Hewlett-packard Development Company, L.P.

Hewlett Packard Enterprise Development LP

Xia Sheng

Gary A Gibson

Richard H Henze

Huei-Pei Kuo

Zhang-Lin Zhou

Steven Louis Naberhuis

Si-Ty Lam

Dick Henze

Hou Tee Ng

Henryk Birecki

Krzysztof Nauka

Patricia A Beck

Nobuyoshi Koshida

Jianhua Yang

Yoocharn Jeon

Hans S Cho

Suhas Kumar

Amit S Sharma

Chung Ching Yang

Laurence Hubby

Sam Burriesci

A memristor device includes a first electrode, a second electrode, and a memristor layer disposed between the first electrode and the second electrode. The memristor layer is formed of a metal oxide. The memristor layer includes a plurality of regions that extend between the first electrode and the second electrode. The plurality of regions of the memristor layer are created with different concentrations of oxygen before electrical operation, and, during electrical operation, a voltage-conductance characteristic of the memristor device is controlled based on the different concentrations of oxygen of the plurality of regions. The controlling of the voltage-conductance characteristic includes increasing or decreasing the conductance of the memristor device toward a target conductance at a specific voltage.

Symmetric bipolar switching in memristors for artificial intelligence hardware

A resistive memory device includes a bottom electrode and a top electrode sandwiching a switching layer. The device also includes a field enhancement (FE) feature that extends from the bottom electrode either into the switching layer or is covered by switching layer and that is to enhance an electric field generated by the two electrodes to thereby confine a switching area of the device at the FE feature. The device further includes a planar interlayer dielectric surrounding the device, for supporting the top electrode. A method of making a resistive memory device, employing in-situ vacuum deposition of all layers, is also provided.

Resistive memory device having field enhanced features

A resistive memory device includes a conductor and a resistive memory stack in contact with the conductor. The resistive memory stack includes a multi-component electrode and a switching region. The multi-component electrode includes a base electrode having a surface, and an inert material electrode on the base electrode surface in a form of i) a thin layer, or ii) discontinuous nano-islands. A switching region is in contact with the conductor and with the inert material electrode when the inert material electrode is in the form of the thin layer; or the switching region is in contact with the conductor, with the inert material electrode, and with an oxidized portion of the base electrode when the inert material electrode is in the form of the discontinuous nano-islands.

Resistive memory devices with a multi-component electrode

A reflective color display has at least a color pixel disposed to receive ambient light for front lighting and has a light source optically coupled to the color pixel to provide back light for backlighting. The color pixel has a first sub-pixel and a second sub-pixel. The first sub-pixel has a first luminescent layer with a luminescent material for converting a portion of the ambient light spectrum into light of a first color. An unpatterned mirror is disposed under the luminescent layer of the first sub-pixel and extends through the first and second sub-pixels. The unpatterned mirror reflects at least light of the first color while transmitting the back light to the first luminescent layer for conversion by the first luminescent material into light of the first color.

Reflective color display with luminescence and backlighting

A reflective color display pixel has a top surface for receiving ambient light, and a plurality of sub-pixels including a first sub-pixel and a second sub-pixel. The first sub-pixel has a luminescent layer for absorbing a portion of the ambient light and emitting light of a first color. The second sub-pixel has a color tunable reflector for reflecting the ambient light in a selected band.

Reflective color display pixel

An assembly corresponding to a pixel includes sub-assemblies that each correspond to a sub-pixel of the pixel. At least one of the sub-assemblies includes a luminescent fluid, black particles and a mirror. The luminescent fluid converts wavelengths of light less than a conversion wavelength of the sub-assembly to the conversion wavelength. The black particles are positionable within luminescent fluid in accordance with a color to be displayed by the assembly. The mirror is disposed at a bottom end of the sub-assembly.

Luminescent pixel assembly

A display includes at least two stacked waveguides () and (). A first waveguide () contains first luminophores that fluoresce to produce light of a first color. A second waveguide () overlying the first waveguide and contains second luminophores that fluoresce to produce light of a second color. A light collection structure () transmits light from a surrounding environment transversely through the first and second waveguides () and optical vias () provide optical paths out of the display for light respectively from the first optical waveguide () and the second optical waveguide ().

