Apple Inc.

Aptina Imaging Corporation

Micron Technology Incorporated

Semiconductor Components Industries, LLC

Xiangli Li

Xiaofeng Fan

Chung Chun Wan

Gennadiy A Agranov

Zhiping Yin

Terry L Gilton

Oray Orkun Cellek

John W Ladd

Anup K Sharma

Chiajen Lee

Jaroslav Hynecek

Claus Molgaard

Hirofumi Komori

Peter Parker Altice

Ashirwad Bahukhandi

Gershon Rosenblum

Xia Zhao

Suppawan Kleekajai

QingFei Chen

Philip H Li

Chen Hui Xu

Sheng Lin

Richard A Mauritzson

Yingjun Bai

Emanuele Mandelli

Zachary Michael Beiley

Rick Mauritzson

Bernhard Buettgen

Andras G Pattantyus-abraham

Hong Wei Lee

Kai Shen

Lilong Shi

Gilad Michael

Dajiang Yang

Yuchuan Shao

Manoj C Patel

Aditya Rayankula

Jon Adams

Paul Perez

Disclosed herein are global shutter image sensors and methods of operating such image sensors. An image sensor includes a semiconductor wafer having a light receiving surface opposite an electrical connection surface; an oxide extending from the light receiving surface toward the electrical connection surface and at least partially surrounding a pixel region; a photodiode disposed within the pixel region; and a set of storage nodes disposed under the photodiode, between the photodiode and the electrical connection surface. The set of storage nodes comprises a first storage node and a second storage node. The storage nodes may be disposed vertically beneath the photodiode, or side by side.

Dual embedded storage nodes and vertical transfer gates for pixels of global shutter image sensors

An electronic device includes a housing including a front cover opposite a back cover; a display viewable through the front cover; a light-bending mirror positioned between the front cover and the back cover and receiving light through one of the front cover or the back cover, the light-bending mirror redirecting received light along a light path parallel to the front cover and the back cover; a dichroic cube prism positioned in the light path, the dichroic cube prism receiving light through a first face of the dichroic cube prism, redirecting a visible light portion of the received light through a second face of the dichroic cube prism, and redirecting an infrared (IR) portion of the received light through a third face of the dichroic cube prism; a visible light image sensor positioned adjacent the second face; and an IR light image sensor positioned adjacent the third face.

Shared aperture imaging system for acquiring visible and infrared images

A sensor stack is described. The sensor stack includes first and second electromagnetic radiation sensors. The first electromagnetic radiation sensor has a high quantum efficiency for converting a first range of electromagnetic radiation wavelengths into a first set of electrical signals. The second electromagnetic radiation sensor is positioned in a field of view of the first electromagnetic radiation sensor and has a high quantum efficiency for converting a second range of electromagnetic radiation wavelengths into a second set of electrical signals and a low quantum efficiency for converting the first range of electromagnetic radiation wavelengths into the second set of electrical signals. The first range of wavelengths does not overlap the second range of wavelengths, and the second electromagnetic radiation sensor is at least partially transmissive to the first range of electromagnetic radiation wavelengths.

Stacked electromagnetic radiation sensors for visible image sensing and infrared depth sensing, or for visible image sensing and infrared image sensing

An image capture device is described. The image capture device includes an array of pixels, each pixel including a photodetector. A Bayer pattern color filter is disposed over a 4×4 subset of pixels in the array of pixels. The Bayer pattern color filter defines a first 2×2 subset of pixels sensitive to red light; a second 2×2 subset of pixels sensitive to green light; a third 2×2 subset of pixels sensitive to green light; and a fourth 2×2 subset of pixels sensitive to blue light. A set of 1×1 on-chip lenses (OCLs) includes a different 1×1 OCL disposed over each pixel in the second 2×2 subset of pixels and the third 2×2 subset of pixels. A set of 2×1 OCLs or 2×2 OCLs includes a 2×1 OCL or a 2×2 OCL disposed over each pixel in the first 2×2 subset of pixels and the fourth 2×2 subset of pixels.

Image capture devices having phase detection auto-focus pixels

An image capture device is described. The image capture device includes an array of pixels. Each pixel includes a 2&#xd7;2 array of photodetectors. The image capture device also includes an array of 1&#xd7;2 on chip lenses (OCLs) disposed over the array of pixels. For each pixel in the array of pixels, a respective pair of adjacent 1&#xd7;2 OCLs is disposed over a pixel, with each respective pair of adjacent 1&#xd7;2 OCLs including a respective first 1&#xd7;2 OCL disposed over a first photodetector and a respective second photodetector in the 2&#xd7;2 array of photodetectors for the pixel, and a second 1&#xd7;2 OCL disposed over a third photodetector and a fourth photodetector in the 2&#xd7;2 array of photodetectors for the pixel.

Imaging apparatus () includes a photosensitive medium () and a bias electrode (), which is at least partially transparent, overlying the photosensitive medium. An array of pixel circuits () is formed on a semiconductor substrate (). Each pixel circuit includes a pixel electrode () coupled to collect the charge carriers from the photosensitive medium; a readout circuit () configured to output a signal indicative of a quantity of the charge carriers collected by the pixel electrode; a skimming gate () coupled between the pixel electrode and the readout circuit; and a shutter gate () coupled in parallel with the skimming gate between a node () in the pixel circuit and a sink site. The shutter gate and the skimming gate are opened sequentially in each of a sequence of image frames so as to apply a global shutter to the array and then to read out the collected charge carriers via the skimming gate to the readout circuit.

