Chinese Academy of Sciences

Acm Research (shanghai) Inc.

Acm Research, Inc.

Shanghai Simgui Technology Co., Ltd.

Shanghai Neusoft Medical Technology Co., Ltd.

Semiconductor Manufacturing International (shanghai) Corporation

Volvo Car Corporation

Lincoln Global, Inc.

Semiconductor Manufacturing International (beijing) Corporation

Shenyang Neusoft Medical Systems Co., Ltd.

Xi Wang

Fuping Chen

Hui Wang

Jing Lan Chen

Xiaoyan Zhang

Jian Wang

Xuejun Li

Miao Zhang

Jun Wang

Zhaowei Jia

Fufa Chen

Yinuo Jin

Deyuan Xiao

Liangzhi Xie

Xiaolu Huang

Jiexin Luo

Qingqing Wu

Zhongying Xue

Shena Jia

Xing Wei

Jun Wu

Jian Zhao

Guodong Liang

Baowei Xu

Kai Huang

Meng Chen

Xin Ou

Cheng Cheng

Yongwei Chang

Guoxing Chen

Danying Wang

Chaowei Jiang

Yingwei Dai

Lu Fei

Zhan Chai

Bo Zhang

Yue Ma

Zengfeng Di

Guocheng Wu

Tiangui You

Qi Jia

Xinying Li

Zhenming Chu

Xiaohu Zheng

Chenglu Lin

Xiaofeng Tao

Gang Wang

Fei Ye

Yunwen Huang

Xiang Wang

Jianhua Zhou

Voha Nuch

David Hui Wang

Nan Li

Xinhong Cheng

Steven E McQuerry

Chuan He

Zhi Zhou

Chenchen Wang

Gongbai Cao

Shibin Zhang

Pengcheng Zheng

Wenhui Xu

Jin Feng Gao

Zhong Xue

Zhenxu Pang

Haibo Liang

Changzheng Shao

Jen Hao Cheng

Zhongdang Wang

Pengfei Jia

Welder enclosure

A method for cleaning substrates includes rotating a substrate; delivering deionized water on a surface of the substrate for pre wetting the surface of the substrate; delivering chemical solution with high temperature on the surface of the substrate for cleaning the surface of the substrate; changing the rotation speed of the substrate to a low rotation speed, and moving a ultra/mega sonic device. The method further includes turning on the ultra/mega sonic device and supplying a constant or pulse working power in a first cleaning cycle; turning off the ultra/mega sonic device, and delivering a high temperature chemical solution or deionized water. The method further includes turning on the ultra/mega sonic device and supplying a constant or pulse working power in a second cleaning cycle; turning off the ultra/mega sonic device, and delivering rinse chemical solution or deionized water on the surface of the substrate; and drying the substrate.

Method and apparatus for cleaning substrates using high temperature chemicals and ultrasonic device

A power battery heating system of an electric vehicle including: a heating module configured to heat the power battery of the electric vehicle; a solar sunroof; and a sunroof control unit configured to control the operation of the heating module and the electric energy output of the solar sunroof; wherein the heating system is configured to start a power battery heating operation based on the solar sunroof when the power battery is not in a high voltage output state and the temperature of the power battery is lower than a temperature threshold, the power battery heating operation including: controlling the solar sunroof to output electric energy to the heating module such that the heating module performs the heating of the power battery using the electric energy from the solar sunroof.

Power battery heating system and method using solar sunroof energy

A method for cleaning semiconductor substrate without damaging patterned structure on the semiconductor substrate using ultra/mega sonic device comprises applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency fand power Pto drive the ultra/mega sonic device; before bubble cavitation in the liquid damaging patterned structure on the substrate, setting the ultra/mega sonic power supply at zero output; after temperature inside bubble cooling down to a set temperature, setting the ultra/mega sonic power supply at frequency fand power Pagain; detecting power on time at power P1 and frequency f1 and power off time separately or detecting amplitude of each waveform output by the ultra/mega sonic power supply; comparing the detected power on time with a preset time τ, or comparing the detected power off time with a preset time τ, or comparing detected amplitude of each waveform with a preset value, if the detected power on time is longer than the preset time τ, or the detected power off time is shorter than the preset time τ, or the detected amplitude of any waveform is larger than the preset value, shut down the ultra/mega sonic power supply and send out an alarm signal.

Methods and apparatus for cleaning semiconductor wafers

The present invention provides a method for preparing a gallium oxide semiconductor structure and a gallium oxide semiconductor structure obtained thereby. The method comprises: providing a gallium oxide single-crystal wafer () having an implantation surface (a) (S); performing an ion implantation from the implantation surface (a) into the gallium oxide single-crystal wafer (), such that implanted ions reach a preset depth and an implantation defect layer () is formed at the preset depth (S); bonding the implantation surface (a) to a high thermal conductivity substrate () to obtain a first composite structure (S); performing an annealing treatment on the first composite structure such that the gallium oxide single-crystal wafer () in the first composite structure is peeled off along the implantation defect layer (), thereby obtaining a second composite structure and a third composite structure (S); and performing a surface treatment on the second composite structure to remove a first damaged layer (), so as to obtain a gallium oxide semiconductor structure comprising a first gallium oxide layer () and the high thermal conductivity substrate () (S). In the gallium oxide semiconductor structure formed using the above method, the first gallium oxide layer () is integrated with the high thermal conductivity substrate () to effectively improve the thermal conductivity of the first gallium oxide layer ().