Luminescent stacked waveguide display

Disclosed herein are various embodiments related to luminescence-based reflective display pixels. In one embodiment, among others, a luminescent-based pixel includes a luminescent layer including luminophores distributed in a matrix. The luminescent layer is configured to receive light from an ambient environment through a first side of the luminescent layer and has an index of refraction that is higher than an index of refraction of the ambient environment. The luminescent-based pixel includes a mirror disposed on a second side of the luminescent layer that is opposite the first side of the luminescent layer. The luminescent-based pixel also includes a diffusive surface to randomize the direction of incident light.

Luminescence-based reflective pixel

A memristor structure has two electrodes sandwiching an insulating region, and includes a nanoparticle providing a conducting path between the two electrodes, wherein either the insulating region comprises an inorganic material and nanoparticle comprises a solid nanoparticle or a core/shell nanoparticle or the insulating region comprises an inorganic or organic material and the nanoparticle comprises a core/shell nanoparticle.

Nanoparticle-based memristor structure

A display element comprises a reservoir and a channel connected to the reservoir. The channel extends across an area including a visible area of the display element, and the reservoir is substantially outside the visible area. The display element further comprises at least one electrode and a luminescent fluid in the reservoir and movable, by means of signals applied to the at least one electrode, between a first position and a second position. In the first position, the luminescent fluid is substantially contained in the reservoir outside the visible area and in the second position, the luminescent fluid extends along the channel to occupy the visible area. The luminescent fluid absorbs light in a first color waveband and converts the absorbed light to light in a second color waveband different from the first color waveband.

Reflective display

A reflective color display pixel has a top surface for receiving ambient light, and a plurality of sub-pixels including a first sub-pixel. The first sub-pixel has a broadband mirror and a luminescent layer disposed over the broadband mirror. The luminescent layer contains a luminescent material for absorbing a portion of the ambient light and emitting light of a first color, and a light-absorbing material for absorbing light of wavelengths longer than a wavelength of the first color.

Reflective display utilizing luminescence

A display element comprises a cell containing a fluid including a plurality of wells at the bottom of the cell. A luminescent material is within the cell for modulating light incident from the top of the cell and for returning luminescent light; and a dispersion of particles is contained within the fluid. The dispersion of particles is movable between a first state in which the particles are substantially contained within the plurality of wells and a second state in which the particles are distributed between the top and bottom of the cell, to control the intensity of luminescent light returned by the display element.

Luminescent materials include a plurality of nanocrystals. At least some of the nanocrystals may be configured to emit electromagnetic radiation upon stimulation, and the plurality of nanocrystals may exhibit a multi-modal energy level distribution. The distribution of the nanocrystals may be selectively configured to enhance the luminescence efficiency of a fraction of the plurality of nanocrystals that exhibits one energy level mode of the multi-modal energy level distribution. Light-emitting diodes and electronic devices include such luminescent materials.

Luminescent materials having nanocrystals exhibiting multi-modal energy level distributions

A method for making a photoconductor for electrophotography can comprise depositing a charge generating layer on an electrode; depositing a charge transfer layer on the charge generating layer, where a plurality of charge transfer molecules are disposed within the charge transfer layer; depositing a film of non-conducting material onto the surface of the charge-transfer layer; heating the film and the surface to cause a subset of the charge transfer molecules to move into the non-conducting material, creating in the film a conducting sub-layer and an insulating sub-layer, where the insulating sub-layer is substantially free of charge transfer molecules.

Photoconductor for electrophotography

Photoconductor structure processing methods and imaging device photoconductor structures are described. According to one embodiment, a photoconductor structure processing method includes processing a photoconductor structure of an imaging device and wherein the photoconductor structure comprises charge transport material configured to conduct electrical charges generated responsive to reception of light to form a latent image during an electro-photographic imaging process, the processing comprising removing at least some of the charge transport material from at least a portion of the photoconductor structure. The photoconductor structure may also be further treated to reduce the migration of charge transport material. Additional embodiments are described in the disclosure.

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Palo Alto, CA, United States of America

Xia Sheng