containing said nucleic acid sequences. The antibody disclosed in the present invention can specifically bind to VEGF with high affinity and block the binding of VEGF to the receptor VEGFR2. Said antibodies also neutralize the proliferative effect of VEGF165 protein and multiple VEGF subtypes on HUVEC cells and can be used in clinical treatment of tumors, including but not limited to: colorectal cancer.

Humanized anti-VEGF monoclonal antibody

A light panel, includes: a printed circuit board (PCB); a light emitting element array, comprising a plurality of light emitting elements disposed on a first surface of the PCB and arranged in an array in a first direction and in a second direction; and a driving chip, disposed on a second surface of the PCB, which is opposite to the first surface; wherein the light-emitting element array comprises a light-emitting element sub-array, and orthographic projections of at least portion of light-emitting elements of the light-emitting element sub-array on the PCB are located outside an orthographic projection of the driving chip on the PCB. A display device is further provided.

Light panel and display device

A communication configuration apparatus for constructing a communication topology structure based on a plurality of processing nodes may be included in a combined processing apparatus. The combined processing apparatus further includes an interconnection interface and other processing apparatus. The communication configuration apparatus interacts with other processing apparatus to jointly complete a computing operation specified by a user. The combined processing apparatus further includes a storage apparatus. The storage apparatus is connected to the communication configuration apparatus and other processing apparatuses, respectively. The storage apparatus is used for storing data of the communication configuration apparatus and other processing apparatus. A technical solution of the present disclosure may improve efficiency of inter-chip communication.

Method and device for constructing communication topology structure on basis of multiple processing nodes

Provided are a display substrate, a display apparatus and a display method therefor. The display substrate includes: a base substrate; pixel units on the base substrate; and an electrochromic structure on a side of the pixel units that is away from the base substrate. The transmittance of the electrochromic structure is positively correlated with the brightness of the pixel units when displaying an image, such that the contrast of the display substrate is improved, and the display effect is improved.

Display substrate having electrochromic structure with changeable transmittance, display apparatus and display method therefor

A micro-nano channel structure, a method for manufacturing the micro-nano channel structure, a sensor, a method for manufacturing the sensor, and a microfluidic device are provided by the embodiments of the present disclosure. The micro-nano channel structure includes: a base substrate; a base layer, on the base substrate and including a plurality of protrusions; and a channel wall layer, on a side of the plurality of the protrusions away from the base substrate, and the channel wall layer has a micro-nano channel; a recessed portion is provided between adjacent protrusions of the plurality of the protrusions, and an orthographic projection of the micro-nano channel on the base substrate is located within an orthographic projection of the recessed portion on the base substrate.

Micro-nano channel structure, sensor and manufacturing method thereof, and microfluidic device

The present disclosure provides a method and device of transmitting a video signal, a method and device of receiving a video signal, and a display device. The method of transmitting the video signal includes: acquiring the video signal, wherein the video signal contains a plurality of frame data; embedding configuration data for at least one frame data of the video signal in a previous invalid interval of the at least one frame data; and transmitting the video signal embedded with the configuration data.

Method and device of transmitting video signal, method and device of receiving video signal, and display device

A touch display system and a control method thereof are provided. The touch display system includes a touch display panel and a controller. The touch display panel includes a touch area and is configured to sense a touch operation of a user. The controller is coupled with the touch display panel and is configured to acquire a physical sign information of the user who is to operate the touch display panel, and adjust a touch range for the user to perform the touch operation in the touch area according to the physical sign information of the user.

Touch display system and control method thereof

Provided are a pressure difference sensor, and a manufacturing method and an application thereof. A manner of bonding three layers of wafers is adopted, and the sensor includes an upper structure, an intermediate structure and a lower structure. Each of the upper structure and the intermediate structure is manufactured by a silicon-on-insulator (SOI) wafer, the lower structure is manufactured by patterned doped intrinsic silicon; and a lead pad of each of the upper electrode, and the intermediate electrode and the lower electrode is located on a corresponding one of three-stepped steps at a side of the pressure difference sensor. Annular through holes are formed around the upper electrode and the lower electrode. A constant capacitance of a capacitance signal outputted by an upper capacitor of the sensor by extending an electric field line path of the constant capacitor part.

Capacitive pressure difference sensor with improved bonding and manufacturing method

A computing device and related products are provided. The computing device is configured to perform machine learning calculations. The computing device includes an operation unit, a controller unit, and a storage unit. The storage unit includes a data input/output (I/O) unit, a register, and a cache. Technical solution provided by the present disclosure has advantages of fast calculation speed and energy saving.

Vector and matrix computing device

Growing community of inventors

Beijing, China

Xiao Lin Zhang