Newsouth Innovations Pty Limited

Xi Wang

Stuart Ross Wenham

Jing Ji

Alison Maree Wenham

Alison Joan Lennon

Valantis Vais

Jie Cui

Jingnan Tong

The present disclosure provides a method of anodizing a surface of a semiconductor device comprising a p-n junction. The method comprises exposing a first surface portion of the semiconductor device to an electrolytic solution that is suitable for anodizing the first surface portion when an electrical current is directed through a region at the first surface portion. Further, the method comprises exposing a portion of the semiconductor device to electromagnetic radiation in a manner such that the electromagnetic radiation induces the electrical current and the first surface portion anodizes.

Method of anodising a surface of a semiconductor device

A method of forming an oxide layer on an exposed surface of a semiconductor device which contains a p-n junction is disclosed, the method comprising: immersing the exposed surface of the semiconductor device in an electrolyte; producing an electric field in the semiconductor device such that the p-n junction is forward-biased and the exposed surface is anodic; and electrochemically oxidizing the exposed surface to form an oxide layer.

Passivation scheme for solar cells

Growing community of inventors

Kingsford, Australia

Xi Wang