University of Science and Technology Beijing

Xiankun Zhang

Zheng Zhang

Yue Hua Zhang

Li Juan Gao

Chao Chen

He Jiang

Yue Zhang

Mengting Huang

Wenhui Tang

Xiaoyu He

Yihe Liu

Xiaofu Wei

Kuanglei Chen

Ruishan Li

Huihui Yu

Yu Geng

A preparation method and a use of 2D MoSmaterials are provided. Molybdenum source and sulfur powder are used as raw materials, and inert gas is used as carrier gas. Through an intermediate evaporation process, the raw materials are transported to the molten glass surface and deposited into solid molybdenum sulfide. In the subsequent etching-spreading-sulfurization-precipitation process, ultra-high quality and ultra-large area MoSsingle-crystal domains are obtained under normal pressure and without hydrogenation. The single-crystal domain size of the prepared 2D MoSmaterial can reach 1.5 cm, and then grow into a wafer-level 2D MoSmaterial with a size of 2 inches and a thickness of 1-2 layers.

Preparation method and use of two-dimensional MoS2 materials

Disclosed is a metal-semiconductor contact structure based on two-dimensional (2D) semimetal electrodes, including a semiconductor module and a metal electrode module, where the semiconductor module is a 2D semiconductor material, and the metal electrode module is a 2D semimetal material with no dangling bonds on its surface; the 2D semiconductor material and the 2D semimetal material are interfaced with a Van der Waals interface with a surface roughness of 0.01-1 nanometer (nm) and no dangling bonds on the surface, the 2D semiconductor material and the 2D semimetal material are spaced less than 1 nm apart.

Metal-semiconductor contact structure based on two-dimensional semimetal electrodes

Growing community of inventors

Beijing, China

Xiankun Zhang