Tianjin Sanan Optoelectronics Co., Ltd.

Xiao-Feng Liu

Du-Xiang Wang

Li-Ming Shu

Ming-Ying Liu

Liang-Jun Wang

Dong-Yan Zhang

A LED fabrication method includes: providing a substrate; forming a low-temperature AlGaN (0&#x2266;x&#x2266;1) layer over the growth substrate; setting the growth pressure from high to low and temperature and rotation rate from low to high to realize change from three-dimensional growth to two-dimensional growth of the GaN structure layer before growth of the multiple quantum-well layer, in which, Si is doped at position approximate to the multiple quantum-well layer to form an undoped gradient GaN layer and an N-type gradient GaN layer; growing a multiple quantum-well layer, an AlGaN (0&#x2266;x&#x2266;1) layer and a P-type layer; and during later chip fabrication, dividing the epitaxial wafer over the etched N-type platform into chip grains and immersing them in chemical solutions for wet etching; and forming an inverted pyramid structure with rough side wall over the multiple quantum-well layer to improve light-emitting efficiency.

Growing community of inventors

Tianjin, China

Xiao-Feng Liu