National Institute for Materials Science

National Institute of Advanced Industrial Science and Technology

Tohoku University

Xiandong Xu

Kazuhiro Hono

Shinji Yuasa

Hiroaki Sukegawa

Tadakatsu Ohkubo

Takayuki Nozaki

Shinya Kasai

Masafumi Shirai

Ikhtiar

Rachwal Anna Koziol

Masahito Tsujikawa

According to one embodiment, a magnetic element includes a first layer and a second layer. The first layer includes a first element and a second element. The first element includes at least one selected from the group consisting of Fe, Co, and Ni. The second element includes at least one selected from the group consisting of Ir and Os. The second layer is nonmagnetic.

Magnetic element, magnetic memory device, and magnetic sensor

According to an embodiment, a magnetic tunnel junction includes a tunnel barrier layer provided between a first magnetic layer and a second magnetic layer. The tunnel barrier layer is a crystal body made of a stacked structure of a first insulating layer and a second insulating layer. The crystal body is oriented. The first insulating layer is made of an oxide of MgX(0&#x2264;x&#x2264;0.15). X includes at least one element selected from the group consisting of Al and Ti. The second insulating layer is made of an oxide of an alloy including at least two elements selected from the group consisting of Mg, Al, Zn, and Li. Both the first magnetic layer and the second magnetic layer are made of an alloy including B and at least one element selected from the group consisting of Co and Fe.

Magnetic tunnel junction, spintronics device using same, and method for manufacturing magnetic tunnel junction

Growing community of inventors

Tsukuba, Japan

Xiandong Xu