Innolight Technology (suzhou) Ltd.

Xianyao Li

Dongdong Yan

Mengxi Ji

Yuzhou Sun

Yue Xiao

Chih-Kuo Tseng

Defen Guo

Tianhua Lin

A traveling wave electrode modulator and a photonic integrated chip including the same. The traveling wave electrode modulator comprises a silicon base, an optical waveguide and a doped transitional area disposed in the silicon base, and a traveling wave electrode structure electrically connected to the transitional area. The traveling wave electrode structure comprises at least one layer of a continuous electrode continuously extending along the direction of extension of the optical waveguide, at least one layer of a periodic electrode periodically disposed along the direction of extension of the optical waveguide, and a conductive structure. The continuous electrode is electrically connected to the periodic electrode via the conductive structure, and the traveling wave electrode structure is electrically connected to the transitional area via the conductive structure.

Traveling wave electrode modulator and photonic integrated chip

A wavelength division multiplexer/demultiplexer, a photonic integrated chip, and an optical module are provided. The wavelength division multiplexer/demultiplexer includes a substrate, a bus waveguide provided on the substrate, and at least two wavelength division multiplexing/demultiplexing units provided on the bus waveguide. Each of the at least two wavelength division multiplexing/demultiplexing units includes a mode multiplexer and an asymmetric Bragg grating. The mode multiplexer includes a first port, a second port, and a third port. The third port is connected to the asymmetric Bragg grating, so as to input a light in a TE1 mode or a higher-order mode to the asymmetric Bragg grating. The asymmetric Bragg grating transmits light containing wavelengths other than a wavelength λi. A grating period of the asymmetric Bragg grating and the wavelength λi satisfy a resonance condition.

Wavelength division multiplexer/demultiplexer, photonic integrated chip, and optical module

A hybrid integrated optoelectronic chip including an optoelectronic chip and a silicon photonic chip, a material of the optoelectronic chip being different from a material of the silicon photonic chip. The optoelectronic chip includes at least one first waveguide. The silicon photonic chip includes at least one second waveguide and an installation recess. The optoelectronic chip is installed in the installation recess, and the first waveguide is optically connected to the second waveguide.

Hybrid integrated optoelectronic chip and method of manufacturing the same

An electro-optic modulator includes a base plate, an optical waveguide, at least one set of modulation electrodes, and an electromagnetic shielding structure. The electromagnetic shielding structure includes a top shielding member covering the set of modulation electrodes from above, and a side shielding member disposed on two sides of the set of modulation electrodes. At least a portion of the side shielding member extends into the base plate to isolate the set of modulation electrodes.

Electro-optic modulator

A silicon-based electro-optic modulator includes a substrate layer, an insulation layer, and an optical waveguide layer stacked sequentially, traveling wave electrodes disposed above the optical waveguide layer, and a metal grating structure periodically configured along the direction in which an electrical signal propagates in the traveling wave electrodes. The metal grating structure is disposed above the optical waveguide layer.

Silicon-based electro-optic modulator

A waveguide photoelectric detector, comprising: a substrate comprising a silicon layer, the silicon layer having a silicon waveguide formed thereon; an active layer dispose on the silicon waveguide, the active layer having a first doped region formed thereon; a horizontal PIN junction formed at an area of the silicon layer below the active layer, the horizontal PIN junction comprising a second doped region, an intrinsic region, and a third doped region. A doping type of the second doped region is the same as that of the first doped region. One end of the second doped region near the intrinsic region is connected to the first doped region. The third doped region and the first doped region form a vertical PIN junction.

Waveguide photoelectric detector

An electro-optic modulator includes a doped structure disposed on a top silicon layer of a substrate. The doped structure includes an optical waveguide, and a first P-type doped region and a first N-type doped region disposed respectively on two sides of the optical waveguide. The first P-type doped region is connected to the optical waveguide by means of a plurality of P-type doped link arms, and the first N-type doped region is connected to the optical waveguide by means of a plurality of N-type doped link arms. End portions of the plurality of P-type doped link arms and end portions of the plurality of N-type doped link arms are alternately arranged along a direction of light propagation to form PN junction depletion layers. The PN junction depletion layers are periodically arranged along the direction of light propagation to form the optical waveguide.

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Jiangsu, China

Xianyao Li