Headway Technologies, Incorporated

Applied Spintronics, Inc.

Applied Spintronill, Inc.

Applied Spintronics Technology, Inc.

Xi Zeng Shi

Po-Kang Wang

Hsu Kai Yang

Bruce Yee Yang

Yimin Guo

Tai Min

Pokang Wang

Magnetic Random Access Memory (MRAM) can be programmed and read as fast as Static Random Access Memory (SRAM) and has the non-volatile characteristics of electrically eraseable programmable read only memory (EEPROM), FLASH EEPROM or one-time-programmable (OTP) EPROM. Due to the randomness of manufacturing process, the magnetic tunnel junctions (MTJ) in MRAM cells will require different row and column current combinations to program and not to disturb the other cells. Based on adaptive current sources for programming, this disclosure teaches methods, designs, test algorithms and manufacturing flows for generating EEPROM, FLASH EEPROM or OTP EPROM like memories from MRAM.

Adaptive algorithm for MRAM manufacturing

An MTJ element is formed between orthogonal word and bit lines. The bit line is a composite line which includes a high conductivity layer and a soft magnetic layer under the high conductivity layer. During operation, the soft magnetic layer concentrates the magnetic field of the current and, due to its proximity to the free layer, it magnetically couples with the free layer in the MTJ. This coupling provides thermal stability to the free layer magnetization and ease of switching and the coupling may be further enhanced by inducing a shape or crystalline anisotropy into the free layer during formation.

Magnetic random access memory array with coupled soft adjacent magnetic layer

Growing community of inventors

Fremont, CA, United States of America

Xi Zeng Shi