Gallium oxide semiconductor structure and preparation method therefor

A method for cleaning semiconductor wafer includes putting at least one wafer on a cassette bracket in a first cleaning tank filled with chemical solution; after said wafers have been processed in the first cleaning tank, transferring the wafers from the first cleaning tank to a second cleaning tank with the wafers immersing in the chemical solution; and after said wafers have been processed in the second cleaning tank, taking the wafers out of the second cleaning tank.

Method and apparatus for cleaning semiconductor wafer

The present invention provides a high temperature chemical solution supply system for cleaning substrates. The system includes a solution tank, a buffer tank, a first pump and a second pump. The solution tank contains high temperature chemical solution. The buffer tank has a tank body, a vent line and a needle valve. The tank body contains the high temperature chemical solution. An end of the vent line connects to the tank body, and the other end of the vent line connects to the solution tank. The needle valve is mounted on the vent line, wherein the needle valve is adjusted to reach a flow rate to vent gas bubbles inside of the high temperature chemical solution out of the buffer tank through the vent line. An inlet of the first pump connects to the solution tank, and an outlet of the first pump connects to the buffer tank. An inlet of the second pump connects to the buffer tank, and an outlet of the second pump connects to a cleaning chamber in which a substrate is cleaned. The present invention also provides an apparatus including the high temperature chemical solution supply system and an ultra or mega sonic device for cleaning the substrate. The present invention also provides methods for cleaning the substrates.

The present invention provides a method for cleaning substrates comprising the steps of: placing a substrate on a substrate holder; implementing a bubble less or bubble-free pre-wetting process for the substrate; and implementing an ultra/mega sonic cleaning process for cleaning the substrate.

Method and apparatus for cleaning substrates

A system for controlling damages in cleaning a semiconductor wafer comprising features of patterned structures, the system comprising: a wafer holder for temporary restraining a semiconductor wafer during a cleaning process; an inlet for delivering a cleaning liquid over a surface of the semiconductor wafer; a sonic generator configured to alternately operate at a first frequency and a first power level for a first predetermined period of time and at a second frequency and a second power level for a second predetermined period of time, to impart sonic energy to the cleaning liquid, the first predetermined period of time and the second predetermined period of time consecutively following one another; and a controller programmed to provide the cleaning parameters, wherein at least one of the cleaning parameters is determined such that a percentage of damaged features as a result of the imparting sonic energy is lower than a predetermined threshold.

System for cleaning semiconductor wafers

The present invention discloses a method for cleaning substrate without damaging patterned structure on the substrate using ultra/mega sonic device, comprising: applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency fand power Pto drive said ultra/mega sonic device; after micro jet generated by bubble implosion and before said micro jet generated by bubble implosion damaging patterned structure on the substrate, setting said ultra/mega sonic power supply at frequency fand power Pto drive said ultra/mega sonic device; after temperature inside bubble cooling down to a set temperature, setting said ultra/mega sonic power supply at frequency fand power Pagain; repeating above steps till the substrate being cleaned.

Methods and apparatus for cleaning substrates

A method for controlling damages in cleaning a semiconductor wafer comprising features of patterned structures, the method comprising: delivering a cleaning liquid over a surface of a semiconductor wafer during a cleaning process; and imparting sonic energy to the cleaning liquid from a sonic transducer during the cleaning process, wherein power is alternately supplied to the sonic transducer at a first frequency and a first power level for a first predetermined period of time and at a second frequency and a second power level for a second predetermined period of time, the first predetermined period of time and the second predetermined period of time consecutively following one another, wherein at least one of the cleaning parameters is determined such that a percentage of damaged features as a result of the imparting sonic energy is lower than a predetermined threshold.

Method for cleaning semiconductor wafers

A method for effectively cleaning vias (), trenches () or recessed areas on a substrate () using an ultra/mega sonic device (), comprising: applying liquid () into a space between a substrate () and an ultra/mega sonic device (); setting an ultra/mega sonic power supply at frequency fand power Pto drive said ultra/mega sonic device (); after the ratio of total bubbles volume to volume inside vias (), trenches () or recessed areas on the substrate () increasing to a first set value, setting said ultra/mega sonic power supply at frequency fand power Pto drive said ultra/mega sonic device (); after the ratio of total bubbles volume to volume inside the vias (), trenches () or recessed areas reducing to a second set value, setting said ultra/mega sonic power supply at frequency fand power Pagain; repeating above steps till the substrate () being cleaned.

The present invention relates to applying at least one ultra/mega sonic device and its reflection plate for forming standing wave in a metallization apparatus to achieve highly uniform metallic film deposition at a rate far greater than conventional film growth rate in electrolyte. In the present invention, the substrate is dynamically controlled so that the position of the substrate passing through the entire acoustic field with different power intensity in each motion cycle. This method guarantees each location of the substrate to receive the same amount of total sonic energy dose over the interval of the process time, and to accumulatively grow a uniform deposition thickness at a rapid rate.

Method and apparatus for uniformly metallization on substrate

An apparatus and a method for wet process on a semiconductor substrate are provided. The apparatus includes a process chamber (), a chuck () for holding and positioning a semiconductor substrate () disposed in the process chamber, a rotating driving mechanism () driving the chuck to rotate, a chamber shroud () disposed surrounding the process chamber, at least one vertical driving mechanism driving the chamber shroud to move up or down, a shielding cover (), at least one driving device () driving the shielding cover to cover down or lift up, at least one dispenser module () having a dispenser () for spraying liquid to the surface of the semiconductor substrate. When the shielding cover covers above the process chamber, the chamber shroud is moved up to couple with the shielding cover, so as to seal the process chamber for preventing the liquid from splashing out of the process chamber.

Apparatus and method for wet process on semiconductor substrate

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Shanghai, China

Xi Wang