Shenzhen China Star Optoelectronics Technology Co., Ltd.

Xianwang Wei

Yang Liu

A TFT substrate and a manufacturing method thereof are provided. In the manufacturing method, a metal oxide semiconductor layer is irradiated with UV light by using a gate as a shielding layer, such that a portion of the metal oxide semiconductor layer irradiated by the UV light is conductorized to form a source, a drain, and a pixel electrode, and a portion of the metal oxide semiconductor layer shielded by the gate still retains semiconductor properties to form a semiconductor channel. The invention achieves the alignment of the source and the drain with the gate by processes of self-alignment of the gate and conductorization of the metal oxide semiconductor layer, and can effectively control an overlapping region of the source and drain and the gate. Thereby, the parasitic capacitance is reduced, and the display quality is improved. Also, the manufacturing method is simple, and the production efficiency is improved.

Manufacturing method of TFT substrate

An array substrate includes a substrate and a gate electrode, a gate insulating layer, a channel layer, an insulating layer, and a passivation layer sequentially formed on the surface of the substrate. An oxide semiconductor layer that forms a channel layer and a plurality of first IPS electrodes that are spaced from the oxide semiconductor layer are provided on the gate insulating layer. The insulating layer covers the oxide semiconductor layer and the plurality of first IPS electrodes. The passivation layer covers the channel layer and is formed with trenches. The trenches are located on a side of each of the first IPS electrode and extending to the gate insulation layer. Second IPS electrodes are formed on the passivation layer and corresponding to the first IPS electrodes and are connected to the first IPS electrodes.

Fabricating method of array substrate, array substrate and liquid crystal display panel

The present application discloses an array substrate and its fabricating method thereof, the array substrate including a substrate, a gate electrode, a gate insulating layer, a channel layer, an insulating layer, and a passivation layer sequentially formed on the surface of the substrate; an oxide semiconductor layer constituting the channel layer and a plurality of first IPS electrodes spaced apart from the oxide semiconductor layer is further provided on the gate insulating layer; the insulating layer covers the oxide semiconductor layer and the oxide semiconductor layer and the plurality of first IPS electrodes; the passivation layer covers the channel layer and formed with trenches, the trenches located on a side of each of the first IPS electrode and extending to the gate insulation layer; a second IPS electrodes corresponding to the first IPS electrodes and connected to the first IPS electrodes are formed on the passivation layer.

Growing community of inventors

Guangdong, China

Xianwang Wei