Samsung Electronics Co., Ltd.

Xia Zhiliang

Young-Gu Kim

Daesin Kim

Etienne Nowak

Narae Jeong

A semiconductor memory device includes a semiconductor substrate including a common source region and a drain region, a lower structure provided on the semiconductor substrate and including a plurality of lower transistors connected in series between the common source region and the drain region, a stack including a plurality of word lines stacked on the lower structure, and semiconductor pillars penetrating the stack and controlling gate electrodes of respective ones of the lower transistors.

Growing community of inventors

Hwaseong-si, South Korea

Xia Zhiliang