Applied Materials, Inc.

Xiangjin Xie

Xianmin Tang

Martin Lee Riker

Fuhong Zhang

Rui Li

Luke Vianney Varkey

Kevin Kashefi

Alexander Jansen

Adolph Miller Allen

Joung Joo Lee

Tae Hong Ha

Shirish A Pethe

Lanlan Zhong

Carmen Leal Cervantes

Lu Chen

Kishor Kumar Kalathiparambil

Mei Yin Chang

Mark Joseph Saly

Feng Quan Liu

Keith A Miller

Bhaskar Jyoti Bhuyan

Feng Chen

David Michael Thompson

Daping Yao

Aaron Dangerfield

Drew Phillips

Michael L McSwiney

Rongjun Wang

Yixiong Yang

Yu Lei

Sahil Patel

Yi Xu

Goichi Yoshidome

Haitao Wang

Xiaodong Wang

Tsung-Han Yang

Wei Lei

Cheng-Hsiung Matthew Tsai

Aravind Kamath

Paul Dennis Connors

Wenjing Xu

Anthony Chih-Tung Chan

Gang Shen

Jiajie Cen

Aixi Zhang

Zhimin Qi

Xingyao Gao

Shiyu Yue

Noufal Kappachali

Ju Hyun Oh

Yida Lin

Lewis Yuan Tse Lo

Junjie Pan

Yao Wu

Process chamber collimator

Methods for selectively depositing a self-assembled monolayer (SAM) on metallic surfaces are disclosed. Some embodiments of the disclosure utilize phenanthroline or a phenanthroline derivative to form the self-assembled monolayer. Some embodiments selective form the self-assembled monolayer on tungsten or molybdenum. Some embodiments utilize the self-assembled monolayer to selectively deposit on dielectric surfaces over metallic surfaces.

Self-assembled monolayer for selective deposition

Methods of monitoring arcing in a process chamber, processing chambers and monitoring apparatus are described. At least one of the angular or radial position of a magnetron is determined in the chamber relative to a reference location on a surface of the substrate using positional information from one or more motors. An arcing profile is generated comprising a plurality of arcing states measured based at least on the determined angular and/or radial position of the magnetron.

System for target arcing mapping and plasma diagnosis

A method of pre-cleaning in a semiconductor structure includes performing a plasma pre-treatment process to remove impurities from a surface of a semiconductor structure comprising a metal layer and a dielectric layer, performing a selective etch process to remove molybdenum oxide from a surface of the metal layer, the selective etch process comprising soaking the semiconductor structure in a precursor including molybdenum chloride (MoCl, MoCl) at a temperature of between 250° C. and 350° C., and performing a post-treatment process to remove chlorine residues and by-products of the selective etch process on the surface of the semiconductor structure.

Metal oxide preclean for bottom-up gapfill in MEOL and BEOL

Methods and apparatus for forming a barrier layer are provided herein. In some embodiments, a method of forming a barrier layer on a substrate includes treating an exposed layer deposited on a substrate and within a feature of the substrate by pulsing a bias power applied to a substrate support supporting the substrate while exposing the layer to a plasma. The exposed layer can be deposited by an atomic layer deposition process, and can be, for example, a tantalum nitride layer. The bias power can be up to 500 watts of RF power at a pulse frequency of about 1 Hz to about 10 kHz. The bias power can be pulsed uniformly or at multiple different levels.

Pulsing plasma treatment for film densification

Methods for monitoring process chambers using a controllable plasma oxidation process followed by a controlled reduction process and metrology are described. In some embodiments, the metrology comprises measuring the reflectivity of the metal oxide film formed by the controllable plasma oxidation process and the reduced metal film or surface modified film formed by reducing the metal oxide film.

Methods for in-situ chamber monitoring

Methods of forming copper interconnects are described. A doped tantalum nitride layer formed on a copper layer on a substrate has a first amount of dopant. The doped tantalum nitride layer is exposed to a plasma comprising one or more of helium or neon to form a treated doped tantalum nitride layer with a decreased amount of dopant. Apparatus for performing the methods are also described.

Impurity removal in doped ALD tantalum nitride

Methods for selectively depositing on metallic surfaces are disclosed. Some embodiments of the disclosure utilize a hydrocarbon having at least two functional groups selected from alkene, alkyne, ketone, hydroxyl, aldehyde, or combinations thereof to form a self-assembled monolayer (SAM) on metallic surfaces.

Selective blocking of metal surfaces using bifunctional self-assembled monolayers

Methods and apparatus for processing a substrate are provided herein. For example, an RF power delivery compensation circuit comprises a first input configured to receive an RF forward power from an RF power source connected to a processing chamber and a second input configured to receive an RF delivered power from a matching network connected between the RF power source and the processing chamber. The RF power delivery compensation circuit calculates an RF forward power compensation factor based on the RF forward power and the RF delivered power for adjusting the RF forward power delivered to the processing chamber during operation.

Methods and apparatus for processing a substrate

Collimator for a physical vapor deposition (PVD) chamber

Methods for selectively depositing on metallic surfaces are disclosed. Some embodiments of the disclosure utilize a hydrocarbon having at least two functional groups selected from alkene, alkyne, ketone, alcohol, ester, or combinations thereof to form a self-assembled monolayer (SAM) on metallic surfaces.

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Fremont, CA, United States of America

Xiangjin Xie