Silicon Storage Technology, Inc.

Huawei Technologies Co., Limited

Tencent Technology (Shenzhen) Company Limited

Future Wei Technologies, Inc.

Zte Corporation

Agency for Science, Technology and Research

Hangzhou Alicloud Feitian Information Technology Co., Ltd.

Xian Liu

Nhan Do

Feng Zhou

Chunming Wang

Leo Xing

Jinho Kim

Serguei Jourba

Hieu Van Tran

Catherine Decobert

Melvin Diao

Chien-Sheng Su

Guo Xiang Song

Andy Qiang Liu

Alexander Kotov

Thuan Vu

Steven Lemke

Parviz Ghazavi

Vipin Tiwari

Jack Frayer

Zhu Liang

Eugene Jinglun Tam

Mandana Tadayoni

Mingwei Zhang

Anh Ly

Amitay Levi

James Prescott Hughes

Stanley Hong

Yuanlong Jiang

Jeng-Wei Yang

Gerhard Metzger-Brueckl

Daohui Wang

Yaw Wen Hu

Yuri Tkachev

Viktor Markov

Zhixian Chen

Hung Quoc Nguyen

Mark Reiten

Chun-Ming Chen

Yi Song

Xiaozhou Qian

Prateep Tuntasood

Man-Tang Wu

Kai Man Yue

Hengjun Zhu

Congnan Luo

Xiaojun Huang

Michael James Heinz

Tho Ngoc Dang

Jack Sun

Jinkai Ouyang

Dali Chen

Michael K Doan

Jung Hee Yun

Jinchun Xu

Andy Yang

Ajit Verma

Yueh-Hsin Chen

James Yingbo Jia

Stephan Wege

Henry Om'mani

Zhuoqiang Jia

Jiachao Xian

Bohan Zhang

Guo Yong Liu

Florence Guyot

Liz Cuevas

Cecile Bernardi

Nadia Miridi

Willem-Jan Toren

Jong-Won Yoo

Xinpeng Wang

Guangming Lin

Henry A Om'Mani

Ning Bai

John Plocher

Deping Yang

Yaohua Zhu

Louisa Schneider

Santosh Hariharan

Chien Sheng Su

Cheng Zhu

Fang Zheng

Xiaowei Zhu

Wang Xinpeng

Yuanfei Guo

Dmitry Bavinov

James Cheng

Chieng-Sheng Su

Guo-Qiang Lo

Melvin Dao

Zhou Feng

A method of programming non-volatile memory cells comprising determining a target read current for respective ones of the memory cells based upon incoming data, associating respective ones of the memory cells with a respective one of a plurality of cell groups based upon the determined target read current for the respective memory cell being within a target read current range associated with the respective cell group, fast programming respective ones of the memory cells to a coarse target read current associated with the cell group to which the respective memory cell is associated, wherein the coarse target read current for respective ones of the cell groups is greater than the target read current range for the respective cell group, and then slow programming respective ones of the memory cells until the target read current determined for the respective memory cell is achieved.

Coarse and fine programming of non-volatile memory cells

The present application provides a data processing method, a system, a computing device and a computer readable storage medium, wherein the data processing method is applied to a data processing node of a distributed data processing system and includes: receiving a plurality of data processing requests sent by a client, determining a target processing amount based on the number of the plurality of data processing requests, and limiting a flow of the plurality of data processing requests in accordance with the target processing amount to obtain a target data processing request; forwarding the target data processing request to a global transaction manager, receiving a processing result from processing the target data processing request by the global transaction manager, and returning the processing result to the client corresponding to each data processing request.

Data processing method and system

A method of forming a device on a silicon substrate having first, second and third areas includes recessing an upper substrate surface in the first and third areas, forming an upwardly extending silicon fin in the second area, forming first source, drain and channel regions in the first area, forming second source, drain and channel regions in the fin, forming third source, drain and channel regions in the third area, forming a floating gate over a first portion of the first channel region using a first polysilicon deposition, forming an erase gate over the first source region and a device gate over the third channel region using a second polysilicon deposition, and forming a word line gate over a second portion of the first channel region, a control gate over the floating gate, and a logic gate over the second channel region using a metal deposition.

