Maxim Integrated Products, Inc.

Xiang Lu

Albert M Bergemont

Yi He

N-channel multi-time programmable memory devices having an N-conductivity type substrate, first and second P-conductivity type wells in the N-conductivity type substrate, N-conductivity type source and drain regions formed in the first P-conductivity type well, the source and drain regions being separated by a channel region, an oxide layer over the N-conductivity type substrate; and a floating gate extending over the channel region and over the second P-conductivity type well in the N-conductivity type substrate, the multi-time programmable memory cell being programmable by hot electron injection and erasable by hot hole injection.

N-channel multi-time programmable memory devices

Techniques are described to form a low-noise, high-gain semiconductor device. In one or more implementations, the device includes a substrate including a first dopant material having a concentration ranging from about 1&#xd7;10/cmto about 1&#xd7;10/cm. The substrate also includes at least two active regions formed proximate to a surface of the substrate. The at least two active regions include a second dopant material, which is different than the first dopant material. The device further includes a gate structure formed over the surface of the substrate between the active regions. The gate structure includes a doped polycrystalline layer and an oxide layer formed over the surface between the surface and the doped polycrystalline layer. The doped polycrystalline layer includes the first dopant material having a concentration ranging from about 1&#xd7;10/cmto about 1&#xd7;10/cm.

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Xiang Lu