Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.

Peking University

Xiang Xiao

Shengdong Zhang

Xin He

Yang Shao

Baixiang Han

Yan Xue

Signal detector

The present disclosure provides a display panel including gate lines and data lines disposed on a base substrate. The base substrate is further divided into pixel regions including transparent regions and pixel circuit regions having pixel circuits. The pixel circuit regions of at least two adjacent pixel regions are disposed next to each other and form a pixel circuit joining region, so that the pixel circuit regions of a same row or a same column of the pixel regions are arranged spaced apart from each other. Two adjacent pixel circuit joining regions are spaced apart by the transparent regions.

Display panel with separated pixel circuit regions

Provided are a pixel circuit, a display panel, and a compensation method of a reference voltage of a pixel circuit, including a plurality of pixel internal driving circuits arranged in an array. The internal driving circuit of each pixel includes: a first thin film transistor (T), a second thin film transistor (T), a fourth thin film transistor (T), a first capacitor (C), an organic light emitting diode (D), and a compensation module. By setting the compensation module, the compensation module is connected to a scan signal (EM). An end of the compensation module is connected to a first node (G), and another end of the compensation module is connected to a power supply voltage (VDD). The compensation module is configured to compensate a potential drop of the first node (G) due to coupling of the first capacitor (C).

Pixel circuit, display panel, and compensation method of reference voltage of pixel circuit

An embodiment of the present invention discloses an electrostatic protection device and a display panel. The electrostatic protection device includes a first electric discharge circuit and a second electric discharge circuit. An input terminal of the first electric discharge circuit is connected to a display circuit of the display panel. An output terminal of the first electric discharge circuit is connected to an electrostatic discharge line. An input terminal of the second electric discharge circuit is connected to an external signal input terminal of the display circuit. An output terminal of the second electric discharge circuit is connected to the electrostatic discharge line. The present invention can prevent damages of the display panel.

Electrostatic protection device and display panel

A method for fabricating a metal oxide thin film transistor comprises selecting a substrate and fabricating a gate electrode thereon; growing a layer of dielectric or high permittivity dielectric on the substrate to serve as a gate dielectric layer; growing a first metal layer on the gate dielectric layer and a second metal layer on the first metal layer; fabricating a channel region at a middle position of the first metal layer and a passivation region at a middle position of the second metal layer; anodizing the metals of the passivation region and the channel region at atmospheric pressure and room temperature; fabricating a source and a drain; forming an active region comprising the source, the drain, and the channel region; depositing a silicon nitride layer on the active region; fabricating two electrode contact holes; depositing a metal aluminum film; and fabricating two metal contact electrodes by photolithography and etching.

Method for fabricating a metal oxide thin film transistor

A method for fabricating a metal oxide thin film transistor comprises the steps of: selecting a substrate and fabricating a gate electrode on the substrate; growing a layer of dielectric or a high permittivity dielectric on the substrate, and allowing the layer of dielectric or high permittivity dielectric to cover the gate electrode to serve as a gate dielectric layer; growing a metal layer on the gate dielectric layer; fabricating a channel in the middle position of the metal layer; anodizing the metal of the channel at atmospheric pressure and room-temperature; fabricating an active region comprising a source, a drain, and the channel; depositing a silicon nitride layer on the active region and forming two contact holes of the electrodes on the silicon nitride layer; and depositing a layer of aluminum film and fabricating two metal contact electrodes of the thin film transistor.

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Shenzhen, China

Xiang Xiao