Tcl China Star Optoelectronics Technology Co., Ltd.

Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.

Xi Cheng

Gang Yu

Xin Hui Zhang

Linlin Fu

Yongyuan Qiu

The present application discloses a display panel. The display panel includes a plurality of light emitting devices distributed in an array, wherein each light-emitting device includes an upper light emitting surface and a side light emitting surface configured to transmit light, and wherein the side light emitting surface is provided with a reflective layer; a plurality of light emitting devices includes a plurality of light emitting devices with different colors, and the reflective layer on the light emitting device with one color is configured to reflect light emitted by the color light emitting devices with another colors.

Display panel

The present application discloses a thin-film transistor, a display panel, and an electronic device. The thin-film transistor includes a gate, a gate insulating layer, and a semiconductor layer sequentially disposed from an inside to an outside along a radial direction. The thin-film transistor further includes a source and a drain disposed on a side of the semiconductor layer and arranged at intervals, and the source and the drain are connected to the semiconductor layer.

Thin-film transistor, display panel, and electronic device

A driver substrate and a display panel are disclosed. The driver substrate includes a base substrate and a flexible circuit board. The base substrate has a first bonding portion. The flexible circuit board is disposed on a bonding surface of the first bonding portion and bends from the bonding surface to a side of the first bonding portion away from the bonding surface. The flexible circuit board includes a bent portion, an anti-scratch structure is disposed between the bent portion and the first bonding portion, and the bent portion is attached to the anti-scratch structure.

Driver substrate and display panel

The application discloses a thin film transistor and a light-emitting diode (LED) backplane. The thin film transistor includes: a first gate, a first insulating layer, a first source, a semiconductor layer, a first drain, a second insulating layer, and a second gate; the first insulating layer covers the first gate; the first source, the semiconductor layer, and the first drain are all disposed at a side of the first insulating layer away from the first gate; the second insulating layer covers the first drain, the semiconductor layer, and the first source; and the second gate is disposed on a surface of a side of the second insulating layer away from the first gate, wherein the first source, the semiconductor layer, and the first drain jointly constitute a vertical channel structure.

Thin film transistor and light-emitting diode backplane

A splicing type light board and a display device are provided with a first LED light board and a second LED light board; a first end of the first LED light board near a first signal input terminal, and a second end away from the first signal input terminal; a first end of the second LED light board near a second signal input terminal, and a second end away from the second signal input terminal; and the first end of the first LED light board connecting the first end of the second LED light board or the second end of the first LED light board connecting the second end of the second LED light board.

Splicing type light board and display device

A backlight source and a manufacturing method thereof are provided. The backlight source includes a first substrate, a plurality of light sources, a driving circuit layer, and a conductive line. The light sources are distributed on an upper surface of the first substrate. The second substrate is disposed opposite to the first substrate. The driving circuit layer is disposed on a surface of a side of the second substrate away from the first substrate. An end of the conductive line is connected to one of the light sources, and another end of the conductive line is bonded to the driving circuit layer.

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Shenzhen, China

Xi Cheng