Chinese Academy of Sciences

Tsinghua University

Cnpc USA Corporation

China National Petroleum Corporation

Beijing Huamei Inc.

Xiao Feng

Xi Chen

Ke He

Qi-Kun Xue

Li-Li Wang

Xu-Cun Ma

Cui-Zu Chang

Lin Zhao

Shuquan Sun

Jin-Feng Jia

Aimin Du

Yao-Yi Li

Jing Wang

Qingyun Di

Qiong Li

Li Lv

Heng Tang

Ya-Yu Wang

Cuihong Li

Zhi Hong Li

Zhi Li

Chris X Cheng

Xiongwen Yang

Ying Zhang

Qi Peng

Kaixin Yuan

Aiming Du

Kai Zhang

The present invention pertains to the technical field of aeromagnetic survey, and specifically pertains to a storage device for a data analyzer for aerospace magnetic field measurement, which comprises a storage box body, a moving structure for facilitating movement is connected to the storage box body, a shielding structure for shielding sunlight is connected to the storage box body, an accommodating structure for accommodating an article is connected to the storage box body, a support structure for supporting is connected to the accommodating structure, and a placing structure for placing is connected to the storage box body.

Storage device for data analyzer for aerospace magnetic field measurement

A superabrasive compact and a method of making the superabrasive compact are disclosed. A superabrasive compact may comprise a diamond table and a substrate. The diamond table may be attached to the substrate. The diamond table may include bonded diamond grains defining interstitial channels. The interstitial channels may be filled with non-catalytic binder materials in some regions. The interstitial channels in some other regions may be filled with a catalytic materials from the substrate.

Unique PDC microstructure and the method of making it

An offset data acquisition method and device of a fluxgate magnetometer are provided by the present disclosure, wherein the offset data acquisition method of the fluxgate magnetometer comprises: controlling the first analog switch, the second analog switch and the third analog switch to change directions within a preset period to obtain eight switch direction combinations between the first analog switch, the second analog switch and the third analog switch; acquiring magnetic field measurement data corresponding to an each of the switch direction combinations; and the magnetic field measurement data comprises x-axis magnetic field measurement data, y-axis magnetic field measurement data and z-axis magnetic field measurement data; and acquiring the offset data based on influence factors of an offset and the magnetic field measurement data within the preset period.

Method and device for eliminating offset of fluxgate magnetometer

An electronic magnetometer and a method for measuring a magnetic field are provided. A Gunn diode with magnetic shielding and a Gunn diode without magnetic shielding generate different induced high-frequency oscillating currents in various environments. The high-frequency oscillating current of the Gunn diode with magnetic shielding and the high-frequency oscillating current of the Gunn diode without magnetic shielding are processed by circuits and subsequently compared. The difference of frequencies in the two currents is proportional to the magnitude of magnetic field, and the magnitude of magnetic field is obtained.

Electronic magnetometer and method for measuring magnetic field

A magnetic field based micro-vibration measurement device and a measuring therefore are provided, which are applied in a micro-vibration measurement technical field. Fluxgate sensors and a control processing circuit are included. Each of the fluxgate sensors is disposed with an excitation coil and an induction coil that are mutually corresponding; the control processing circuit includes: an excitation signal generating module, a frequency-selective amplifying module, a phase-sensitive rectifying module, a smooth filtering module an ambient magnetic field acquisition module, and a vibration data statistics module. Excitation coils generate excitation magnetic field signals according to the excitation signal sent from the excitation signal generating module the induction coils are for generating induced current signals according to the receive excitation magnetic field signal and the ambient magnetic field signal. Induced current signals are calculated to obtain ambient magnetic field data after sequentially undergoing selective amplification, rectification and smooth filtering.

Magnetic field based micro-vibration measurement device and measuring method thereof

A method for forming a topological insulator structure is provided. A strontium titanate substrate having a surface (111) is used. The surface (111) of the strontium titanate substrate is cleaned by heat-treating the strontium titanate substrate in the molecular beam epitaxy chamber. The strontium titanate substrate is heated and Bi beam, Sb beam, Cr beam, and Te beam are formed in the molecular beam epitaxy chamber in a controlled ratio achieved by controlling flow rates of the Bi beam, Sb beam, Cr beam, and Te beam. The magnetically doped topological insulator quantum well film is formed on the surface (111) of the strontium titanate substrate. The amount of the hole type charge carriers introduced by the doping with Cr is substantially equal to the amount of the electron type charge carriers introduced by the doping with Bi.

Method for making topological insulator structure

A method for generating quantum anomalous Hall effect is provided. A topological insulator quantum well film in 3QL to 5QL is formed on an insulating substrate. The topological insulator quantum well film is doped with a first element and a second element to form the magnetically doped topological insulator quantum well film. The doping of the first element and the second element respectively introduce hole type charge carriers and electron type charge carriers in the magnetically doped topological insulator quantum well film, to decrease the carrier density of the magnetically doped topological insulator quantum well film to be smaller than or equal to 1&#xd7;10cm. One of the first element and the second element magnetically dopes the topological insulator quantum well film. An electric field is applied to the magnetically doped topological insulator quantum well film to decrease the carrier density.

Method for generating quantized anomalous hall effect

An electrical device includes an insulating substrate and a magnetically doped TI quantum well film. The insulating substrate includes a first surface and a second surface. The magnetically doped topological insulator quantum well film is located on the first surface of the insulating substrate. A material of the magnetically doped topological insulator quantum well film is represented by a chemical formula of Cr(BiSb)Te, wherein 0&#x3c;x&#x3c;1, 0&#x3c;y&#x3c;2, and values of x and y satisfies that an amount of a hole type charge carriers introduced by a doping with Cr is substantially equal to an amount of an electron type charge carriers introduced by a doping with Bi, the magnetically doped topological insulator quantum well film is in 3 QL thickness to 5 QL thickness.

Electrical device having magnetically doped topological insulator quantum well film

A topological insulator structure includes an insulating substrate and a magnetically doped TI quantum well film located on the insulating substrate. A material of the magnetically doped TI quantum well film is represented by a chemical formula of Cr(BiSb)Te. 0.05&#x3c;x&#x3c;0.3, 0&#x3c;y&#x3c;0.3, and 1:2&#x3c;x:y&#x3c;2:1. The magnetically doped TI quantum well film is in 3 QL to 5 QL.

A topological insulator structure includes an insulating substrate and a magnetically doped TI quantum well film located on the insulating substrate. A material of the magnetically doped TI quantum well film is represented by a chemical formula of Cr(BiSb)Te. 0&#x3c;x&#x3c;1, 0&#x3c;y&#x3c;2. Values of x and y satisfies that an amount of a hole type charge carriers introduced by a doping with Cr is substantially equal to an amount of an electron type charge carriers introduced by a doping with Bi. The magnetically doped TI quantum well film is in 3 QL to 5 QL.

Topological insulator structure having magnetically doped topological insulator quantum well film

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Xiao Feng