Momentive Performance Materials Gmbh

West Virginia University

Soraa, Inc.

Slt Technologies, Inc.

Xian-An Cao

Mark Philip D'Evelyn

Dong-Sil Park

Kristi Jean Narang

Huicong Hong

Larry Qiang Zeng

Steven Francis LeBoeuf

Anping Zhang

A method for growing a crystalline composition, the first crystalline composition may include gallium and nitrogen. The crystalline composition may have an infrared absorption peak at about 3175 cm, with an absorbance per unit thickness of greater than about 0.01 cm. In one embodiment, the composition ay have an amount of oxygen present in a concentration of less than about 3&#xd7;10per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the first crystalline composition.

Method of forming a GaN single crystal comprising disposing a nucleation center in a first region, a GaN source material in a second region, and establishing a temperature distribution

A method for growing a crystalline composition, the first crystalline composition may include gallium and nitrogen. The crystalline composition may have an infrared absorption peak at about 3175 cm, with an absorbance per unit thickness of greater than about 0.01 cm. In one embodiment, the composition may have an amount of oxygen present in a concentration of less than about 3&#xd7;10per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the first crystalline composition.

Crystalline gallium nitride containing flourine

Method of making a gallium nitride crystalline composition having a low dislocation density

A sensing device is used to detect the spatial distributions of stresses applied by physical contact with the surface of the sensor or induced by pressure, temperature gradients, and surface absorption. The sensor comprises a hybrid active layer that includes luminophores doped in a polymeric or organic host, altogether embedded in a matrix. Under an electrical bias, the sensor simultaneously converts stresses into electrical and optical signals. Among many applications, the device may be used for tactile sensing and biometric imaging.

High sensitivity stress sensor based on hybrid materials

A method is disclosed for elevating the work function of conductive layers such as indium tin oxide by chlorine-containing plasma exposure or etching. Also disclosed are electronic devices such as organic light-emitting diodes and organic photovoltaic cells with a chlorine plasma-treated conductive layer as the hole-injecting or hole-accepting electrode. The performance of the devices is enhanced due to an increased work function of the plasma-treated electrode.

Plasma-chlorinated electrode and organic electronic devices using the same

A method may produce a resonant cavity light emitting device. A seed gallium nitride crystal and a source material in a nitrogen-containing superheated fluid may provide a medium for mass transport of gallium nitride precursors therebetween. A seed crystal surface may be prepared by applying a first thermal profile between the seed gallium nitride crystal and the source material. Gallium nitride material may be grown on the prepared surface of the seed gallium nitride crystal by applying a second thermal profile between the seed gallium nitride crystal and the source material while the seed gallium nitride crystal and the source material are in the nitrogen-containing superheated fluid. A stack of group III-nitride layers may be deposited on the single-crystal gallium nitride substrate. The stack may include a first mirror sub-stack and an active region adaptable for fabrication into one or more resonant cavity light emitting devices.

Growing community of inventors

Morgantown, WV, United States of America

Xian-An Cao