Wenzhou University

Zhejiang Sanou Machinery Co. Ltd.

Xiangyu Li

Pengjun Wang

Hao Ye

Gang Li

Bo Chen

Xu Dong Wu

Xiao Wei Zhang

A signal processing circuit for a tunneling magnetoresistance sensor comprises thirty-eight MOS transistors, two capacitors and ten switches. A first switch, a second switch, a third switch, a fourth switch, a first MOS transistor, a second MOS transistor, a third MOS transistor and a fourth MOS transistor form a high-frequency modulation circuit. A fifth switch, a sixth switch, a seventh switch, an eighth switch, a seventeenth transistor, a twenty-second MOS transistor and a twenty-third MOS transistor form a high-frequency demodulation circuit. A signal output by a tunneling magnetoresistance sensor is modulated to a chopping frequency by the high-frequency modulation circuit, and is then demodulated by the high-frequency demodulation circuit.

Signal processing circuit for tunneling magnetoresistance sensor

A readout circuit for a high-precision vibration sensor comprises an on-chip self-test circuit, a low-noise charge amplifier, a correlated double sampling circuit, a PID feedback control circuit, a phase compensation circuit and Sigma-Delta. A self-test signal is amplified by the low-noise charge amplifier, low-frequency noise and offsets are filtered out by the correlated double sampling circuit, then a self-test path and a working path of a vibration sensor are separated in the time domain by the PID feedback control circuit, the phase compensation circuit performs zero compensation and pole compensation on the signal, and Sigma-Delta converts an analog signal into a high-precision digital signal.

Readout circuit for high-precision vibration sensor

The present invention discloses a highly reliable positive-to-negative voltage conversion circuit, including a first inverter, a first buffer, a second buffer, a first to seventh NMOS transistors, a first to third PMOS transistors, a first resistor, a second resistor, a third resistor, and a fourth resistor, wherein the third PMOS transistor, the third NMOS transistor, the fourth NMOS transistor, the fifth NMOS transistor, the sixth NMOS transistor and the seventh NMOS transistor form an on/off control circuit, with that a power supply path between a positive-voltage power supply terminal and a negative-voltage power supply terminal is physically isolated by the on/off control circuit to eliminate voltage reversing occurring when the positive-voltage power supply terminal and the negative-voltage power supply terminal cannot be synchronized during power-on.

Highly reliable positive-to-negative voltage conversion circuit

A PUF-based magnetometer with a safety protection circuit is provided. The PUF-based magnetometer includes a TMR magnetometer main structure, a control circuit, a column encoder circuit, a row encoder circuit, a multiplexer and a dynamic comparator. The TMR magnetometer main structure includes n*n TMR sensors, and the TMR magnetometer main structure can also form a PUF circuit together with a control circuit, a column encoder circuit, a row encoder circuit, a multiplexer and a dynamic comparator to realize a function of a TMR magnetometer. The PUF circuit generates PUF response signals based on random deviations of a TMR sensor fabrication process. The PUF response signals generated by the PUF circuit make it more difficult for attackers to locate specific positions of the TPR sensors, and even make it hard to know the existence of the deviations of the TMR sensors.

PUF-based magnetometer with safety protection circuit

A low-power pulse output circuit comprises first to third PMOS transistors, first NMOS to third NMOS transistors, a resistor regulation module, a capacitor regulation module, an inverter and a buffer. Drains of the first PMOS and first NMOS transistors, gates of the first NMOS, second PMOS, second NMOS, and third NMOS transistors are connected. Drain of the second PMOS transistor, gate of the third PMOS transistor and one terminal of the resistor regulation module are connected. The other terminal of the resistor regulation module and drain of the second NMOS transistor are connected. Drain of the third PMOS transistor, drain of the third NMOS transistor and an input terminal of the inverter are connected. An output terminal of the inverter, the other terminal of the capacitor regulation module and an input terminal of the buffer are connected.

Low-power pulse output circuit

A hand-tight drill chuck with a lock and self-locking structure including an elastic piece with an arcuate portion, arranged on a ring member threadedly connected to a clamping claw. The two ends of the arcuate portion are restricted. The elastic piece has a locking portion and groove or protrusion that cooperate with teeth between two ends of the arcuate portion. The drill chuck has a rotation sleeve with control structure. The control structure includes a metal member with elastic portion having a protrusion or groove that cooperate with the groove or protrusion. When the groove or protrusion of the elastic piece withstands against and is engaged with the protrusion or groove of the metal member via elasticity, the drill chuck is in a self-locking state. This ensures a locking torque and unlocking torque by elastic match between an elastic force which is not slack.

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Zhejiang, China

Xiangyu Li