Freescale Semiconductor,inc.

Xiangzheng Bo

Venkat Kolagunta

Da Zhang

Paul Grudowski

Konstantin V Loiko

Kurt H Junker

Tien Ying Luo

A method for forming a semiconductor device on a semiconductor material layer includes forming a gate structure over the semiconductor material layer. The method further includes forming a first nitride spacer adjacent to the gate structure and forming source/drain extensions in the semiconductor material layer. The method further includes forming an oxide liner overlying the gate structure and the source/drain extensions. The method further includes forming a second nitride spacer adjacent to the oxide liner. The method further includes forming source/drain regions in the semiconductor material layer. The method further includes using an etching process that is selective to the oxide liner, removing the second nitride spacer. The method further includes using an etching process that is selective to the first nitride spacer, at least partially removing the oxide liner. The method further includes forming silicide regions overlying the source/drain regions and the gate structure.

Method for making a transistor with a stressor

A method for forming a semiconductor device includes providing a substrate and forming a p-channel device and an n-channel device, each of the p-channel device and the n-channel device comprising a source, a drain, and a gate, the p-channel device having a first sidewall spacer and the n-channel device having a second sidewall spacer. The method further includes forming a liner and forming a tensile stressor layer over the liner and removing a portion of the tensile stressor layer from a region overlying the p-channel device. The method further includes transferring a stress characteristic of an overlying portion of a remaining portion of the tensile stressor layer to a channel of the n-channel device. The method further includes using the remaining portion of the tensile stressor layer as a hard mask, forming a first recess and a second recess adjacent the gate of the p-channel device.

Method of making a semiconductor device using a stressor

A semiconductor device has at least two tensile stressor layers that are cured with UV radiation. A second tensile stressor layer is formed after a first stressor layer. In some examples, the tensile stressor layers include silicon nitride and hydrogen. In some examples, the second tensile stressor layer has a greater shrinkage percentage due to the curing than the first tensile stressor layer. In one form, the second tensile stressor layer after the curing exerts a greater tensile stress than the first tensile stressor layer. The tensile stressors layers are utilized to improve carrier mobility in an N-channel transistor and thus enhance transistor performance. In one form a single group of overlying tensile stressor layers is provided with each layer being increasingly thicker and having increasingly more hydrogen prior to being cured. In other embodiments multiple overlying groups are formed, each group having a similar repeating depth and hydrogen profile.

Growing community of inventors

Austin, TX, United States of America

Xiangzheng Bo