Hybrid image sensors with improved charge injection efficiency

Apparatuses and methods for charge transfer in image sensors are disclosed. One example of an image sensor pixel may include a first charge storage node and a second charge storage node. A transfer circuit may be coupled between the first and second charge storage nodes, and the transfer circuit may have a first region proximate the first charge storage node and configured to have a first potential. The transfer circuit may also have a second region proximate the second charge storage node configured to have a second, higher potential. An input node may be configured to control the first and second potentials based on a transfer signal provided to the input node.

Methods for transferring charge in an image sensor

A method for processing an image includes obtaining a set of pixel values captured from a pixel array during an image capture frame. The set of pixel values includes pixel values for a set of asymmetric pixels having different directional asymmetries. The method further includes detecting, using the pixel values for at least the asymmetric pixels and the different directional asymmetries of the asymmetric pixels, a directionality of image flare; and processing an image defined by the set of pixel values in accordance with the detected directionality of image flare. In some embodiments, image flare may be distinguished from noise using the set of pixel values.

Image flare detection using asymmetric pixels

Pixel binning is performed by summing charge from some pixels positioned diagonally in a pixel array. Pixel signals output from pixels positioned diagonally in the pixel array may be combined on the output lines. A signal representing summed charge produces a binned 2&#xd7;1 cluster. A signal representing combined voltage signals produces a binned 2&#xd7;1 cluster. A signal representing summed charge and a signal representing combined pixel signals can be combined digitally to produce a binned 2&#xd7;2 pixel. Orthogonal binning may be performed on other pixels in the pixel array by summing charge on respective common sense regions and then combining the voltage signals that represent the summed charge on respective output lines.

Pixel binning in an image sensor

An image capture device, pixel, and method of determining a focus setting for an image capture device are described. The image capture device includes an imaging area and a pixel readout circuit. The imaging area includes a plurality of pixels. The plurality of pixels includes multiple pixels in which each pixel of the multiple pixels includes a two-dimensional array of photodetectors and a microlens. Each photodetector in the array of photodetectors for a pixel is electrically isolated from each other photodetector in the array of photodetectors. A microlens is disposed over the array of photodetectors for the pixel. The pixel readout circuit includes, per pixel, a shared readout circuit associated with the array of photodetectors for the pixel and a set of charge transfer transistors. Each charge transfer transistor is operable to connect a photodetector in the array of photodetectors to the shared readout circuit.

Image capture device, pixel, and method providing improved phase detection auto-focus performance

An imaging area in an image sensor includes a plurality of photo detectors. A light shield is disposed over a portion of two photo detectors to partially block light incident on the two photo detectors. The two photo detectors and the light shield combine to form an asymmetrical pixel pair. The two photo detectors in the asymmetrical pixel pair can be two adjacent photo detectors. The light shield can be disposed over contiguous portions of the two adjacent photo detectors. A color filter array can be disposed over the plurality of photo detectors. The filter elements disposed over the two photo detectors can filter light representing the same color or different colors.

Image sensor with in-pixel depth sensing

Imaging apparatus includes a photosensitive medium and a bias electrode, which is at least partially transparent, overlying the photosensitive medium. An array of pixel circuits is formed on a semiconductor substrate. Each pixel circuit includes a pixel electrode coupled to collect the charge carriers from the photosensitive medium; a readout circuit configured to output a signal indicative of a quantity of the charge carriers collected by the pixel electrode; a skimming gate coupled between the pixel electrode and the readout circuit; and a shutter gate coupled in parallel with the skimming gate between a node in the pixel circuit and a sink site. The shutter gate and the skimming gate are opened sequentially in each of a sequence of image frames so as to apply a global shutter to the array and then to read out the collected charge carriers via the skimming gate to the readout circuit.

Pixel array with shared pixels in a single column and associated devices, systems, and methods are disclosed herein. In one embodiment, a pixel array includes a floating diffusion region, a source a source follower transistor having a gate coupled to the floating diffusion region, a plurality of first pixels associated with a first color, and a plurality of second pixels associated with a second color different than the first color and arranged in a single column with the first pixels. The first and second pixels are configured to transfer charge to the floating diffusion region.

Pixel array with shared pixels in a single column and associated devices, systems, and methods

A pixel in an image sensor can include a photodetector and a storage region disposed in one substrate, or a photodetector disposed in one substrate and a storage region in another substrate. A buried light shield is disposed between the photodetector and the storage region. A sense region, such as a floating diffusion, can be adjacent to the storage region, with the buried light shield disposed between the photodetector and the storage and sense regions. When the photodetector and the storage region are disposed in separate substrates, a vertical gate can be formed through the buried light shield and used to initiate the transfer of charge from the photodetector and the storage region. A transfer channel formed adjacent to, or around the vertical gate provides a channel for the charge to transfer from the photodetector to the storage region.

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San Jose, CA, United States of America

Xiangli Li