Beijing Superstring Academy of Memory Technology

Beijing Sanju Environmental Protection and New Material Co., Ltd.

Chinese Pla General Hospital

Citic Technology, Inc.

Xiangsheng Wang

Zhenyi Liu

Guilei Wang

Xuezheng Ai

Wenhua Gui

Jin Dai

Chao Zhao

Zhiqiang Wu

A semiconductor device, manufacturing method therefor, and electronic equipment are provided. The manufacturing method includes: alternately depositing sacrificial layers and insulation layers to obtain a stacked structure; forming in the stacked structure a plurality of via holes distributed at intervals, and forming dummy word lines in the via holes; forming a first trench penetrating through the stacked structure every two via holes apart; forming a plurality of grooves by re-etching the plurality of insulation layers within the first trench, wherein two grooves of each insulation layer in two first trenches respectively expose partial side walls of a dummy word line; forming conductive layers within the two grooves corresponding to each insulation layer, wherein a conductive layer within each groove surrounds two exposed dummy word lines; and disconnecting a conductive layer surrounding a dummy word line to form a first electrode and a second electrode of a transistor.

Semiconductor device, manufacturing method therefor, and electronic equipment

Provided are a semiconductor device and manufacturing method thereof, and an electronic device. The semiconductor device includes multiple storage cells distributed in a direction perpendicular to a base substrate, the multiple storage cells include multiple transistors and capacitors distributed in different layers and stacked in the direction perpendicular to the base substrate; a word line penetrating different layers and extending in the direction perpendicular to the base substrate; a transistor includes a first source/drain electrode, a second source/drain electrode and a semiconductor layer surrounding a sidewall of the word line; first insulating layers and conductive layers alternately distributed in the direction perpendicular to the base substrate, at least one first hole penetrating the different layers; and the second electrode of the capacitor includes an inner electrode disposed in the first hole on the first electrode.

Semiconductor device, manufacturing method therefor, and electronic device

A desulfurizer containing at least a composition of a highly concentrated amorphous iron oxide hydroxide as the active ingredient. A method for preparing a composition containing at least a highly concentrated amorphous iron oxide hydroxide. A method for regenerating the desulfurizer. The desulfurizer contains at least the composition of a highly concentrated amorphous iron oxide hydroxide as the active ingredient and a binder. The composition and the desulfurizer have a high sulfur capacity and can be regenerated. This saves resources and reduces environmental pollution. The method for regenerating the desulfurizer includes at least the following steps: a) mixing a solid soluble ferrous salt with a solid hydroxide, b) kneading the mixture and allowing it to react at temperatures not exceeding 90&#xb0; C., c) drying in air, d) washing with water and filtering to yield a solid, and e) drying naturally or roasting the solid.

Composition of amorphous iron oxide hydroxide, desulfurizer comprising the same, and methods for preparing and regenerating the desulfurizer

A wet desulfurizing method for removal of HS from gaseous stream at normal temperature, the method including: (a) contacting and reacting the gaseous stream containing HS with a suspension containing desulfurizer in a desulfurization reactor; (b) leading the suspension containing waste agent produced by desulfurizing of desulfurizer after the reaction in step (a) to a regenerative reactor, and regenerating the waste agent using an oxygen-containing gas; (c) leading the suspension containing desulfurizer regenerated in step (b) to the desulfurization reactor in step (a), and contacting and reacting with the gaseous stream containing HS. A simple method for removing hydrogen sulfide from gas at room temperature and normal pressure, which features high desulfurization rate and low cost.

Method for removing hydrogen sulfide from gaseous stream at normal temperature

The apparatus and method of the present invention are used to detect the ECG and/or blood pressure (BP) waveforms and measure the R-R and Q-T intervals from the detected ECG signals, so as to determine the pulse structure of the heart stimulating signals, and to stimulate the heart. The heart is stimulated by the stimulating signals which includes a pacing pulse train applied to atrium for forming an artificial heart rhythm, and an inducing pulse train applied to ventricle for introducing ME or VT waveforms. By adjusting the time location and amplitude of the inducing pulses relative to the pacing pulses, the ME or VT waveforms are induced in the ECG signals. By detecting the ECG and/or BP waveforms, the ME or VT is identified and at the same time the heart stimulation is stopped. Then the induced ME or VT waveforms and the amplitude of the inducing pulse which induces the ME or VT waveforms are displayed and the ventricular fibrillation threshold is derived according to this amplitude.

Growing community of inventors

Beijing, China

Xiangsheng Wang