Method of forming a device with planar split gate non-volatile memory cells, planar HV devices, and FinFET logic devices on a substrate

A method of forming a device on a semiconductor substrate having first, second, third and dummy areas, includes recessing the substrate upper surface in the first, second and dummy areas, forming a first conductive layer over the substrate, removing the first conductive layer from the third area and a second portion of the dummy area, forming a first insulation layer over the substrate, forming first trenches through the first insulation layer and into the substrate in the third area and the second portion of the dummy area, forming second trenches through the first insulation layer, the first conductive layer and into the substrate in the first and second areas and a first portion of the dummy area, and filling the first and second trenches with insulation material. Then, memory cells are formed in the first area, HV devices in the second area and logic devices in the third area.

Method of forming a semiconductor device with memory cells, high voltage devices and logic devices on a substrate using a dummy area

A memory cell array having rows and columns of memory cells with respective ones of the memory cells including spaced apart source and drain regions formed in a semiconductor substrate with a channel region extending there between, a floating gate over a first portion of the channel region, a select gate over a second portion of the channel region, and an erase gate over the source region. A strap region is disposed between first and second pluralities of the columns. For one memory cell row, a dummy floating gate is disposed in the strap region, an erase gate line electrically connects together the erase gates of the memory cells in the one row and in the first plurality of columns, wherein the erase gate line is aligned with the dummy floating gate with a row direction gap between the erase gate line and the dummy floating gate.

Memory cell array with row direction gap between erase gate lines and dummy floating gates

A method includes recessing an upper surface of a substrate in first and second areas relative to a third area, forming a first conductive layer in the first area, forming a second conductive layer in the three areas, selectively removing the first and second conductive layers in the first area, while maintaining the second conductive layer in the second and third areas, leaving pairs of stack structures in the first area respectively having a control gate of the second conductive layer and a floating gate of the first conductive layer, forming a third conductive layer in the three areas, recessing the upper surface of the third conductive layer below tops of the stack structures and removing the third conductive layer from the second and third areas, removing the second conductive layer from the second and third areas, and forming blocks of metal material in the second and third areas.

Method of forming memory cells, high voltage devices and logic devices on a semiconductor substrate

A method of forming a memory device that includes forming a first insulation layer, a first conductive layer, and a second insulation layer on a semiconductor substrate, forming a trench in the second insulation layer to expose the upper surface of the first conductive layer, performing an oxidation process and a sloped etch process to reshape the upper surface to a concave shape, forming a third insulation layer on the reshaped upper surface, forming a conductive spacer on the third insulation layer, removing portions of the first conductive layer leaving a floating gate under the conductive spacer with the reshaped upper surface terminating at a side surface at a sharp edge, and forming a word line gate laterally adjacent to and insulated from the floating gate. The conductive spacer includes a lower surface that faces and matches the shape of the reshaped upper surface.

Split-gate flash memory cell with improved control gate capacitive coupling, and method of making same

A method of forming a semiconductor device by recessing the upper surface of a semiconductor substrate in first and second areas but not a third area, forming a first conductive layer in the three areas, forming a second conductive layer in all three areas, removing the first and second conductive layers from the second area and portions thereof from the first area resulting in pairs of stack structures each with a control gate over a floating gate, forming a third conductive layer in all three areas, forming a protective layer in the first and second areas and then removing the third conductive layer from the third area, then forming blocks of dummy conductive material in the third area, then etching in the first and second areas to form select and HV gates, and then replacing the blocks of dummy conductive material with blocks of metal material.

