Wuhan Research Institute of Posts and Telecommunications

Xi Xiao

Lei Wang

Miaofeng Li

Daigao Chen

Ying Qiu

Shaohua Yu

Qi Yang

Lei Liu

A polarization converter based on taking a high-order TE mode as a transition mode comprises a ridge waveguide () and a slab waveguide () that are arranged in double layers and varying in width, and a strip waveguide () which is varying in width. The ridge waveguide () is disposed on the upper end face of the slab waveguide (), and is aligned with two ends of the slab waveguide (). The right end of the ridge waveguide () and the slab waveguide () are connected with the strip waveguide () with the varying width. A TMmode enters from the left ends of the ridge waveguide and the slab waveguide, and is converted into a TEmode for output. On the contrary, the TEmode enters from the right end of the strip waveguide and is converted into the TMmode for output.

Polarization converter based on taking high-order TE mode as transition mode

An on-chip mode converter-based silicon-germanium photoelectric detection apparatus comprises an insulating substrate, an optical coupler, an on-chip mode converter and a multi-mode silicon-germanium photoelectric detector. The optical coupler, the converter and the photoelectric detector are sequentially connected and all fixed on silicon wafers of the insulating substrate. An incident fundamental mode optical signal is transmitted to the optical coupler through a single-mode fiber, enters the converter via the optical coupled. The converter converts the fundamental mode optical signal into a multi-mode optical field and enters the photoelectric detector, which converts the multi-mode optical field into an electrical signal. Heavily germanium-doped region are located in areas with relatively weak distributed light intensity of the multi-mode optical field. The absorption loss of the heavily germanium-doped region and third through-holes on the optical field is dramatically reduced and the responsiveness of the apparatus can be improved effectively.

Silicon-germanium photoelectric detection apparatus based on on-chip mode converter

A broadband polarization beam splitter/combiner based on a gradient waveguide directional coupler, comprises a gradient waveguide directional coupler, a beam combining end (), a curved waveguide (), a TE mode end () and a TM mode end (). The coupler consists of a straight end gradient waveguide () and a serial end gradient waveguide (). The trend of change of the gradient waveguide () is opposite to the gradient waveguide (), and a gap is provided between the gradient waveguide () and the gradient waveguide (). The beam combining end () is connected with one end of the gradient waveguide (), the other end of the gradient waveguide () is connected with one end of the curved waveguide (), the other end of the curved waveguide () is connected with the TE end (), and the waveguide () is connected with the TM end ().

Broadband polarization beam splitter/combiner based on gradient waveguide directional coupler

The present invention discloses a GSG track-type radio-frequency electrode, a silicon-based traveling-wave electrode light modulator, and a preparation method, and relates to the field of high-speed electro-optical chips. The GSG track-type radio-frequency electrode includes a GSG-type planar electrode, where a track electrode used for delaying an electric field is periodically added to one side or dual sides of the GSG-type planar electrode, and the track electrode is connected to a ground electrode of the GSG-type planar electrode. The silicon-based traveling-wave electrode light modulator includes the GSG track-type radio-frequency electrode and a conventional silicon-based traveling-wave electrode light modulator, and the GSG track-type radio-frequency electrode is connected to an active region of the silicon-based traveling-wave electrode light modulator by using through holes between electrode layers. The present invention can improve parameter design freedom of an electrode and realize effective signal parameter matching.

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Hubei, China

Xi Xiao