Anhui University

Xianliang Wu

Zhixiang Huang

Xingang Ren

Kaikun Niu

Lixia Yang

Yingsong Li

Gang Wang

Guanghui Xu

Siliang Wang

Guoda Xie

Qian Chen

Aidi Ren

Sixian Qian

Jie Wu

Minquan Li

Chao Wang

Dawei Ding

Shengyang Wei

Huping Ju

Wei Zhi

Sungen Cao

Guoxing Sun

Shuyang An

Yali Zhao

Yi Li

Jiayu Rao

Yong Peng

The present disclosure belongs to the technical field of OAM antennas, and provides a frequency re-configurable OAM antenna in S band and a frequency reconfiguration method. The OAM antenna includes a lower dielectric substrate and multiple array units. Each array unit includes a metal patch, an upper dielectric substrate, an outer loop, an inner loop, a coaxial feeder, four metal probes, and four diodes. In the present disclosure, bias states of all the diodes of each array unit are controlled by applying a voltage; when all the diodes are in forward bias states, the antenna works at a high frequency; and when all the diodes are in reverse bias states, the antenna works at a low frequency. The frequency re-configurable OAM antenna in S band in the present disclosure has features of frequency reconfiguration and two OAM radiation modes, and has a stable gain over a broadband.

Frequency re-configurable orbital angular momentum (OAM) antenna with in S band and frequency reconfiguration method

An ultra-wideband electromagnetic band gap (EBG) structure includes multiple EBG units in an array. Each EBG unit includes a power plane, a dielectric substrate and a ground plane from top to bottom. The power plane includes a patch, a coupled complementary split ring resonator (C-CSRR) and a plurality of semi-improved Z-bridge structures. Each edge of the patch is provided with a semi-improved Z-bridge structure. The C-CSRR is provided within a ring formed by the semi-improved Z-bridge structures. The Z-bridge structure includes a first horizontal branch, a first vertical branch, a second horizontal branch and a second vertical branch connected in sequence. The second vertical branch is connected to the patch. First horizontal branches of adjacent EBG units are connected to each other. A circuit board including the aforementioned EBG structure is also provided.

Ultra-wideband electromagnetic band gap (EBG) structure and circuit board

Bidirectional circularly polarized antenna element and bidirectional circularly polarized array antenna are provided, and comprising a dielectric substrate, a feeder, a radiation patch, a first plane, a second plane, a first coupling assembly and a second coupling assembly which are embedded in the surface of the dielectric substrate. The first plane and the second plane of the antenna element are kept at different heights, and compared with the solution that two planes at the same height can only generate linear polarization radiation in the prior art, the circular polarization radiation can be generated, which solves the problem of linear polarization mismatch. Furthermore, two coupling assemblies are introduced into two sides of the radiation patch to enable the coupling effect with the radiation patch, such that the frequency bandwidth of the circularly polarized antenna can be greatly improved without increasing the size of the antenna.

Bidirectional circularly polarized antenna element and bidirectional circularly polarized array antenna

A silicon-on-insulator metal-oxide-semiconductor field-effect transistor (SOI MOSFET) structure is provided, including a substrate layer; a buried oxide layer which is arranged on an upper surface of the substrate layer and is made of SiO; an active zone which is arranged on an upper surface of the buried oxide layer; a source electrode and a drain electrode which are arranged on an upper surface of the active zone; a gate dielectric layer which is arranged between the source electrode and the drain electrode; a gate electrode which is provided in the gate dielectric layer; and a heat conduction column which penetrates through the buried oxide layer, and its top wall is in contact with the active zone. The heat conduction column dissipates heat in the active zone, resulting in a lattice temperature of the active zone will not increase extremely and avoiding a decrease of a current of the drain electrode.

Silicon-on-insulator metal-oxide-semiconductor field-effect transistor (SOI MOSFET) structure

The present disclosure provides a 5th generation (5G) broadband dual-polarized base station antenna of a multimode resonance structure, including: a first resonance structure, a main radiating unit, a feed balun set, and a metal reflecting plate, where the feed balun set is disposed on the metal reflecting plate, the main radiating unit is disposed on a first feed balun and a second feed balun, and the first resonance structure is disposed on the main radiating unit; the main radiating unit includes a second resonance structure and a third resonance structure, the first resonance structure is configured to control a resonance point at a high frequency, and the third resonance structure is configured to control a resonance point at a low frequency; and the feed balun set is configured to provide a balance current for the main radiating unit and the first resonance structure.

5G broadband dual-polarized base station antenna of multimode resonance structure

Growing community of inventors

Hefei, China

Xianliang Wu