Boe Technology Group Co., Ltd.

Beijing Boe Sensor Technology Co., Ltd.

Beijing Boe Optoelectronics Technology Co., Ltd.

Xiangmi Zhan

Xuecheng Hou

Jianxing Shang

Zhi Ding

Guan Zhang

Huinan Xia

Jingjie Su

Zhenyu Wang

Zhenwu Jiang

Cheng Li

Dexi Kong

Kunjing Chung

Yifan Yang

A detection base plate and a flat-panel detector. The detection base plate comprises multiple detection pixel units arranged in an array. Each detection pixel unit comprises: a thin-film transistor, a sacrificial layer and a photoelectric conversion part that are disposed on a substrate, wherein the sacrificial layer is located between the thin-film transistor and the photoelectric conversion part; the thin-film transistor comprises an active layer, a first electrode and a second electrode; at least part of an orthographic projection of the active layer on the substrate is located within an orthographic projection of the sacrificial layer on the substrate; and the photoelectric conversion part is electrically connected to the sacrificial layer and the first electrode. In the detection base plate, the sacrificial layers of the detection pixel units are mutually independent.

Detection base plate and flat-panel detector

There is provided a detection panel, including: a substrate, gate lines, signal detection lines and pixels, a thin film transistor and an optical sensor are arranged in each pixel, the thin film transistor has a gate coupled with the corresponding gate line, a first electrode coupled with the corresponding signal detection line, and a second electrode coupled with a third electrode of the optical sensor in the same pixel; the pixels include at least one detecting pixel and at least one marking pixel, a first bias voltage line and a second bias voltage line are arranged on a side of the optical sensor away from the substrate, a fourth electrode of the optical sensor in the detecting pixel is coupled with the corresponding first bias voltage line, and the second electrode of the thin film transistor in the marking pixel is coupled with the corresponding second bias voltage line.

Detection panel, method for manufacturing the same and flat panel detector

The present disclosure provides a detection substrate, including: a base substrate, detection pixel units arranged in an array on the base substrate, where each detection pixel unit includes: a thin film transistor and a photoelectric conversion part located on a side of the thin film transistor, and a bias voltage line is arranged on a side of the photoelectric conversion part. The thin film transistor includes: an active layer, a first electrode and a second electrode, and the active layer including a channel region. At least one dielectric layer is provided between the photoelectric conversion part and the bias voltage line, and is formed with a first via hole therein, and at least part of an orthographic projection of the channel region on the base substrate is located within an orthographic projection of the first via hole on the base substrate. A flat panel detector is further provided.

Detection substrate and flat panel detector

The embodiments of the present disclosure provide a detection substrate, a preparation method thereof and a flat panel detector. An orthographic projection of a first electrode on the base substrate is set to be at least partially overlapped with an orthographic projection of an active layer of a thin film transistor on the base substrate, a first protruding part is arranged on a side, close to a corresponding data line, of the first electrode, an orthographic projection of the first protruding part on the base substrate is located between the orthographic projection of the active layer on the base substrate and an orthographic projection of the data line on the base substrate.

Detection substrate, preparation method thereof and flat panel detector

A radiation detector having a plurality of pixels is provided. A respective one of the plurality of pixels includes a base substrate; a thin film transistor on the base substrate; an insulating layer on a side of the thin film transistor away from the base substrate; a photosensor on a side of the insulating layer away from the base substrate; a passivation layer on a side of the photosensor away from the base substrate; a scintillation layer on a side of the passivation layer away from the base substrate; and a reflective layer on a side of the scintillation layer away from the base substrate. The photosensor includes a first polarity layer in direct contact with the passivation layer. All sides of the first polarity layer other than a side internal to the photosensor are entirely in direct contact with the passivation layer.

Radiation detector, method of operating radiation detector, and method of fabricating radiation detector

A flat-panel detector includes: a ray-conversion layer configured to convert rays into a light having a first wavelength; and a plurality of imaging units. At least one of the plurality of imaging units includes: a photo sensor configured for receiving the light and converting the light to an electrical signal; and a light guider located a side of the photo sensor adjacent to the ray-conversion layer, the light guider having a light entry surface adjacent to the ray-conversion layer and a light exit surface adjacent to the photo sensor, the light entry surface being configured to receive the light from the ray-conversion layer and having an area greater than an area of the light exit surface, and an orthogonal projection of the light exit surface in a direction perpendicular to the ray-conversion layer at least partially overlapping that of the photo sensor.

Flat-panel detector comprising light-transmission layer between ray-conversion layer and photoelectric conversion layer and method of manufacturing flat-panel detector

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Beijing, China

Xiangmi Zhan