University of Electronic Science and Technology of China

Chengdu Sintanovo Biotechnology Co., Ltd.

Qitan Technology Ltd., Chengdu

Xi Hu

Bo Zhang

Ming Qiao

Guoqing Zhong

Zhaoji Li

Jian Gao

Jin Wang

Jun Ye

Yu Yuan

Hai Hu

Haibo Zhou

Xiaoping Fu

Sijun Li

Yuanbo Li

Bo Luo

Qiang E

This application provides a current measurement circuit including: an amplification unit, configured to amplify an electrical signal from the sensor unit; a comparison unit, configured to obtain an initial pulse signal based on a voltage signal output by the amplification unit and a preset voltage; a delay unit, electrically connected to the comparison unit and configured to delay an output of the initial pulse signal to obtain a target pulse signal; a resistance unit, wherein two terminals of the resistance unit are electrically connected to an input terminal of the amplification unit and an output terminal of the delay unit respectively, and the resistance unit is configured to charge and discharge the amplification unit based on the target pulse signal; and a calculation unit, electrically connected to the delay unit and configured to calculate a target current based on the target pulse signal output by the delay unit.

Current measurement circuit, current measurement method and nanopore sequencing device

The present invention discloses a polypeptide compound, a pharmaceutical composition, and a preparation method and use thereof. The structural formula of the polypeptide compound is shown in general formula (I):  Such polypeptide compounds as &#x3ba;-opioid receptor agonists have the advantages of better activity and the potential to become clinical candidate compounds.

Polypeptide compound, pharmaceutical composition, preparation method and application thereof

SOI devices for plasma display panel driver chip, include a substrate, a buried oxide layer and an n-type SOI layer in a bottom-up order, where the SOI layer is integrated with an HV-NMOS device, an HV-PMOS device, a Field-PMOS device, an LIGBT device, a CMOS device, an NPN device, a PNP device and an HV-PNP device; the SOI layer includes an n+ doped region within the SOI layer at an interface between the n-type SOI layer and the buried oxide layer; and the n+ doped region has a higher doping concentration than the n-type SOI layer.

SOI devices for plasma display panel driver chip

Growing community of inventors

Sichuan, China

Xi Hu