Sk Hynix Memory Solutions Inc.

Skhynix Inc.

Micron Technology Incorporated

Western Digital Technologies, Inc.

Xiangyu Tang

Lingqi Zeng

Jason Bellorado

Frederick K H Lee

Arunkumar Subramanian

Yu Kou

Zheng Wu

Sundararajan Sankaranarayanan

Eric N Lee

David Scott Ebsen

Mikhail Palityka

Oleg Kragel

Ying Huang

Ameen Aslam

Kishore Kumar Muchherla

Fan Zhang

Huai-Yuan Tseng

Yingquan Wu

Akira Goda

Luigi Pilolli

Daniel J Hubbard

Ali Feiz Zarrin Ghalam

Roberto Izzi

Dustin James Carter

Vijay Sivasankaran

Chulbum Kim

Tyler L Betz

Massimo Zucchinali

Gong Luo

Christopher S Tsang

Yunhsiang Hsueh

Haibo Li

A method includes receiving first data, determining a number of programming operations performed on a plurality of flash memory cells subsequent to a most recent erase operation performed on the plurality of flash memory cells, encoding the first data to provide a first write-once memory (WOM) encoded data, and storing the first WOM encoded data, based at least in part on the determined number of programming operations, within a number of the plurality of flash memory cells.

Write-once memory encoded data

A subset of blocks from a set of blocks of a memory device are identified based on a valid data count constraint. A first block from the subset of blocks is selected based on a valid data count of the first block. A second block from the subset of blocks is selected based on a data temperature of the second block. A comparison of the first block and the second block is performed in accordance with one or more comparison criterion. The first block or the second block is selected as a garbage collection source block based on the comparison. Garbage collection is performed at the garbage collection source block.

Controlling variation of valid data counts in garbage collection source blocks

Operations include establishing a queue storing a list of data burst commands to be communicated via a multiplexed interface coupled to the set of memory dies, communicating, during a first time period, a first data burst command in the queue to a first memory die of the set of memory dies via the multiplexed interface, and communicating, during a second time period, a second data burst command in the queue to a second memory die of the set of memory dies via the multiplexed interface, where a first latency associated with the first data burst command occurs during the second time period.

Data burst queue management

A memory sub-system includes a memory sub-system controller comprising a plurality of controller channels, one or more memory devices, each of which comprises a respective plurality of memory dies, and a channel switch circuit coupled between the plurality of the controller channels and a plurality of memory channels of the one or more memory devices, where each memory channel corresponds to a respective one of the plurality of memory dies of one of the memory devices, the channel switch circuit comprising command processing logic configured to: receive, from the memory sub-system controller, a plurality of channel mappings, each of which identifies a particular one of the controller channels and a particular one of the memory channels, and route data from each controller channel to a respective one of the memory channels that is associated with the controller channel by a respective one of the channel mappings.

Accessing memory devices via switchable channels

A memory device includes an interface to communicate with a host, an array of memory cells, and a controller. The controller is configured to access the array of memory cells in response to commands from the host. The controller is further configured to enter an idle time in response to no commands from the host with queue empty, receive a first command from the host, and exit the idle time in response receiving a second command from the host. The controller is further configured to for a plurality of idle times, generate a history indicating a length of each idle time. The controller is further configured to predict the length of a subsequent idle time based on the history.

Memory devices including idle time prediction

Increases in efficiency of storage device operation may be realized if the limited number of available high-priority communication channels are better optimized and assigned among hosts that may best utilize them. This assignment can occur in response to an evaluation of the overall zone usage or by received metadata and/or indicia from the host. The storage device may periodically, or in response to a command, reevaluate the assigned priority status of each communication channel and associated host/zone pair. For example, the storage device may demote or remove a communication channel from high-priority to low-priority. This process can be continued during a preconfigured time window which can be adjusted before, during, or after priority evaluation. The continuous operation of this process can allow for adjustments being made to priority levels within the storage device that may further increase total operational efficiency.

Identification and classification of write stream priority

A type of data relocation to perform on a group of solid state storage cells is selected from a group that includes garbage collection and wear leveling. Source blocks in the group of solid state storage cells are identified using the selected type of data relocation. The source blocks are read in order to obtain relocated data and the relocated data is stored in an open block in the group of solid state storage cells. Relocated data associated with the selected type of data relocation is stored in the open block and relocated data associated with the unselected type of data relocation is excluded from the open block.

Data separation during garbage collection and wear leveling

A memory system include a memory device including a plurality of blocks, each of the blocks having a plurality of pages, and a controller suitable for determining valid pages from among the plurality of pages based on data temperature, and performing a garbage collection process based on a number of valid pages and data temperature of the valid pages.

Memory system and memory management method thereof

Memory systems may include a memory including a plurality of blocks, and a controller suitable for determining a pool of blocks from the plurality of blocks as garbage collection (GC) victim block candidates based on a number of valid pages left in each of the plurality of blocks, and selecting a block from the pool of blocks having a minimum number of valid pages as a victim block for garbage collection.

Data separation by delaying hot block garbage collection

A charge constrained bit sequence is processed to obtain a lower bound on a number of bit errors associated with the charge constrained bit sequence. The lower bound is compared against an error correction capability threshold associated with an error correction decoder. In the event the lower bound is greater than or equal to the error correction decoder threshold, an error correction decoding failure is predicted.

Reading and writing to NAND flash memories using charge constrained codes

A total bytes written (TBW) requirement associated with solid state storage is obtained. A size of a cache associated with the solid state storage is determined based at least in part on the TBW requirement. The size of the cache is adjusted to be the determined size

Sizing a cache while taking into account a total bytes written requirement

Methods for programming word lines in a block include identifying the block to be programmed, opening the block for programming, and programming a first word line in the block and a second word line in the block. The first word line and the second word line are separated by a number of word lines that are skipped during programming, and the number of word lines that are skipped being based on a predetermined interval.

Methods of system optimization by over-sampling read

Memory systems may include a memory storage, and a controller suitable for measuring a write amplification (WA) value of a first, current window, comparing the WA value for the first window with a previous WA value for a previous window, and calculating and setting a value of a ratio threshold based on the comparison of the WA value for the current window threshold to the WA value of the previous window threshold.

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Xiangyu Tang