Sionyx, Inc.

Xia Li

James Edward Carey

Nathaniel McCaffrey

Christopher J Vineis

Neal T Kurfiss

Optoelectronic devices, materials, and associated methods having increased operating performance are provided. In one aspect, for example, an optoelectronic device can include a semiconductor material, a first doped region in the semiconductor material, a second doped region in the semiconductor material forming a junction with the first doped region, and a laser processed region associated with the junction. The laser processed region is positioned to interact with electromagnetic radiation. Additionally, at least a portion of a region of laser damage from the laser processed region has been removed such that the optoelectronic device has an open circuit voltage of from about 500 mV to about 800 mV.

Semiconductor devices having reduced substrate damage and associated methods

The present invention relates generally to methods for high throughput and controllable creation of high performance semiconductor substrates for use in devices such as high sensitivity photodetectors, imaging arrays, high efficiency solar cells and the like, to semiconductor substrates prepared according to the methods, and to an apparatus for performing the methods of the invention.

High sensitivity photodetectors, imaging arrays, and high efficiency photovoltaic devices produced using ion implantation and femtosecond laser irradiation

The present disclosure provides systems and methods for configuring and constructing a single photo detector or array of photo detectors with all fabrications circuitry on a single side of the device. Both the anode and the cathode contacts of the diode are placed on a single side, while a layer of laser treated semiconductor is placed on the opposite side for enhanced cost-effectiveness, photon detection, and fill factor.

Growing community of inventors

Beverly, MA, United States of America

Xia Li