Method of forming a semiconductor device with memory cells, high voltage devices and logic devices on a substrate

A simplified method for forming a non-volatile memory cell using two polysilicon depositions. A first polysilicon layer is formed on and insulated from the semiconductor substrate in a first polysilicon deposition process. An insulation block is formed on the first polysilicon layer. Spacers are formed adjacent first and second sides of the insulation block, and with the spacer adjacent the first side is reduced. Exposed portions of the first poly silicon layer are removed while maintaining a polysilicon block of the first polysilicon layer disposed under the insulation block. A second polysilicon layer is formed over the substrate and the insulation block in a second polysilicon deposition process. Portions of the second polysilicon layer are removed while maintaining a first polysilicon block (disposed adjacent the first side of the insulation block), and a second polysilicon block (disposed adjacent the second side of the insulation block).

Method of forming a three-gate non-volatile flash memory cell using two polysilicon deposition steps

Numerous embodiments of circuitry for a set-while-verify operation and a reset-while verify operation for resistive random access memory cells are disclosed. In one embodiment, a set-while-verify circuit for performing a set operation on a selected RRAM cell in the array applies a combination of voltages or current to a bit line, word line, and source line associated with the selected RRAM cell and stops said applying when the set operation is complete. In another embodiment, a reset-while-verify circuit for performing a reset operation on a selected RRAM cell in the array applies a combination of voltages or current to a bit line, word line, and source line associated with the selected RRAM cell and stops said applying when the reset operation is complete.

Set-while-verify circuit and reset-while verify circuit for resistive random access memory cells

A memory device, and method of making the same, that includes a substrate of semiconductor material of a first conductivity type, first and second regions spaced apart in the substrate and having a second conductivity type different than the first conductivity type, with a first channel region in the substrate extending between the first and second regions, a first floating gate disposed over and insulated from a first portion of the first channel region adjacent to the second region, a first coupling gate disposed over and insulated from the first floating gate, a first word line gate disposed over and insulated from a second portion of the first channel region adjacent the first region, and a first erase gate disposed over and insulated from the first word line gate.

Method of making split-gate non-volatile memory cells with erase gates disposed over word line gates

A method of forming a device on a substrate with recessed first/third areas relative to a second area by forming a fin in the second area, forming first source/drain regions (with first channel region therebetween) by first/second implantations, forming second source/drain regions in the third area (defining second channel region therebetween) by the second implantation, forming third source/drain regions in the fin (defining third channel region therebetween) by third implantation, forming a floating gate over a first portion of the first channel region by first polysilicon deposition, forming a control gate over the floating gate by second polysilicon deposition, forming an erase gate over the first source region and a device gate over the second channel region by third polysilicon deposition, and forming a word line gate over a second portion of the first channel region and a logic gate over the third channel region by metal deposition.

Method of forming a device with split gate non-volatile memory cells, HV devices having planar channel regions and FINFET logic devices

Numerous embodiments are disclosed of improved architectures for storing and retrieving system data in a non-volatile memory system. Using these embodiments, system data is much less likely to become corrupted due to charge loss, charge redistribution, disturb effects, and other phenomena that have caused corruption in prior art non-volatile memory systems.

Architectures for storing and retrieving system data in a non-volatile memory system

The present invention relates to a flash memory device that uses strap cells in a memory array of non-volatile memory cells as source line pull down circuits. In one embodiment, the strap cells are erase gate strap cells. In another embodiment, the strap cells are source line strap cells. In another embodiment, the strap cells are control gate strap cells. In another embodiment, the strap cells are word line strap cells.

Non-volatile memory system using strap cells in source line pull down circuits

A method of forming a semiconductor device by recessing the upper surface of a semiconductor substrate in first and second areas but not a third area, forming a first conductive layer in the first and second areas, forming a second conductive layer in all three areas, removing the first and second conductive layers from the second area and portions thereof from the first area resulting in pairs of stack structures each with a control gate over a floating gate, forming a third conductive layer in the first and second areas, forming a protective layer in the first and second areas and then removing the second conductive layer from the third area, then forming blocks of conductive material in the third area, then etching in the first and second areas to form select and HV gates, and replacing the blocks of conductive material with blocks of metal material.

Method of making memory cells, high voltage devices and logic devices on a substrate

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Sunnyvale, CA, United States of America

Xian Liu