United Semiconductor (xiamen) Co., Ltd.

Xiang Bo Kong

Wen Yi Tan

Dejin Kong

Jinjian Ouyang

Chin-Chun Huang

Shuzhi Zou

A resistive memory device includes a stacked structure and a copper via conductor structure. The stacked structure includes a first electrode, a second electrode, and a variable resistance layer. The second electrode is disposed above the first electrode in a vertical direction, and the variable resistance layer is disposed between the first electrode and the second electrode in the vertical direction. The copper via conductor structure is disposed under the stacked structure. The first electrode includes a tantalum nitride layer directly connected with the copper via conductor structure.

Resistive memory device

A resistive random access memory includes a first dielectric layer, a bottom electrode on the first dielectric layer, a variable-resistance layer on the bottom electrode and having a U-shaped cross-sectional profile, a top electrode on the variable-resistance layer and filling a recess in the variable-resistance layer, a second dielectric layer on the first dielectric layer and around the variable-resistance layer and the bottom electrode, and a spacer on the bottom electrode and inserting between the variable-resistance layer and the second dielectric layer.

Resistive random access memory and method of forming the same

A resistive random access memory includes a bottom electrode, a variable-resistance layer on the bottom electrode and having a U-shaped cross-sectional profile, and a top electrode on the variable-resistance layer and filling a recess in the variable-resistance layer.

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Xiang Bo Kong