Globalfoundries U.S. Inc.

Xiang Xiang Lu

Robert J Gauthier, Jr

Rajendran Krishnasamy

Anindya Nath

Anupam Dutta

Vvss Satyasuresh Choppalli

Structures including multiple semiconductor devices and methods of forming same. The structure comprises a first device structure including a first well and a second well in a semiconductor substrate, a second device structure including a doped region in the semiconductor substrate, and a first high-resistivity region in the semiconductor substrate. The first well has a first conductivity type, the second well has a second conductivity type opposite to the first conductivity type, and the first well adjoins the second well to define a p-n junction. The doped region of the second device structure has the first conductivity type or the second conductivity type. The high-resistivity region has a higher electrical resistivity than the semiconductor substrate, and the high-resistivity region is positioned between the first device structure and the second device structure.

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Essex Junction, VT, United States of America

Xiang Xiang Lu